Výsledky vyhledávání - "Chuan Li Chang"

A CDM-like damage mechanism for multiple power domains fabricated with Deep N-well processes

Autor: Bill Kiang, Yu-Lin Chu, Jinn-Wen Young, Ming-Yi Wang, Chin-Yuan Ko, Hsi-Yu Kuo, Y. S. Tsai, Chuan-Li Chang, Kenneth Wu

Publikováno v: 2017 IEEE International Reliability Physics Symposium (IRPS).

In this paper, a mechanism of CDM (Charged-Device Model) — like damage is observed across separated power domain interfaces fabricated with DNW (Deep N-well) processes. This mechanism is modeled and validated by test patterns in a 40nm logic proces

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::459161c354005a39024f18f2237887aa
https://doi.org/10.1109/irps.2017.7936350

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Parameters Survey and Experiment on Steel Scaffold Components

Autor: Jian Xue Song, Chuan Li Chang

Publikováno v: Advanced Materials Research. :1513-1516

Ten construction sites are chosen as survey places, and several parameters for scaffold designing are collected, such as the wall thickness of steel tube, the weight of three kinds of couplers, the working tighten-moment on belts of couplers. Corresp

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dcc2baecce1ff259a86a2df9de591c7a
https://doi.org/10.4028/www.scientific.net/amr.368-373.1513

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Comparing Tests on Water Relating Stability of Polyester and Polyacrylonitrile Fiber Reinforced Asphalt Mixture

Autor: Chuan Li Chang, Jian Xue Song, Hai Rong Yang

Publikováno v: Advanced Materials Research. :742-746

Four kinds of fiber reinforced asphalt mixture formula are made, i.e., non fiber, polyester fiber, polyacrylonitrile fiber and the compound of the last two fibers, and then the Residual Marshall Stability (RMS) tests and Residual Cleavage Strength (R

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::507ba920302e94eacf3bd273a0bcf9e5
https://doi.org/10.4028/www.scientific.net/amr.287-290.742

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Low frequency noise degradation in ultra-thin oxide (15A/spl deg) analog n-MOSFETs resulting from valence-band tunneling

Autor: C.C. Cheng, Tahui Wang, C.F. Hsu, Chuan-Li Chang, J.W. You, H.C. Ma, J.W. Wu, G.W. Huang

Publikováno v: 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

The abnormal increase of low frequency flicker noise in analog n-MOSFETs with gate oxide, in the valence band tunneling domain, is investigated. In 15/spl Aring/ oxide devices, valence-band electron tunneling from Si substrate to poly-gate occurs at

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8c931e53dedaf90cca95d99d58ccd94f
https://doi.org/10.1109/relphy.2005.1493095

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Dissertation/ Thesis

The Development of Bipolar Junction Trasistor for Silicon Monolithic Microwave Integrated Circuits

Autor: Chuan-Li Chang, 張傳理

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For advancing the development of monolithic microwave integr- ated circuit(MMIC), the process modules of standard bipolar jun- ction transistor and poly-emitter bipolar junction transistor are studied in this thesis. These developmental modul

Externí odkaz: http://ndltd.ncl.edu.tw/handle/36569645345367198888

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Akademický článek

Temperature effect on the thermal properties of insulation paper.

Autor: Luo, Chuan^1,2 (AUTHOR), Zhao, Zhengang^1,2 (AUTHOR) zhaozhengang@kust.edu.cn, Zhang, Dacheng^1,2 (AUTHOR), Li, Chuan^2,3 (AUTHOR), Liu, Chang^1,2 (AUTHOR), Li, Yingna^1,2 (AUTHOR), Zhang, Jiahong^1,2 (AUTHOR)

Publikováno v: Electrical Engineering. Apr2021, Vol. 103 Issue 2, p1083-1091. 9p.

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