Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Chuan-Ping Hou"'
Autor:
Chuan-Ping Hou, 侯全評
88
Shrinking the dimensions of devices beyond 0.25 mm or less to increase packing density impose greater demands on the planarization process. Among the newly developed planarization technologies for Ultra Large Scale Integration (ULSI) metalliz
Shrinking the dimensions of devices beyond 0.25 mm or less to increase packing density impose greater demands on the planarization process. Among the newly developed planarization technologies for Ultra Large Scale Integration (ULSI) metalliz
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/97253054309402730969
Autor:
Jing-Cheng Lin, Hon-Jarn Lin, R. Chen, Hsien-Chin Lin, Ming-Fang Wang, D. H. Chen, S.S. Lin, F. C. Yang, Huan-Neng Chen, S. M. Jang, Jonathan Chang, Kevin Huang, L. Yuan, Ming-Huan Tsai, B. R. Yang, C. C. Yeh, Tze-Liang Lee, S. L. Shue, C. H. Wang, W. Chang, K. F. Yu, C. O. Chui, Yung-Chow Peng, Y. Ku, Chuan-Ping Hou, Yung-Hsien Wu, Jyh-Cherng Sheu, Cheng Yun-Wei, Jun He, Po-Kang Wang, Y. K. Leung, C. P. Chen, Derek Lin, Geoffrey Yeap, Q. Fu, Y. C. Huang, Chun-Yen Chang, Kuang-Hsin Chen, X. Chen, Yung-Shun Chen, H. T. Yang, Ryan Lu, Chung-Kai Lin, S. H. Sun, T. S. Chang, H. T. Chiang, Chun-Kuang Chen, M. Cao, P. Hung, H. C. Lin, Jau-Yi Wu, F. L. Lai, B. Z. Tien, C. W. Wu, Yee-Chia Yeo, L. C. Lu, H. L. Shang, C. P. Lin, Wei-Heng Lin
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
A leading edge 5nm CMOS platform technology has been defined and optimized for mobile and HPC applications. This industry-leading 5nm technology features, for the first time, full-fledged EUV, and high mobility channel (HMC) finFETs with densest 0.02
Autor:
Hun-Jan Tao, H. C. Lin, Huan-Just Lin, Lee Chia-Fu, P.C. Yen, C.H. Huang, Yuan-Hung Chiu, W.S. Huang, C. C. Wu, King-Yuen Wong, Chun Chen, Stock Chang, Wang Shiang-Bau, Li-Shiun Chen, S.W. Chuang, Po-Kang Wang, Ming-Jie Huang, X.F. Yu, S.Y. Ku, Chien-Chao Huang, M.L. Cheng, Yung-Huei Lee, K. F. Yu, T.H. Li, C.M. Wu, Y. C. Peng, C.H. Tsai, Y.C. Lin, Tsz-Mei Kwok, Yi-Chun Huang, P.S. Lim, T.C. Gan, Tzong-Lin Wu, K.Y. Hsu, L.Y. Yang, S.S. Lin, L.W. Weng, T.H. Hsieh, F.K. Yang, C.T. Chan, Eric Ou-Yang, P.C. Hsieh, Derek Lin, S.B. Wang, Ming-Jer Chen, A. Keshavarzi, Chih-Yuan Lu, Chuan-Ping Hou, L.T. Lin, J.L. Yang, Yuh-Jier Mii, Chien-Chang Su, J.H. Chen, Hsieh Ching-Hua, Huan-Neng Chen, Y.W. Tseng, C. P. Lin, Chou Chun-Hao, A.S. Chang, Tseng Chien-Hsien, S.H. Liao, Tsung-Lin Lee, M. Cao
Publikováno v:
2010 International Electron Devices Meeting.
A high performance 22/20nm CMOS bulk FinFET achieves the best in-class N/P I on values of 1200/1100 µA/µm for I off =100nA/µm at 1V. Excellent device electrostatic control is demonstrated for gate length (L gate ) down to 20nm. Dual-Epitaxy and mu
Autor:
Jaw-Jung Shin, Fu-Jye Liang, Ming Lu, Li-Wei Kung, Fu-Liang Yang, Chien-Chao Huang, Hsun-Chih Tsao, Cheng-Kuo Wen, Jhon-Jhy Liaw, Ke-Wei Su, Yu-Jun Chou, Yi-Chun Huang, Yung-Shun Chen, Di-Hong Lee, Tze-Liang Lee, Shui-Ming Cheng, Samuel Fung, Chenming Hu, Bin-Chang Chang, Tang-Xuan Chung, Chuan-Ping Hou, Chang-Yun Chang, Tsai-Sheng Gau, Kuang-Hsin Chen, J.Y.-C. Sun, Cheng Chuan Huang, Hou-Yu Chen, Jan-Wen You, Liang Min-Chang, Jhi-cheng Lu, Chi-Chun Chen, Burn-Jeng Lin, Kuei-Shun Chen, Yee-Chia Yeo, Han-Jan Tao, J.H. Chen, Shih-Chang Chen, Hung-Wei Chen, Carlos H. Diaz, Yi-Ming Sheu, Chun-Kuang Chen, Bor-Wen Chan, Ying-Ho Chen, W. Chang, King-Chang Shu, C.H. Chen, Chii-Ming Wu, Cheng-hung Chang
Publikováno v:
Scopus-Elsevier
A 65 nm node strained SOI technology with high performance is demonstrated, providing drive currents of 1015 and 500 /spl mu/A//spl mu/m for N-FET and P-FET, respectively, at an off-state leakage of 40 nA//spl mu/m using 1 V operation. The technology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d2cd43133598ebbb8ca11a12eccb16a1
http://www.scopus.com/inward/record.url?eid=2-s2.0-17644444298&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-17644444298&partnerID=MN8TOARS