Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Christopher H. Don"'
Autor:
Christopher H. Don, Thomas P. Shalvey, Matthew J. Smiles, Luke Thomas, Laurie J. Phillips, Theodore D. C. Hobson, Harry Finch, Leanne A. H. Jones, Jack E. N. Swallow, Nicole Fleck, Christopher Markwell, Pardeep K. Thakur, Tien‐Lin Lee, Deepnarayan Biswas, Leon Bowen, Benjamin A. D. Williamson, David O. Scanlon, Vinod R. Dhanak, Ken Durose, Tim D. Veal, Jonathan D. Major
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 20, Pp n/a-n/a (2023)
Abstract Despite the recent success of CdS/Sb2Se3 heterojunction devices, cadmium toxicity, parasitic absorption from the relatively narrow CdS band gap (2.4 eV) and multiple reports of inter‐diffusion at the interface forming Cd(S,Se) and Sb2(S,Se
Externí odkaz:
https://doaj.org/article/2b30a75e5c3f41c0b67fe73c97d5ef51
Autor:
Theodore D C Hobson, Luke Thomas, Laurie J Phillips, Leanne A H Jones, Matthew J Smiles, Christopher H Don, Pardeep K Thakur, Vinod R Dhanak, Tim D Veal, Jonathan D Major, Ken Durose
Publikováno v:
2022 IEEE 49th Photovoltaics Specialists Conference (PVSC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1282f5fec04fe3b941b92d34c022c83c
https://doi.org/10.1109/pvsc48317.2022.9938559
https://doi.org/10.1109/pvsc48317.2022.9938559
Autor:
Thomas J. Featherstone, Pardeep K. Thakur, Vinod R. Dhanak, Jonathan D. Major, Leanne A. H. Jones, David O. Scanlon, Tien-Lin Lee, Tim D. Veal, Matthew J. Smiles, Christopher H. Don, Huw Shiel, Christopher N. Savory, Theodore D. C. Hobson, Jack E. N. Swallow, Ken Durose
Publikováno v:
Journal of Materials Chemistry C. 8:12615-12622
The presence of a lone pair of 5s electrons at the valence band maximum (VBM) of Sb2Se3 and the resulting band alignments are investigated using soft and hard X-ray photoemission spectroscopy in parallel with density functional theory (DFT) calculati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::130a4735cb409347a6031f826fb3eb19
https://doi.org/10.1039/d0tc03470c
https://doi.org/10.1039/d0tc03470c
Autor:
Theodore D C Hobson, Luke Thomas, Laurie J Phillips, Leanne A H Jones, Matthew J Smiles, Christopher H Don, Pardeep K Thakur, Huw Shiel, Stephen Campbell, Vincent Barrioz, Vin Dhanak, Tim Veal, Jonathan D Major, Ken Durose
Publikováno v:
JPhys Energy, Vol 5, Iss 4, p 045012 (2023)
We explored the in-situ doping of cadmium telluride thin films with indium to produce n-type absorbers as an alternative to the near-universal choice of p-type for photovoltaic devices. The films were grown by close space sublimation from melt-synthe
Externí odkaz:
https://doaj.org/article/0c7da6d80f7b4907a5c4c5f47b25841d