Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Christopher Ordonio"'
Publikováno v:
Optical Microlithography XXXI.
Line edge roughness (LER) reduction is critical during the patterning process definition and development, as the critical dimension (CD) and pitch scale in advanced semiconductor technology nodes. In this paper, we will focus on a 7nm self-aligned do
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cdc451a2ae560f9ef9a4bd3cb435748
https://doi.org/10.1117/12.2297424
https://doi.org/10.1117/12.2297424
Autor:
Dhruv Singh, A. Gassaria, V. Chauhan, A. da Silva, P. Lindo, Daniel J. Dechene, M. Gribelyuk, I. Ahsan, M. Hasan, Judson R. Holt, Rod Augur, Jaeger Daniel, G. Northrop, G. Gomba, Ghosh Somnath, H. Narisetty, Basanth Jagannathan, Ting-Hsiang Hung, P. Liu, Y. Zhong, T. Gordon, Y. Fan, C. Schiller, A. Blauberg, O. Patterson, B. Morganfeld, Andres Bryant, J. Choo, T. Nigam, B. Senapati, V. Sardesai, N. Baliga, C. An, I. Ramirez, Rishikesh Krishnan, Arkadiusz Malinowski, S. Lucarini, Z. Sun, Sadanand V. Deshpande, R. Bhelkar, Mahender Kumar, Kong Boon Yeap, D. Conklin, Q. Fang, R. Gauthier, Purushothaman Srinivasan, S. Crown, M. Ozbek, Linjun Cao, G. Han, Z. Song, L. Huang, C. Serrau, R. Sweeney, M. Tan, Keith Donegan, Souvick Mitra, A. Zainuddin, P. Agnello, Balasubramanian S. Haran, Haifeng Sheng, B. Greene, A. Hassan, Tabakman Keith, Xin Wang, Sanjay Parihar, L. Cheng, M. Lagus, Jessica Dechene, D. Xu, G. Gifford, M. Zhao, Jeyaraj Antony Johnson, Y. Yan, Rick Carter, Manoj Joshi, W. Kim, Gabriela Dilliway, Jack M. Higman, S. Kalaga, Kai Zhao, Jinping Liu, A. Ogino, M. Lipinski, Amanda L. Tessier, Garo Jacques Derderian, S. Madisetti, N. Shah, Christopher Ordonio, M. Aminpur, Rakesh Ranjan, S. Saudari, Christa Montgomery, Tony Tae-Hyoung Kim, Jeric Sarad, Jae Gon Lee, Bharat Krishnan, Joseph F. Shepard, L. Hu, J. Sporre, Akil K. Sutton, Eswar Ramanathan, Cathryn Christiansen, J.H. Han, J. Lemon, Patrick Justison, Natalia Borjemscaia, Scott C. Johnson, B. Cohen, Kan Zhang, Srikanth Samavedam, G. Xu, T. Xuan, Unoh Kwon, C. Meng, Katsunori Onishi, Y. Shi, C. Huang, R. Coleman, Manfred Eller, Shreesh Narasimha, B. Kannan, J. Yang, Vivek Joshi, W. Ma, Christopher D. Sheraw, A. K. M. Mahalingam, Craig Child, E. Woodard, Tao Chu, Y. Jin, D. K. Sohn, Hasan M. Nayfeh, Mary Claire Silvestre, M. Lingalugari, G. Biery, Tian Shen, Carl J. Radens, E. Kaste, C-H. Lin, K. Han, K. Anil, Ankur Arya, Mehta Jaladhi, Jia Zeng, S.L. Liew, Michael V. Aquilino, M. Yu, M. Chen, Rohit Pal, E. Maciejewski, Stephan Grunow, Robert Fox, Rinus T. P. Lee
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
We present a fully integrated 7nm CMOS platform featuring a 3rd generation finFET architecture, SAQP for fin formation, and SADP for BEOL metallization. This technology reflects an improvement of 2.8X routed logic density and >40% performance over th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5545f519d7dcbb19a8a64d95e77053fd
https://doi.org/10.1109/iedm.2017.8268476
https://doi.org/10.1109/iedm.2017.8268476
Autor:
Mary Claire Silvestre, Eswar Ramanathan, Mukesh Gogna, Christopher Ordonio, Anbu Selvam Km Mahalingam, John Schaller
Publikováno v:
2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
A conventional back end of line (BEOL) post-lithography rework process is usually considered as a non-critical process compared to other process steps in a silicon flow in advanced technologies. This paper discusses the impact of this non-critical pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::760bbde5f34951f426c91d3e1b50157c
https://doi.org/10.1109/asmc.2016.7491093
https://doi.org/10.1109/asmc.2016.7491093
Autor:
Aleksandra Clancy, Ayman Hamouda, Ashwini Chandrasekhar, Shyam Pal, Jeff Shu, Christopher Ordonio, Jason Eugene Stephens, Chun Hui Low, Ming He, Prakash Periasamy, Mary Claire Silvestre, Anbu Selvam Km Mahalingam, Peter Welti, Craig Child, Granger Lobb, Ketan Shah
Publikováno v:
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).
