Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Chuan-Jie Hong"'
Autor:
Shi-Xian Guan, Tilo H. Yang, Chih-Hao Yang, Chuan-Jie Hong, Bor-Wei Liang, Kristan Bryan Simbulan, Jyun-Hong Chen, Chun-Jung Su, Kai-Shin Li, Yuan-Liang Zhong, Lain-Jong Li, Yann-Wen Lan
Publikováno v:
npj 2D Materials and Applications, Vol 7, Iss 1, Pp 1-8 (2023)
Abstract The performance enhancement of integrated circuits relying on dimension scaling (i.e., following Moore’s Law) is more and more challenging owing to the physical limit of Si materials. Monolithic three-dimensional (M3D) integration has been
Externí odkaz:
https://doaj.org/article/21909ef3fb1d41169b9cade8d1307404
Autor:
Chuan-Jie Hong, 洪川傑
106
With the advancement of modern science and technology, electronic products have become an indispensable existence in people''s lives. Each product consists of electronic circuits, processors, logic components, etc., and the base of these com
With the advancement of modern science and technology, electronic products have become an indispensable existence in people''s lives. Each product consists of electronic circuits, processors, logic components, etc., and the base of these com
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/f3n5h7
Autor:
Che Yu Lin, Kai Shin Li, Chuan Jie Hong, Yann Wen Lan, Kristan Bryan Simbulan, Yuan Liang Zhong, Yan-Kuin Su
Publikováno v:
Nanoscale Horizons. 5:163-170
In this work, we introduce a MoS2-based field effect transistor that can alternately operate either as a p-type or an n-type semiconductor in the same device. The proposed device is built with an adjustable threshold voltage (Vth), which can be varie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fd579fe429e4db5bdf6c8c52a3daf6f
https://doi.org/10.1039/c9nh00275h
https://doi.org/10.1039/c9nh00275h
Autor:
Yann-Wen, Lan, Chuan-Jie, Hong, Po-Chun, Chen, Yun-Yan, Lin, Chih-Hao, Yang, Chia-Jung, Chu, Ming-Yang, Li, Lain-Jong, Li, Chun-Jung, Su, Bo-Wei, Wu, Tuo-Hung, Hou, Kai-Shin, Li, Yuan-Liang, Zhong
Publikováno v:
Nanotechnology. 31(27)
A new flexible memory element is crucial for mobile and wearable electronics. A new concept for memory operation and innovative device structure with new materials is certainly required to address the bottleneck of memory applications now and in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::dbb11276c504f4b92b3001cbd16f7ecc
https://pubmed.ncbi.nlm.nih.gov/32208372
https://pubmed.ncbi.nlm.nih.gov/32208372
Autor:
Tuo-Hung Hou, Yann Wen Lan, Yun Yan Lin, Kai Shin Li, Yuan Liang Zhong, Chun Jung Su, Ming-Yang Li, Chuan Jie Hong, Chih Pin Lin, Lain-Jong Li, Chih Hao Yang, Po Chun Chen, Tung Yuan Yu
Publikováno v:
Nano Research. 12:303-308
Two-dimensional semiconductors, such as MoS2 are known to be highly susceptible to diverse molecular adsorbates on the surface during fabrication, which could adversely affect device performance. To ensure high device yield, uniformity and performanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c01af2a325806572d5b9fbef61e462e4
https://doi.org/10.1007/s12274-018-2215-5
https://doi.org/10.1007/s12274-018-2215-5
Autor:
Lain-Jong Li, Yann Wen Lan, Chih Hao Yang, Kai Shin Li, Bo Wei Wu, Po Chun Chen, Ming-Yang Li, Chun Jung Su, Tuo-Hung Hou, Yun Yan Lin, Yuan Liang Zhong, Chuan Jie Hong, Chia Jung Chu
Publikováno v:
Nanotechnology. 31:275204
A new flexible memory element is crucial for mobile and wearable electronics. A new concept for memory operation and innovative device structure with new materials is certainly required to address the bottleneck of memory applications now and in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d6b67a0c36bdf08ebf006c246721b37
https://doi.org/10.1088/1361-6528/ab82d7
https://doi.org/10.1088/1361-6528/ab82d7
Autor:
Che-Yu Lin, Kristan Bryan Simbulan, Chuan-Jie Hong, Kai-Shin Li, Yuan-Liang Zhong, Yan-Kuin Su, Yann-Wen Lan
Publikováno v:
Nanoscale Horizons; Jan2020, Vol. 5 Issue 1, p163-170, 8p