Zobrazeno 1 - 10
of 81
pro vyhledávání: '"Chu‑Young Cho"'
Autor:
Walid Amir, Ju-Won Shin, Ki-Yong Shin, Jae-Moo Kim, Chu-Young Cho, Kyung-Ho Park, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Tae-Woo Kim
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
Abstract The characteristics of traps between the Al0.25Ga0.75N barrier and the GaN channel layer in a high-electron-mobility-transistors (HEMTs) were investigated. The interface traps at the Al0.25Ga0.75N/GaN interface as well as the border traps we
Externí odkaz:
https://doaj.org/article/fab21a9fee9a4362ab6f717d38ac996d
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
Abstract Gate-controlled amplifiable ultraviolet phototransistors have been demonstrated using AlGaN/GaN high-electron-mobility transistors (HEMTs) with very thin AlGaN barriers. In the AlGaN/GaN HEMTs, the dark current between the source and drain i
Externí odkaz:
https://doaj.org/article/780a418e1f8c4a059ec1398e8e7efe68
Publikováno v:
AIP Advances, Vol 11, Iss 11, Pp 115203-115203-5 (2021)
AlGaN/GaN high electron mobility transistors (HEMTs) possess excellent electrical and thermal properties. In this study, we examined the electrical performance of AlGaN/GaN HEMTs to clarify the operational mechanism of the device with temperature var
Externí odkaz:
https://doaj.org/article/b5ca43ac0b4940ac8a348aef7212a5be
Autor:
Surajit Chakraborty, Walid Amir, Ju-Won Shin, Ki-Yong Shin, Chu-Young Cho, Jae-Moo Kim, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Hyuk-Min Kwon, Dae-Hyun Kim, Tae-Woo Kim
Publikováno v:
Materials, Vol 15, Iss 23, p 8415 (2022)
We presented an explicit empirical model of the thermal resistance of AlGaN/GaN high-electron-mobility transistors on three distinct substrates, including sapphire, SiC, and Si. This model considered both a linear and non-linear thermal resistance mo
Externí odkaz:
https://doaj.org/article/43222bcab01c427883a81bd20339bfe1
Autor:
Walid Amir, Ju‑Won Shin, Ki‑Yong Shin, Jae‑Moo Kim, Chu‑Young Cho, Kyung‑Ho Park, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Tae‑Woo Kim
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-1 (2021)
Externí odkaz:
https://doaj.org/article/e9fc89a38b0c4ba2b1939ae82fa6fb02
Autor:
Ju-Young Pyo, Jin-Hyeok Jeon, Yumin Koh, Chu-young Cho, Hyeong-Ho Park, Kyung-Ho Park, Sang Woon Lee, Won-Ju Cho
Publikováno v:
AIP Advances, Vol 8, Iss 8, Pp 085106-085106-5 (2018)
In this paper, we fabricated an AlGaN/GaN high electron mobility transistor (HEMT) pH sensor with an extended-gate (EG). As the carrier mobility of the transducer that is used as the biosensor is increased, the electrical signal conversion efficiency
Externí odkaz:
https://doaj.org/article/9990bf2574934118aafc849486d08c45
Autor:
Walid Amir, Ju-Won Shin, Ki-Yong Shin, Surajit Chakraborty, Chu-Young Cho, Jae-Moo Kim, Sang-Tae Lee, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Dae-Hyun Kim, Tae-Woo Kim
Publikováno v:
IEEE Transactions on Electron Devices. 70:2988-2993
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b5fbf60a499b5e14c02c350cf6d8d8d
https://doi.org/10.1109/ted.2023.3268626
https://doi.org/10.1109/ted.2023.3268626
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 19-22 (2022)
We have studied the effects of proton irradiation on the AlGaN/GaN HEMTs with AlN buffer layer as well as conventional GaN buffer layer. It was found that a short time proton irradiation (~ 50 sec) can promote beneficial effects on device performance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e84905d6419c975d2a746eeaa0c62863
https://ieeexplore.ieee.org/document/9615384/
https://ieeexplore.ieee.org/document/9615384/
Autor:
Kyungho Park, Jae-Moo Kim, Walid Amir, Tae-Woo Kim, Ki-Yong Shin, Hiroki Sugiyama, Chu-Young Cho, Takuya Hoshi, Takuya Tsutsumi, Hideaki Matsuzaki, Ju-Won Shin
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
Scientific Reports
Scientific Reports
The characteristics of traps between the Al0.25Ga0.75N barrier and the GaN channel layer in a high-electron-mobility-transistors (HEMTs) were investigated. The interface traps at the Al0.25Ga0.75N/GaN interface as well as the border traps were experi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::60362455c4bce92f49e1b352eac53f6c
https://doaj.org/article/fab21a9fee9a4362ab6f717d38ac996d
https://doaj.org/article/fab21a9fee9a4362ab6f717d38ac996d
Publikováno v:
IEEE Transactions on Electron Devices. 68:1513-1517
We have successfully grown AlGaN/GaN high electron mobility transistor (HEMT) structure on the high-quality undoped thick AlN buffer layer with large band offset to replace the conventional high-resistivity GaN buffer layer. The AlGaN/GaN HEMT fabric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b2bb165a15688d414780be5e595bd68
https://doi.org/10.1109/ted.2021.3057000
https://doi.org/10.1109/ted.2021.3057000