10nm M1 local interconnect is using three-color litho-etch-litho-etch-litho-etch (LELELE) integration to enable technology scaling. This paper discusses the challenges to balance the three-color density in critical standard cell scaling, illustrates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7a2ece826e66bfdf116c6484b2c2ed5
https://doi.org/10.1109/iitc-amc.2016.7507642
https://doi.org/10.1109/iitc-amc.2016.7507642
Autor:
Craig Child, Prakash Periasamy, Ashwini Chandrasekhar, Shyam Pal, Chun Hui Low, Anbu Selvam Km Mahalingam, Ketan Shah, Christopher Ordonio, Peter Welti
Publikováno v:
2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
In advanced technology nodes, the BEOL requires advanced patterning techniques such as triple patterning (LELELE) and side wall image transfer techniques to form metal and via structures with pitches below 50nm. In this paper, we demonstrate metal cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2de681e559d4c68e72791f7ec32be1a
https://doi.org/10.1109/asmc.2016.7491157
https://doi.org/10.1109/asmc.2016.7491157
Autor:
Eswar Ramanathan, John Schaller, Mary Claire Silvestre, Anbu Selvam Km Mahalingam, Christopher Ordonio
Publikováno v:
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
In advanced nodes of 28nm and below, inline detection of a process issue inline is very challenging. Inline detection of process marginalities through Characterization Vehicle® (CV®), scribe line structures and optical scans are becoming more chall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f863a794a13c0461e07297c84cf699b
https://doi.org/10.1109/asmc.2015.7164430
https://doi.org/10.1109/asmc.2015.7164430
Autor:
Niti Garg, Anbu Selvam Km Mahalingam, Christopher Ordonio, Eswar Ramanathan, Mary Claire Silvestre, John Schaller, Siddhartha Siddhartha
Publikováno v:
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
In advanced technologies as the dimensions shrink, even the slight change in profiles can cause issues in BEOL integration. This paper discusses the effect of dielectric profile on product yield. Even though these issues were not seen on standard mon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32b4e69cefa7513756b705dc909a1363
https://doi.org/10.1109/asmc.2015.7164453
https://doi.org/10.1109/asmc.2015.7164453
Autor:
John Schaller, Lee Jong Hyup, Mary Claire Silvestre, K M Mahalingam Anbu Selvam, Zhang Galor Wenyi, Eswar Ramanathan, Patrick Justison, Christopher Ordonio, Cristiano Capasso
Publikováno v:
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Ultra Low-K films are used in advanced technologies as an interlayer dielectric in Cu processing. Due to its high porosity, it poses a lot of process challenges. This paper discusses one challenge it posed for reliability of vertical natural capacito
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7006ae1ac981c24150f0b9dfa6c42af0
https://doi.org/10.1109/asmc.2015.7164431
https://doi.org/10.1109/asmc.2015.7164431
Autor:
Cristiano Capasso, Mary Claire Silvestre, W. Y. Zhang, Kong Boon Yeap, Jian-Hsing Lee, A. Selvam, Eswar Ramanathan, Patrick Justison, Christopher Ordonio, John Schaller, Tian Shen
Publikováno v:
IRPS
Process sensitivity of IMD TDDB in a vertical natural capacitor (VNCAP) structure was evaluated in this paper. Among others, CMP slurry and wet clean chemical were found to have higher level of interaction impacting TDDB performance. This enables pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6558dc6867b94cc5d3c3c844d7113b61
https://doi.org/10.1109/irps.2015.7112819
https://doi.org/10.1109/irps.2015.7112819