Zobrazeno 1 - 10
of 490
pro vyhledávání: '"Chuan Seng Tan"'
Publikováno v:
IEEE Photonics Journal, Vol 16, Iss 5, Pp 1-9 (2024)
In this study, a simplified transformer model is used to predict the beam waist of 1,092 nm light coupled out from SiN-based mixed pitch gratings at various heights. The beam waists data at various heights above the grating is first compiled. Then, w
Externí odkaz:
https://doaj.org/article/44cdfdddd6c54e28b81f34026d82d3b2
Autor:
Song Han, Jieyuan Cui, Yunda Chua, Yongquan Zeng, Liangxing Hu, Mingjin Dai, Fakun Wang, Fangyuan Sun, Song Zhu, Lianhe Li, Alexander Giles Davies, Edmund Harold Linfield, Chuan Seng Tan, Yuri Kivshar, Qi Jie Wang
Publikováno v:
Light: Science & Applications, Vol 12, Iss 1, Pp 1-9 (2023)
Abstract One of the most exciting breakthroughs in physics is the concept of topology that was recently introduced to photonics, achieving robust functionalities, as manifested in the recently demonstrated topological lasers. However, so far almost a
Externí odkaz:
https://doaj.org/article/4fc239bb439b4ff5a434ffc1e5bcd748
Autor:
Po‐Lun Yeh, Bo‐Rui Wu, Yi‐Wei Peng, Chen‐Wei Wu, Yue‐Tong Jheng, Kwang Hong Lee, Qimiao Chen, Chuan Seng Tan, Guo‐En Chang
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 11, Pp n/a-n/a (2023)
Abstract Ge‐on‐insulators (GOIs) have been extensively explored as a potential platform for electronic‐photonic integrated circuits (EPICs), enabling various emerging applications. Although an efficient electrically‐injected light source is h
Externí odkaz:
https://doaj.org/article/aace53555cbe4f968ae974570cb6a209
Publikováno v:
IEEE Photonics Journal, Vol 15, Iss 4, Pp 1-7 (2023)
In this study, SiN-based gratings with various radius of curvature (r) are designed and fabricated for the optical addressing of trapped Sr+ ion. The beam width of the light coupled out from the gratings is investigated using a self-developed Python-
Externí odkaz:
https://doaj.org/article/25ee2ee77a7e46ecb7762b4e7141e5e5
Autor:
Youngmin Kim, Hyo‐Jun Joo, Melvina Chen, Bongkwon Son, Daniel Burt, Xuncheng Shi, Lin Zhang, Zoran Ikonic, Chuan Seng Tan, Donguk Nam
Publikováno v:
Advanced Science, Vol 10, Iss 17, Pp n/a-n/a (2023)
Abstract The technology to develop a large number of identical coherent light sources on an integrated photonics platform holds the key to the realization of scalable optical and quantum photonic circuits. Herein, a scalable technique is presented to
Externí odkaz:
https://doaj.org/article/33eba83d67794326a34669977414419b
Autor:
Bongkwon Son, Yiding Lin, Kwang Hong Lee, Joe Margetis, David Kohen, John Tolle, Chuan Seng Tan
Publikováno v:
IEEE Photonics Journal, Vol 14, Iss 3, Pp 1-6 (2022)
In this work, the metal-semiconductor-metal photodetectors were demonstrated on the Ge0.91Sn0.09-on-insulator (GeSnOI) platform. The responsivity was 0.24 and 0.06 A/W at wavelengths of 1,600 and 2,003 nm, respectively. Through a systematic study, it
Externí odkaz:
https://doaj.org/article/954ca2da9385415a814b95faee84894f
Autor:
Simon Chun Kiat Goh, Li Lynn Shiau, Lin Zhang, Bongkwon Son, Qimiao Chen, Jian Zhong, Salim Teddy, Chuan Seng Tan
Publikováno v:
IEEE Photonics Journal, Vol 13, Iss 2, Pp 1-11 (2021)
Germanium-tin (GeSn) is a CMOS-compatible group-IV material. Its growth, however, is plagued by the tendency of Sn segregation and the generation of defects within the GeSn layer when it is grown on the lattice-mismatched substrate. Thus far, thin Ge
Externí odkaz:
https://doaj.org/article/13ac621338174454b2ec8dbfb83f15a7
Publikováno v:
IEEE Photonics Journal, Vol 13, Iss 4, Pp 1-6 (2021)
In this work, silicon photonics structures for the optical addressing of trapped ion is developed for quantum computing applications. Grating-waveguide-grating structures of various designs are designed, and fabricated for various radius curvatures o
Externí odkaz:
https://doaj.org/article/9fbc2378abd64e1f8a5de683fa2e162d
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 2, Pp 101-110 (2021)
As a key approach to augment Moore's Law scaling, 3D integration technologies have enabled small form factor, low cost, diverse, modular and flexible assembly of integrated circuits in the semiconductor industry. It is therefore essential to adopt th
Externí odkaz:
https://doaj.org/article/d509d3cd39ff439387c5c0a2cd6a8a39
Autor:
Loke Wan Khai, Wang Yue, Lee Kwang Hong, Liu Zhihong, Xie Hanlin, Chiah Siau Ben, Kenneth Lee Eng Kian, Zhou Xing, Chuan Seng Tan, Ng Geok Ing, Eugene A. Fitzgerald, Yoon Soon Fatt
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 122-125 (2020)
N-p-n InGaP/GaAs double heterojunction bipolar transistor has been successfully grown on a 200 mm Ge/Si wafer using metalorganic chemical vapor deposition with low defect density of 107 cm-2. Non-gold metals of Ni/Ge/Al and Ti/Al are used to form the
Externí odkaz:
https://doaj.org/article/382fdee54aa84cff81c9cfc3c3429072