Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Chrystelle Lagahe"'
Autor:
Richard Fontaniere, Arnaud Castex, Marcel Broekaart, Chrystelle Lagahe-Blanchard, Karine Landry
Publikováno v:
ECS Transactions. 50:371-377
Significant distortion can originate during the bonding process, resulting in overlay issues for final backside illumination image sensor wafer processing, impacting final wafer yield and device reliability. This paper presents a distortion free bond
Autor:
Chrystelle Lagahe, Arnaud Castex, Richard Fontaniere, Stephane Thieffry, Karine Landry, Marcel Broekaart
Publikováno v:
ECS Transactions. 35:145-151
This paper presents a new wafer bonding process used for back side illuminated (BSI) image sensors manufacturing, with high bonding energy of 2 J/m2, without peripheral edge bonding voids that occur with the standard process.
Publikováno v:
ECS Transactions. 3:79-90
Direct wafer bonding is a generic technology enabling the fabrication of innovative structures. Adequate surface treatments allow bonding of virgin as well as partially or fully processed wafers, leading to new Anti-sticking BSOI, Patterned BSOI and
Publikováno v:
ICICDT
The wafer stacking technology for 3D integration requires high quality bonding interfaces with uniform bonding films. Two wafer level stacking technologies - Smart Stacking™ and Smart Cut™ - are developed to address the manufacturing challenges f
Autor:
Christian Seassal, Chrystelle Lagahe-Blanchard, Xavier Letartre, G. Hollinger, Joost Brouckaert, Roel Baets, D. Van Thourhout, Gunther Roelkens, J-M. Fedeli, A. Kazmierczak, Philippe Regreny, L. Di Cioccio, P. Rojo Romeo, J. Van Campenhout
Publikováno v:
MATERIALS TODAY
Photonic integrated circuits offer the potential of realizing low-cost, compact optical functions. Silicon-on-insulator (SOI) is a promising material platform for this photonic integration, as one can rely on the massive electronics processing infras
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::35011d742b451e4b9c42397c3ed771ef
https://hdl.handle.net/1854/LU-389064
https://hdl.handle.net/1854/LU-389064
Autor:
Arnaud Castex, Marcel Broekaart, Stephane Thieffry, Karine Landry, Richard Fontanière, Chrystelle Lagahe
Publikováno v:
ECS Meeting Abstracts. :1157-1157
not Available.
Publikováno v:
ECS Meeting Abstracts. :1355-1355
not Available.
Publikováno v:
Journal of Applied Physics. 99:103509
The effect of hydrogen implantation in silicon single crystals is studied using high-resolution x-ray scattering. Large strains normal to the sample surface are evidenced after implantation. A simple and direct procedure to extract the strain profile
Publikováno v:
ECS Meeting Abstracts. :482-482
not Available.
Autor:
Lea di Cioccio, Beatrice Biasse, Marek Kostrzewa, Marc Zussy, Jerome Dechamp, Barbara Charlet, Maud Vinet, Jean Marc Fedeli, Thierry Poiroux, Nelly Kernevez, Philippe Regreny, Chrystelle Lagahe-Blanchard, Bernard Aspar
Publikováno v:
ECS Meeting Abstracts. :518-518
not Available.