Zobrazeno 1 - 10
of 180
pro vyhledávání: '"Chroboczek, J. A."'
Autor:
Benwadih, Mohammed, Chroboczek, J. A., Ghibaudo, Gerard, Coppard, Romain, Vuillaume, Dominique
Publikováno v:
J. Appl. Phys., 117, 055707 (2015)
Thin film transistors, with channels composed of In-X-Zn oxides, IXZO, with X dopants: Ga, Sb, Be, Mg, Ag, Ca, Al, Ni, and Cu, were fabricated and their I-V characteristics were taken at selected temperatures in the 77K
Externí odkaz:
http://arxiv.org/abs/1505.04291
Autor:
Benwadih, Mohammed, Chroboczek, J. A., Ghibaudo, Gerard, Coppard, Romain, Vuillaume, Dominique
Publikováno v:
J. Appl. Phys. 115, 214501 (2014)
Alloying of In/Zn oxides with various X atoms stabilizes the IXZO structures but generates electron traps in the compounds, degrading the electron mobility. To assess whether the latter is linked to the oxygen affinity or the ionic radius, of the X e
Externí odkaz:
http://arxiv.org/abs/1412.7710
Autor:
Benwadih, Mohammed, Chroboczek, J. A., Ghibaudo, Gérard, Coppard, Romain, Vuillaume, Dominique
Publikováno v:
Journal of Applied Physics; 2015, Vol. 117 Issue 5, p055707-1-055707-5, 5p, 5 Graphs
Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors.
Publikováno v:
Journal of Applied Physics; Jun2010, Vol. 107 Issue 11, p114507, 7p, 1 Diagram, 1 Chart, 6 Graphs
Publikováno v:
Journal of Applied Physics; 9/1/1997, Vol. 82 Issue 5, p2676, 4p, 5 Graphs
Publikováno v:
Journal of Applied Physics; 9/1/1997, Vol. 82 Issue 5, p2671, 5p, 2 Diagrams, 1 Chart, 4 Graphs
Publikováno v:
Journal of Applied Physics; 3/15/1996, Vol. 79 Issue 6, p3330, 7p, 9 Graphs
Publikováno v:
Gene Therapy. 6:171-181
New strategies to improve the outcome of gene therapy often employ a nonviral gene delivery, which is most likely to fulfil microbiological safety criteria and be retained in the clinical setting. Here we show that efficient gene transfer can be achi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0e021dbf7b61dfcb9ef4c691745ff7ea
https://doi.org/10.1038/sj.gt.3300801
https://doi.org/10.1038/sj.gt.3300801
Autor:
Fang, Z., Chroboczek, J. A., Ghibaudo, G., Buckley, J., De Salvo, B., Li, X., Yu, Hongyu, Kwong, Dim Lee
In this brief, low-frequency noise (LFN) characteristics are studied in oxide-based (TiN/HfOx/Pt) resistive random access nemory cells having different dimensions. It is confirmed that, for the low resistance state (LRS), current conduction is locali
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1392::446ee65c5df3a3cb18efcfa0775878cf
https://hdl.handle.net/10356/99021
https://hdl.handle.net/10356/99021
Autor:
Xu, Y., Minari, T., Kazuito, T., Gwoziecki, R., Balestra, F., Chroboczek, J. A., gerard ghibaudo
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2011, 98, pp.033505
HAL
Applied Physics Letters, American Institute of Physics, 2011, 98, pp.033505
HAL
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::b0878b2fa7c881a00eaa8fc2672e8597
https://hal.archives-ouvertes.fr/hal-00596188
https://hal.archives-ouvertes.fr/hal-00596188