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pro vyhledávání: '"Chuan-Hui Gong"'
Publikováno v:
Journal of Sol-Gel Science and Technology. 82:627-634
The n-ZnO/p-NiO junctions have been fabricated by sol–gel method using Al as top electrodes and ITO as bottom electrodes for applications in resistive switching devices. Such devices exhibit homogenous and filamentary characteristics depending on t
Publikováno v:
RSC advances. 8(52)
We investigated the bipolar resistive switching (BRS) properties of Mn-doped NiO thin films by sol–gel spin-coating. As the Mn doping concentration increased, lattice constant, grain size and band gap were found to decrease simultaneously. Moreover