Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Christopher F. Lyons"'
Publikováno v:
SPIE Proceedings.
Early insertion of ArF nm lithography will occur at the 130 nm node in 2001. Process development for the 100 nm node will also occur this year. Both aggressive gate length reductions and minimum pitch design rules below 250 nm present immediate chall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c21ce06ce817b58c771e841ff818ef1e
https://doi.org/10.1117/12.435785
https://doi.org/10.1117/12.435785
Publikováno v:
SPIE Proceedings.
Early insertion of ArF nm lithography will occur at the 130 nm node in 2001. Process development for the 100nm node will also occur this year. Both aggressive gate length reductions and minimum pitch design rules below 250nm present immediate challen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bda57b5effe87cfd11c06c2e7b304fb6
https://doi.org/10.1117/12.425202
https://doi.org/10.1117/12.425202
Autor:
Uzodinma Okoroanyanwu, Marina V. Plat, Harry J. Levinson, Khanh B. Nguyen, Christopher Lee Pike, Scott A. Bell, Christopher F. Lyons, Khoi A. Phan, Paul L. King
Publikováno v:
SPIE Proceedings.
As lithographic technology nodes advance beyond the 193 nm generation, the optical absorption of organic materials will require the use of thin layer imaging (TLI) techniques. Of the techniques under consideration, the use of ultra-thin resist (UTR)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1148e2aa0504d03b08cb40cdb858c021
https://doi.org/10.1117/12.390068
https://doi.org/10.1117/12.390068
Publikováno v:
SPIE Proceedings.
Resolution, R, in optical lithography is often described by the Rayleigh equation: R equals k1(lambda) /NA. Since the 0.25 um generation there has been a trend of aggressive gate length reduction for high performance devices. Leading edge logic techn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::475eb945f8e575bac2d028cf00fc5a32
https://doi.org/10.1117/12.389009
https://doi.org/10.1117/12.389009
Autor:
Bhanwar Singh, Gurjeet S. Bains, Ramkumar Subramanian, Christopher F. Lyons, Ernesto Gallardo
Publikováno v:
SPIE Proceedings.
This paper describes the results of CD control studies on a dielectric layer that has both dense & isolated trenches and dense contact holes. Both top and bottom anti-reflective coatings were explored as well as the standard process without ARC. All
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::875ef4e6baa86e6831565ce609660cd4
https://doi.org/10.1117/12.310765
https://doi.org/10.1117/12.310765
Autor:
Marina V. Plat, Christopher F. Lyons, William R. Brunsvold, Randolph S. Smith, Nicholas K. Eib
Publikováno v:
SPIE Proceedings.
This study evaluates the effect of dyes, including photosensitive dyes, on resist performance such as: swing curve reduction, resist dissolution rate, resolution, dose and focus latitude, scumming, etc. The paper demonstrates good correlation between
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bb63dcee8aedc53f013a26ee6562389
https://doi.org/10.1117/12.210348
https://doi.org/10.1117/12.210348
Publikováno v:
SPIE Proceedings.
LOCOS processes use nitride layers in the range of 1000 - 2000 angstrom for oxidation barriers. The thicknesses are optimized for the stiffness needed to control the `bird's beak' and for stress which effects the subsequent gate oxide quality. We hav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2cef0f59df9ffb4e591244322d46ef3
https://doi.org/10.1117/12.210381
https://doi.org/10.1117/12.210381
Publikováno v:
SPIE Proceedings.
The combination of dyed photoresist and top antireflection (TAR) coatings was applied to I- line and deep-UV lithography on polysilicon. Optimization of the resist layer's absorption and application of the TAR process significantly improves CD contro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ed5860fd62a1a17b16cd573d4aa4eb7
https://doi.org/10.1117/12.150471
https://doi.org/10.1117/12.150471
Publikováno v:
SPIE Proceedings.
Thickness variations in photoresist caused by substrate topography, and normal variations in deposited thin films, arc unavoidable sources of linewidth variation in optical lithography. Thin film interference effects cause exposure to vary by large a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70448d540a020151f789fdf07cacc831
https://doi.org/10.1117/12.130348
https://doi.org/10.1117/12.130348
Autor:
Ann M. Uptmor, Christopher F. Lyons, Michael P. Skinner, Willard E. Conley, William R. Brunsvold, Dale M. Crockatt
Publikováno v:
Advances in Resist Technology and Processing VI.
The advantages of using polydimethylglutarimide (PMGI) as an underlayer for a "Portable Conformable Mask" (PCM) process have been demonstrated by Shipley Company and Rohm and Haas. Here we describe an optimized PMGI formulation coupled with an advanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3827cb884c5ffee192beaee10a062870
https://doi.org/10.1117/12.953041
https://doi.org/10.1117/12.953041