Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Christopher J. Funch"'
Autor:
Christopher J. Funch, Shannon W. Boettcher, Ann L. Greenaway, Alex Welsh, Shaul Aloni, Robert Weiss, Jason W. Boucher
Publikováno v:
Journal of Crystal Growth. 506:147-155
Low-cost methods of III-V deposition are an important component of making high-efficiency III-V solar cells cost-competitive for terrestrial applications. Here, we report the design and testing of a close-spaced vapor transport system for the growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::309a8408d9fc2155664f6b0c727391f5
https://doi.org/10.1016/j.jcrysgro.2018.10.031
https://doi.org/10.1016/j.jcrysgro.2018.10.031
Autor:
Jason W. Boucher, Shannon W. Boettcher, Benjamin F. Bachman, Christopher J. Funch, Shaul Aloni, Ann L. Greenaway
Publikováno v:
ACS Applied Energy Materials, vol 1, iss 2
Ga1-xInxP is a technologically important III-V ternary semiconductor widely utilized in commercial and record-efficiency solar cells. We report the growth of Ga1-xInxP by water-vapor-mediated close-spaced vapor transport. Because growth of III-V semi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5339f3adde4d6d6f52de199ebb2c5321
https://doi.org/10.1021/acsaem.7b00199
https://doi.org/10.1021/acsaem.7b00199
Autor:
Shannon W. Boettcher, Ann L. Greenaway, Jason W. Boucher, Christopher J. Funch, Sebastian Z. Oener
Publikováno v:
ACS Energy Letters. 2:2270-2282
III–V semiconductors form the most efficient single- and multijunction photovoltaics. Metal–organic vapor-phase epitaxy, which uses toxic and pyrophoric gas-phase precursors, is the primary commercial growth method for these materials. In order f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f19cba8e416e93e52414a4ec9e66573c
https://doi.org/10.1021/acsenergylett.7b00633
https://doi.org/10.1021/acsenergylett.7b00633
Autor:
James Kolodzey, Ramsey Hazbun, James Nakos, Dean Siegel, John Hart, D. L. Harame, Christopher J. Funch
Publikováno v:
ECS Transactions. 64:659-667
The Ge content in SiGe bipolar transistors (HBTs) has been steadily increasing for the past few decades in order to meet higher frequency targets. Problems exist with higher Ge content films due to the strain from the pseudomorphic growth on Si subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf20747e05ed1722621cf02a7e2d5c42
https://doi.org/10.1149/06406.0659ecst
https://doi.org/10.1149/06406.0659ecst
Autor:
V. Kaushal, James Nakos, Dean Siegel, James Kolodzey, Ramsey Hazbun, Christopher J. Funch, John Hart, David Scott Hazel
Publikováno v:
ECS Meeting Abstracts. :1805-1805
Si and SiGe epitaxy via UHVCVD requires an extremely clean and oxide free substrate but has the advantage of allowing low temperature epitaxy (LTE). In-situ bake-off of thin native oxides is possible at high temperatures, but is not an option for low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44e19799262a6fc4648f50a3dde6eda6
https://doi.org/10.1149/ma2014-02/35/1805
https://doi.org/10.1149/ma2014-02/35/1805