Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Christopher L. Davies"'
Autor:
Christopher L. Davies, Marina R. Filip, Jay B. Patel, Timothy W. Crothers, Carla Verdi, Adam D. Wright, Rebecca L. Milot, Feliciano Giustino, Michael B. Johnston, Laura M. Herz
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-9 (2018)
Radiative bimolecular processes will dominate charge-carrier recombination in hybrid perovskite solar cells operating near the Shockley-Queisser limit. Here, the authors show that such processes are the inverse of absorption and increase as distribut
Externí odkaz:
https://doaj.org/article/f408a141d59b4f4782e4e1bd11ded0a4
Autor:
Rebecca L, Milot, Matthew T, Klug, Christopher L, Davies, Zhiping, Wang, Hans, Kraus, Henry J, Snaith, Michael B, Johnston, Laura M, Herz
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 30(44)
Optoelectronic properties are unraveled for formamidinium tin triiodide (FASnI
Autor:
Jessica L, Boland, Gözde, Tütüncüoglu, Juliane Q, Gong, Sonia, Conesa-Boj, Christopher L, Davies, Laura M, Herz, Anna, Fontcuberta I Morral, Michael B, Johnston
Publikováno v:
Nanoscale. 9(23)
Precise control over the electrical conductivity of semiconductor nanowires is a crucial prerequisite for implementation of these nanostructures into novel electronic and optoelectronic devices. Advances in our understanding of doping mechanisms in n
Autor:
Kun, Peng, Patrick, Parkinson, Jessica L, Boland, Qian, Gao, Yesaya C, Wenas, Christopher L, Davies, Ziyuan, Li, Lan, Fu, Michael B, Johnston, Hark H, Tan, Chennupati, Jagadish
Publikováno v:
Nano letters. 16(8)
Terahertz time-domain spectroscopy (THz-TDS) has emerged as a powerful tool for materials characterization and imaging. A trend toward size reduction, higher component integration, and performance improvement for advanced THz-TDS systems is of increa
Autor:
Jessica L, Boland, Alberto, Casadei, Gözde, Tütüncüoglu, Federico, Matteini, Christopher L, Davies, Fauzia, Jabeen, Hannah J, Joyce, Laura M, Herz, Anna, Fontcuberta I Morral, Michael B, Johnston
Publikováno v:
ACS nano. 10(4)
Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a noncontact method based on time-resolved terahertz photoconductivity for assessing n- and p-type doping eff
Autor:
Boland, J L, Conesa-Boj, S, Joyce, H J, Herz, L M, Fontcuberta i Morral, A, Johnston, M B, Parkinson, P, Tutuncuoglu, G, Matteini, F, Ruffer, D, Casadei, A, Amaduzzi, F, Jabeen, F, Davies, C L, Jessica L Boland, Sonia Conesa-Boj, Patrick Parkinson, Gozde Tutuncuglu, Federico Matteini, Daniel Ruffer, Alberto Casadei, Francesca Amaduzzi, Fauzia Jabeen, Christopher L Davies, Hannah J Joyce, Laura M. Herz, Anna Fontcuberta i Morral, Michael B Johnston
Publikováno v:
Nano Letters
Boland, J L, Conesa-Boj, S, Parkinson, P, Tuetuencueoglu, G, Matteini, F, Rueffer, D, Casadei, A, Amaduzzi, F, Jabeen, F, Davies, C L, Joyce, H J, Herz, L M, Fontcuberta i Morral, A & Johnston, M B 2015, ' Modulation Doping of GaAs/AlGaAs Core-Shell Nanowires With Effective Defect Passivation and High Electron Mobility ', Nano Letters, vol. 15, no. 2, pp. 1336-1342 . https://doi.org/10.1021/nl504566t, https://doi.org/10.1021/nl504566t
Boland, J L, Conesa-Boj, S, Parkinson, P, Tuetuencueoglu, G, Matteini, F, Rueffer, D, Casadei, A, Amaduzzi, F, Jabeen, F, Davies, C L, Joyce, H J, Herz, L M, Fontcuberta i Morral, A & Johnston, M B 2015, ' Modulation Doping of GaAs/AlGaAs Core-Shell Nanowires With Effective Defect Passivation and High Electron Mobility ', Nano Letters, vol. 15, no. 2, pp. 1336-1342 . https://doi.org/10.1021/nl504566t, https://doi.org/10.1021/nl504566t
Reliable doping is required to realize many devices based on semiconductor nanowires. Group IIIV nanowires show great promise as elements of high-speed optoelectronic devices, but for such applications it is important that the electron mobility is no
Autor:
Hannah J Joyce, Sarwat A Baig, Patrick Parkinson, Christopher L Davies, Jessica L Boland, H Hoe Tan, Chennupati Jagadish, Laura M Herz, Michael B Johnston
Publikováno v:
Journal of Physics D: Applied Physics; 6/7/2017, Vol. 50 Issue 22, p1-1, 1p
Publikováno v:
Semiconductor Science & Technology; Oct2016, Vol. 31 Issue 10, p1-1, 1p