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pro vyhledávání: '"Christopher Malek"'
Autor:
Christopher Malek, Dao Chuong, Patrick Fay, Bob Grabar, Nivedhita Venkatesan, Peter Chen, Jeong-Sun Moon, David Fanning, Erdem Arkun, Joel Wong, Didiel Vazquez Morales
Publikováno v:
IEEE Electron Device Letters. 42:796-799
We report 60-nm gate-length graded-channel AlGaN/GaN HEMTs fabricated with a mini-field-plate T-gate. The devices exhibit an extrinsic fT and $\text{f}_{\text {MAX}}$ of 156 GHz and 308 GHz, respectively. At 60-nm gate length, the fT*Lg of 9.4 GHz $\
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9451ea35e78d8b808f991418c35135ae
https://doi.org/10.1109/led.2021.3075926
https://doi.org/10.1109/led.2021.3075926
