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Breakdown of agreement between non-relativistic and relativistic quantum dynamical predictions in the non-relativistic regime

Autor: Lan, BL, Pourzand, M, Chu, RJ

Publikováno v: Results in Physics 12 147-152 (2019)

To study quantum dynamics in the non-relativistic regime, the standard practice is to use non-relativistic quantum mechanics, instead of the relativistic theory, because it is thought the approximate non-relativistic result is always close to the rel

Externí odkaz: http://arxiv.org/abs/1808.10096

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Engineering Photocarrier Redistributions in Graphene/III-V Quantum Dot Mixed-Dimensional Heterostructures for Radiative Recombination Enhancements.

Autor: Chu RJ; Center for Quantum Technology, Korea Institute of Science and Technology, Seoul, 02792, South Korea.; Division of Nano and Information Technology, KIST School at Korea National University of Science and Technology, Seoul, 02792, South Korea., Lung QND; Center for Quantum Technology, Korea Institute of Science and Technology, Seoul, 02792, South Korea., Laryn T; Center for Quantum Technology, Korea Institute of Science and Technology, Seoul, 02792, South Korea.; Division of Nano and Information Technology, KIST School at Korea National University of Science and Technology, Seoul, 02792, South Korea., Choi WJ; Center for Quantum Technology, Korea Institute of Science and Technology, Seoul, 02792, South Korea., Jung D; Center for Quantum Technology, Korea Institute of Science and Technology, Seoul, 02792, South Korea.; Division of Nano and Information Technology, KIST School at Korea National University of Science and Technology, Seoul, 02792, South Korea.

Publikováno v: Small (Weinheim an der Bergstrasse, Germany) [Small] 2024 Nov 15, pp. e2406197. Date of Electronic Publication: 2024 Nov 15.

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Reduction of GaAs Buffer Thickness and Its Impact on Epitaxially Integrated III-V Quantum Dot Lasers on a Si Substrate.

Autor: Laryn T; Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea.; Nanoscience and Technology, KIST School at University of Science and Technology, Seoul 02792, South Korea., Chu RJ; Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea.; Nanoscience and Technology, KIST School at University of Science and Technology, Seoul 02792, South Korea., Kim Y; Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea.; Department of Materials Science and Engineering, Korea University, Seoul 02841, South Korea., Madarang MA; Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea.; Nanoscience and Technology, KIST School at University of Science and Technology, Seoul 02792, South Korea., Lung QND; Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea., Ahn DH; Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea., Han JH; Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea., Choi WJ; Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea., Jung D; Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea.; Nanoscience and Technology, KIST School at University of Science and Technology, Seoul 02792, South Korea.

Publikováno v: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2024 Jun 12; Vol. 16 (23), pp. 30209-30217. Date of Electronic Publication: 2024 Jun 03.

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Low-threshold 2 µm InAs/InP quantum dash lasers enabled by punctuated growth.

Autor: Chu RJ, Laryn T, Ahn DH, Han JH, Kim H, Choi WJ, Jung D

Publikováno v: Optics express [Opt Express] 2024 Jan 15; Vol. 32 (2), pp. 1334-1341.

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Reduction of Structural Defects in the GaSb Buffer Layer on (001) GaP/Si for High Performance InGaSb/GaSb Quantum Well Light-Emitting Diodes.

Autor: Yeon E; Center for Optoelectronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea.; Department of Materials Science and Engineering, Korea University, Seoul 02481, South Korea., Woo S; Center for Optoelectronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea.; Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, South Korea., Chu RJ; Center for Optoelectronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea.; Division of Nanoscience and Technology, University of Science and Technology, Seoul 02792, South Korea., Lee IH; Department of Materials Science and Engineering, Korea University, Seoul 02481, South Korea., Jang HW; Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, South Korea., Jung D; Center for Optoelectronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea.; Division of Nanoscience and Technology, University of Science and Technology, Seoul 02792, South Korea., Choi WJ; Center for Optoelectronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea.

Publikováno v: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2023 Dec 06; Vol. 15 (48), pp. 55965-55974. Date of Electronic Publication: 2023 Nov 18.

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Graphene/III-V Quantum Dot Mixed-Dimensional Heterostructure for Enhanced Radiative Recombinations via Hole Carrier Transfer.

Autor: Lung QND; Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea.; Division of Nanoscience and Technology, KIST School at University of Science and Technology, Seoul 02792, South Korea., Chu RJ; Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea.; Division of Nanoscience and Technology, KIST School at University of Science and Technology, Seoul 02792, South Korea., Kim Y; Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea.; Department of Materials Science and Engineering, Korea University, Seoul 02841, South Korea., Laryn T; Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea.; Division of Nanoscience and Technology, KIST School at University of Science and Technology, Seoul 02792, South Korea., Madarang MA; Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea.; Division of Nanoscience and Technology, KIST School at University of Science and Technology, Seoul 02792, South Korea., Kovalchuk O; Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea., Song YW; Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea., Lee IH; Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea., Choi C; Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea., Choi WJ; Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea., Jung D; Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea.; Division of Nanoscience and Technology, KIST School at University of Science and Technology, Seoul 02792, South Korea.

Publikováno v: Nano letters [Nano Lett] 2023 Apr 26; Vol. 23 (8), pp. 3344-3351. Date of Electronic Publication: 2023 Apr 07.

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Punctuated growth of InAs quantum dashes-in-a-well for enhanced 2-μm emission.

Autor: Chu RJ; Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul, 02792, South Korea.; Division of Nanoscience and Technology, University of Science and Technology, Seoul, 02792, South Korea., Kim Y; Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul, 02792, South Korea.; Department of Materials Science and Engineering, Korea University, Seoul, 02841, South Korea., Woo SW; Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul, 02792, South Korea.; Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, South Korea., Choi WJ; Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul, 02792, South Korea., Jung D; Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul, 02792, South Korea. daehwan.jung@kist.re.kr.; Division of Nanoscience and Technology, University of Science and Technology, Seoul, 02792, South Korea. daehwan.jung@kist.re.kr.

Publikováno v: Discover nano [Discov Nano] 2023 Mar 06; Vol. 18 (1), pp. 31. Date of Electronic Publication: 2023 Mar 06.

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Enhanced Photoluminescence of 1.3 μm InAs Quantum Dots Grown on Ultrathin GaAs Buffer/Si Templates by Suppressing Interfacial Defect Emission.

Autor: Kim Y; Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea.; Division of Nano & Information Technology, University of Science and Technology, Seoul 02792, South Korea., Chu RJ; Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea.; Division of Nano & Information Technology, University of Science and Technology, Seoul 02792, South Korea., Ryu G; Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea., Woo S; Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea.; Department of Materials Science and Engineering, Korea University, Seoul 02481, South Korea., Lung QND; Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea.; Division of Nano & Information Technology, University of Science and Technology, Seoul 02792, South Korea., Ahn DH; Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea., Han JH; Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea., Choi WJ; Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea., Jung D; Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea.; Division of Nano & Information Technology, University of Science and Technology, Seoul 02792, South Korea.

Publikováno v: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2022 Oct 05; Vol. 14 (39), pp. 45051-45058. Date of Electronic Publication: 2022 Sep 26.

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