Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Chuan Che Wang"'
Autor:
Jeffrey Scott Cites, Jae Ik Kim, Chuan Che Wang, Jackson Lai, Won Jae Choi, Jae Won Choi, Mallory Mativenga, Timothy J. Tredwell, Carlo Kosik Williams, Eric J. Mozdy, Jin Jang
Publikováno v:
Solid-State Electronics. 54:299-302
We have studied the fabrication of ring oscillator and shift resistor using p-type metal–oxide–semiconductor (pMOS) TFTs based on silicon-on-glass (SiOG). The TFT exhibited field-effect mobility of 183 cm2/V s, threshold voltage of −0.30 V and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58e28dbcd3bdb266eb5e6501377cdd97
https://doi.org/10.1016/j.sse.2009.10.001
https://doi.org/10.1016/j.sse.2009.10.001
Autor:
Greg A. Kirkos, Ajaj Pareek, Mirela Gabriela Bancu, Tristan Shone, Chuan Che Wang, T.D. Kudrle, Clifford D. Fung, M. Waelti, Carlos H. Mastrangelo, James C. Hsiao
Publikováno v:
Sensors and Actuators A: Physical. 119:559-566
High-density micromirror arrays (1296 mirrors) have been fabricated with a process that combines the benefits of both bulk and surface micromachining. Arrays fabricated with this technique are characterized by optically flat mirrors characterized by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eeb5a5ed9fe34c403e9e675e79fb2f7e
https://doi.org/10.1016/j.sna.2004.10.038
https://doi.org/10.1016/j.sna.2004.10.038
Publikováno v:
IEEE Transactions on Electron Devices. 48:1575-1584
This paper discusses the fabrication and testing of two low-voltage force-balanced pressure sensors. In these devices the force acting on a diaphragm under external pressure and its corresponding deflection are counterbalanced with the force and defl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7057f22a2f9b3cdf18b8e104c3879573
https://doi.org/10.1109/16.936563
https://doi.org/10.1109/16.936563
Publikováno v:
Journal of Microelectromechanical Systems. 9:538-543
In this paper, a contamination-insensitive differential capacitive pressure sensor with a sealed gap is presented. This device is made of three polysilicon layers including a stationary middle plate and the top and bottom plates that are rigidly coup
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e56f81297699fdf0715d03653190c1ac
https://doi.org/10.1109/84.896776
https://doi.org/10.1109/84.896776
Autor:
Chuan Che Wang, Jin Jang, Seung Hyun Park, Carlo Kosik Williams, Moon Hyo Kang, Jeffrey Scott Cites, Sung Eun Ahn, Jun Hyuk Cheon
Publikováno v:
IEEE Electron Device Letters. 30:145-147
We have studied the fabrication of ultrathin single-crystalline-silicon thin-film transistors (TFTs) on glass. The single-crystalline Si layer was transferred to glass by hydrogen implantation and anodic bonding. The thickness of the silicon-on-glass
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::787a27138323e725e13777a83583160e
https://doi.org/10.1109/led.2008.2010065
https://doi.org/10.1109/led.2008.2010065
Publikováno v:
Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308).
In this paper, a contamination insensitive differential capacitive pressure sensor with a sealed gap is presented. This device is made of three polysilicon layers including a stationary middle plate and the top and bottom plates that are rigidly coup
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b55c7f717a9dc77d0910b99258d6b903
https://doi.org/10.1109/memsys.2000.838577
https://doi.org/10.1109/memsys.2000.838577
Publikováno v:
IEEE Transactions on Electron Devices. Aug2001, Vol. 48 Issue 8, p1575. 10p. 6 Black and White Photographs, 9 Diagrams, 4 Graphs.
Autor:
Jun Hyuk Cheon, Seung Hyun Park, Moon Hyo Kang, Jin Jang, Sung Eun Ahn, Cites, Jeffrey, Williams, Carlo Kosik, Chuan Che Wang
Publikováno v:
IEEE Electron Device Letters; Feb2009, Vol. 30 Issue 2, p145-147, 3p, 1 Chart, 2 Graphs