Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Chu-Hsin Liang"'
Autor:
David C. Ahlgren, Chu-Hsin Liang, Hyotae Choo, Victor Chan, Jun Yuan, Jae-Eun Park, Enhai Zhao, Xiaobin Yuan, R. Lindsay, Huiling Shang, Jing Wang, Terence B. Hook, Sung-Joon Park
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 8:501-508
Gate-induced-drain-leakage (GIDL) current in 45-nm state-of-the-art MOSFETs is characterized in detail. For the current technology node with a 1.2-V power-supply voltage, the GIDL current is found to increase in MOSFETs with higher channel-doping lev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f341c6381cfab32417c8d74655f50c01
https://doi.org/10.1109/tdmr.2008.2002350
https://doi.org/10.1109/tdmr.2008.2002350
Autor:
Xiaobin Yuan, Jae-Eun Park, Jin Wang, Enhai Zhao, David Ahlgren, Terence Hook, Jun Yuan, Victor Chan, Huiling Shang, Chu-Hsin Liang, Richard Lindsay, Sungjoon Park, Hyotae Choo
Publikováno v:
IEEE Transactions on Device and Materials Reliability.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c93e4a35473e1ded630bc6cc8a7283d1
https://doi.org/10.1109/tdmr.2008.923458
https://doi.org/10.1109/tdmr.2008.923458
Autor:
Hyotae Choo, Victor Chan, Sung-Joon Park, Jun Yuan, Jing Wang, Enhai Zhao, Huiling Shang, Jae-Eun Park, Terence B. Hook, Xiaobin Yuan, David C. Ahlgren, Chu-Hsin Liang, R. Lindsay
Publikováno v:
2007 IEEE International Integrated Reliability Workshop Final Report.
Gate-induced-drain-leakage (GIDL) current in 45 nm state-of-the-art MOSFETs is characterized in detail. For the current technology node with a 1.2 V power-supply voltage, the GIDL current is found to increase in MOSFETs with higher channel-doping lev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5d63e8775b9f35561fb0a60da2e8995
https://doi.org/10.1109/irws.2007.4469224
https://doi.org/10.1109/irws.2007.4469224
Autor:
Xiaobin Yuan, Jae-Eun Park, Jing Wang, Enhai Zhao, Ahlgren, D., Hook, T., Jun Yuan, Chan, V., Huiling Shang, Chu-Hsin Liang, Lindsay, R., Sungjoon Park, Hyotae Choo
Publikováno v:
2007 IEEE International Integrated Reliability Workshop Final Report; 2007, p70-73, 4p
Autor:
Xiaobin Yuan, Jae-Eun Park, Jing Wang, Enhai Zhao, Ahlgren, D.C., Hook, T., Jun Yuan, Chan, V., Huiling Shang, Chu-Hsin Liang, Lindsay, R., Sungjoon Park, Hyotae Choo
Publikováno v:
IEEE Transactions on Device & Materials Reliability; Sep2008, Vol. 8 Issue 3, p501-508, 8p