Zobrazeno 1 - 10
of 157
pro vyhledávání: '"Chrysler M"'
Autor:
Lotfimarangloo, S., Chirayath, V. A., Sterne, P. A., Mahdy, H., Gladen, R. W., Driscoll, J., Rooks, M., Chrysler, M., Koymen, A. R., Asaadi, J., Weiss, A. H.
We present measurements and theoretical modeling demonstrating the capability of Doppler Broadened annihilation gamma Spectroscopy (DBS) to provide element-specific information from the topmost atomic layer of surfaces that are either clean or covere
Externí odkaz:
http://arxiv.org/abs/2401.00581
Autor:
Chrysler, M., Gabel, J., Lee, T. -L., Zhu, Z., Kaspar, T. C., Sushko, P. V., Chambers, S. A., Ngai, J. H.
Charge redistribution across heterojunctions has long been utilized to induce functional response in materials systems. Here we examine how the composition of the terminating surface affects charge transfer across a heterojunction consisting of Si an
Externí odkaz:
http://arxiv.org/abs/2303.14323
Autor:
Chrysler, M., Gabel, J., Lee, T. -L., Penn, A. N., Matthews, B. E., Kepaptsoglou, D. M., Ramasse, Q. M., Paudel, J. R., Sah, R. K., Grassi, J. D., Zhu, Z., Gray, A. X., LeBeau, J. M., Spurgeon, S. R., Chambers, S. A., Sushko, P. V., Ngai, J. H.
Publikováno v:
Phys. Rev. Materials 5, 104603 (2021)
We demonstrate that the interfacial dipole associated with bonding across the SrTiO3/Si heterojunction can be tuned through space charge, thereby enabling the band alignment to be altered via doping. Oxygen impurities in Si act as donors that create
Externí odkaz:
http://arxiv.org/abs/2105.13443
Autor:
Chirayath, V. A., Gladen, R. W., McDonald, A. D., Fairchild, A. J., Joglekar, P. V., Satyal, S., Lim, Z. H., Shead, T. N., Chrysler, M. D., Mukherjee, S., Barnett, B. M., Byrnes, N. K., Koymen, A. R., Greaves, R. G., Weiss, A. H.
Here we describe an advanced multi functional, variable-energy positron beam system capable of measuring the energies of multiple positron-induced electrons in coincidence with the Doppler-shifted gamma photon resulting from the annihilation of the c
Externí odkaz:
http://arxiv.org/abs/2001.10145
Autor:
Weiss, A. H., Chirayath, V. A., Gladen, R. W., Fairchild, A. J., Chrysler, M. D., Sterne, P. A., Koymen, A. R.
We present Doppler broadened gamma spectra, obtained using the newly developed advanced positron beam at the University of Texas at Arlington, from a sample consisting of 6 to 8 layers of graphene (MLG) on polycrystalline Cu. The kinetic energy of th
Externí odkaz:
http://arxiv.org/abs/1907.10579
Autor:
Chirayath, V. A., Fairchild, A. J., Gladen, R. W., Chrysler, M. D., Koymen, A. R., Weiss, A. H.
Positronium (Ps) formation on the surface of clean polycrystalline copper (Cu), highly oriented pyrolytic graphite (HOPG) and multi layer graphene (MLG) grown on a polycrystalline copper substrate has been investigated as a function of incident posit
Externí odkaz:
http://arxiv.org/abs/1907.10573
Autor:
Ahmadi-Majlan, K., Zhang, H., Shen, X., Moghadam, M. J., Chrysler, M., Conlin, P., Hensley, R., Su, D., Wei, J. Y. T., Ngai, J. H.
Thin films of optimally-doped (001)-oriented YBa2Cu3O7-{\delta} are epitaxially integrated on silicon (001) through growth on a single crystalline SrTiO3 buffer. The former is grown using pulsed-laser deposition and the latter is grown on Si using ox
Externí odkaz:
http://arxiv.org/abs/1710.08600
Autor:
Chirayath, V. A., Callewaert, V., Chrysler, M. D., Fairchild, A. J., Gladen, R. W., Mcdonald, A. D., Imam, S. K., Shastry, K., Koymen, A. R., Saniz, R., Barbiellini, B., Rajeshwar, K., Partoens, B., Weiss, A. H.
Publikováno v:
Nature Communications volume 8, Article number: 16116 (2017)
We report the first direct observation of electron emission into the vacuum as a result of a VVV Auger transition resulting from the relaxation of a deep hole in the valence band. A beam of low energy (<1.25eV) positrons was used to deposit positrons
Externí odkaz:
http://arxiv.org/abs/1610.09575
Autor:
Moghadam, J., Ahmadi-Majlan, K., Shen, X., Droubay, T., Bowden, M., Chrysler, M., Su, D., Chambers, S. A., Ngai, J. H.
The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to electrically coupling crystalline oxides with semiconductors to realize functional behavior is controlli
Externí odkaz:
http://arxiv.org/abs/1410.7327
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.