Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Chu Jie Huang"'
Autor:
Huan Jiang, Chu-Jie Huang
Publikováno v:
Asian Journal of Andrology, Vol 26, Iss 2, Pp 183-188 (2024)
Aberrant sperm protamination is linked to sperm dysmorphology and nuclear chromatin condensation. Yet, its effects on sperm cytoplasmic maturation remain largely unexplored. The relationships of protamines, sperm morphology, DNA damage, and cytoplasm
Externí odkaz:
https://doaj.org/article/2c02dce65f774990a3679e5765838c3e
Publikováno v:
Journal of Magnesium and Alloys, Vol 8, Iss 2, Pp 499-509 (2020)
Mechanical properties and biocorrosion behaviors in simulated body fluid (SBF) of newly developed Mg–5.8 Zn–0.5 Zr–x Yb (ZK60–x Yb, x = 0, 1.0, 2.0 wt%) magnesium alloys in the solution-treated (T4) and artificially-aged (T6) conditions were
Externí odkaz:
https://doaj.org/article/79b6df30e3e84a0e8c0eb0e0aeea9faa
Publikováno v:
Materials Letters. 282:128682
Ytterbium (Yb) containing magnesium alloys have aroused extensive interests because of their excellent mechanical properties. Unfortunately, their potential biomedical applications as a biodegradable implant material remain uncertain to date. In this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70f781eda9d445a89bb4b17e33f9d334
https://doi.org/10.1016/j.matlet.2020.128682
https://doi.org/10.1016/j.matlet.2020.128682
Publikováno v:
Applied Physics Letters. 114:093105
In this letter, we report the impact of the barrier layer on the performance of HfO2-based conductive bridge RAM (CBRAM) devices with TeTiW as the source layer. The considerable improvement of retention in the CBRAM device using TiW as the barrier la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ed2954d04b3b2adaa4f4790586398ef
https://doi.org/10.1063/1.5087421
https://doi.org/10.1063/1.5087421
Autor:
Tseung-Yuen Tseng, Sridhar Chandrasekaran, Franky Lumbantoruan, Firman Mangasa Simanjuntak, Chih Chieh Yang, Chu Jie Huang, Pragya Singh, Chun Chieh Lin
Publikováno v:
Semiconductor Science and Technology. 32:124003
An engineering nanorod array in a ZnO-based electrochemical metallization device for nonvolatile memory applications was investigated. A hydrothermally synthesized nanorod layer was inserted into a Cu/ZnO/ITO device structure. Another device was fabr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::922b0566d4f14098f2749315f3702100
https://doi.org/10.1088/1361-6641/aa9598
https://doi.org/10.1088/1361-6641/aa9598
Autor:
Jiang, Huan, Huang, Chu-Jie
Publikováno v:
Asian Journal of Andrology; Mar/Apr2024, Vol. 26 Issue 2, p183-188, 6p
Autor:
Firman Mangasa Simanjuntak, Pragya Singh, Sridhar Chandrasekaran, Franky Juanda Lumbantoruan, Chih-Chieh Yang, Chu-Jie Huang, Chun-Chieh Lin, Tseung-Yuen Tseng
Publikováno v:
Semiconductor Science & Technology; Dec2017, Vol. 32 Issue 12, p1-1, 1p
Publikováno v:
Applied Physics Letters; 3/4/2019, Vol. 114 Issue 9, pN.PAG-N.PAG, 4p, 1 Diagram, 7 Graphs