Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Christopher Künneth"'
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. :2100636
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb1f08164f6a32a6553a703fb0c0569d
https://doi.org/10.1002/pssr.202100636
https://doi.org/10.1002/pssr.202100636
Publikováno v:
npj Computational Materials, Vol 4, Iss 1, Pp 1-9 (2018)
Insight into the origin of process-related properties like small-scale inhomogeneities is key for material optimization. Here, we analyze DFT calculations of randomly doped HfO2 structures with Si, La, and VO and relate them to the kind of production
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e204ef917c365ad4a987ee703c9313e
http://link.springer.com/article/10.1038/s41524-018-0133-4
http://link.springer.com/article/10.1038/s41524-018-0133-4
Autor:
Nina Balke, Rohit Batra, Ulrich Böttger, Evelyn T. Breyer, Keum Do Kim, Chris M. Fancher, Franz Fengler, Shosuke Fujii, Hiroshi Funakubo, David Griesche, Everett D. Grimley, Alexei Gruverman, Michael Hoffmann, Cheol Seong Hwang, Seung Dam Hyun, Jon F. Ihlefeld, Brienne Johnson, Jacob L. Jones, Alfred Kersch, Han Joon Kim, Christopher Künneth, Luca Larcher, James M. LeBeau, Young Hwan Lee, Shinji Migita, Thomas Mikolajick, Johannes Mueller, Halid Mulaosmanovic, Min Hyuk Park, Milan Pešić, Rampi Ramprasad, George A. Rossetti, Masumi Saitoh, Tony Schenk, Theodor Schneller, Uwe Schroeder, Shigehisa Shibayama, Takao Shimizu, Stefan Slesazeck, Sergej Starschich, Igor Stolichnov, Xuan Tian, Akira Toriumi, Lun Xu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99e44544143b5b64b934052094cefab6
https://doi.org/10.1016/b978-0-08-102430-0.09991-5
https://doi.org/10.1016/b978-0-08-102430-0.09991-5
Autor:
Hans Edwin Wagner, Christopher Künneth, Simon Kölbl, Alfred Kersch, Hans Christian Alt, Volker Häublein
Molecular-like carbon-nitrogen complexes in GaAs are investigated both experimentally and theoretically. Two characteristic high-frequency stretching modes at 1973 and 2060 cm−1, detected by Fourier transform infrared absorption (FTIR) spectroscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::16ede47220731c9d832093c9d600f1dd
https://publica.fraunhofer.de/handle/publica/256744
https://publica.fraunhofer.de/handle/publica/256744
Autor:
Christopher Künneth, Halid Mulaosmanovic, Thomas Mikolajick, Uwe Schroeder, Alfred Kersch, Stefan Slesazeck, Milan Pešić, Stefan Müller, Michael J. Hoffmann, Evelyn T. Breyer
The discovery of ferroelectric properties of binary oxides revitalized the interest in ferroelectrics and bridged the scaling gap between the state-of-the-art semiconductor technology and ferroelectric memories. However, before hitting the markets, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0b30a8bda4a127aa02e2f5fb79d609a6
http://arxiv.org/abs/1709.06983
http://arxiv.org/abs/1709.06983
Autor:
Alfred Kersch, Claudia Richter, Thomas Mikolajick, Chris M. Fancher, Min Hyuk Park, Jacob L. Jones, Uwe Schroeder, Christopher Künneth, Tony Schenk
Publikováno v:
Advanced Electronic Materials. 5:1900303
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66580491e154388d0d90ce4a57cf3f51
https://doi.org/10.1002/aelm.201900303
https://doi.org/10.1002/aelm.201900303
The ferroelectric properties of nanoscale silicon doped HfO$_2$ promise a multitude of applications ranging from ferroelectric memory to energy-related applications. The reason for the unexpected behavior has not been clearly proven and presumably in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::979e1f01e80357ee5365a02d4bf74f39
The nitrogen-vacancy (NV) center occurs in GaAs bulk crystals doped or implanted with nitrogen. The local vibration of nitrogen gives rise to a sharp infrared absorption band at 638 cm$^{-1}$, exhibiting a fine structure due to the different masses o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e785dd63fc21b5caffbfd2c4509b8e7
Autor:
Thomas Mikolajick, Milan Pešić, Halid Mulaosmanovic, Sabine Kolodinski, Stefan Flachowsky, K. Khullar, A. Kersch, Claudia Richter, R. van Bentum, J. Ocker, Ekaterina Yurchuk, Tony Schenk, Everett D. Grimley, Christopher Künneth, James M. LeBeau, Uwe Schroeder, S. Jansen, Johannes Müller, Stefan Slesazeck, P. Polakowski
Publikováno v:
ESSDERC
The discovery of ferroelectricity in HfO 2 and ZrO 2 based dielectrics enabled the introduction of these materials in highly scalable non-volatile memory devices. Typical memory cells are using a capacitor or a transistor as the storage device. These
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6722fa7ba7c8c70d519752ffa282a277
https://doi.org/10.1109/essderc.2016.7599662
https://doi.org/10.1109/essderc.2016.7599662
Publikováno v:
Journal of Applied Physics. 123:164101
III-valent dopants have shown to be most effective in stabilizing the ferroelectric, crystalline phase in atomic layer deposited, polycrystalline HfO2 thin films. On the other hand, such dopants are commonly used for tetragonal and cubic phase stabil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe5ea790088f25fd06071ecc252190d2
https://doi.org/10.1063/1.5021746
https://doi.org/10.1063/1.5021746