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Autor:
Laurel L. Grotzinger, Susan D. Thai, Carol A. Bessel, Dorothy W. Skaf, Ginger M. Denison, Walter J. Boyko, Andrew Dunbar, Donna M. Omiatek, Christopher E. Kendrex, Randy D. Weinstein, Joseph M. DeSimone
Publikováno v:
Industrial & Engineering Chemistry Research. 45:8779-8787
Chemical−mechanical planarization (CMP) is a process of oxidizing and chelating the copper overburden present in an interconnect device while mechanically polishing the surface of the wafer. Because the use of condensed CO2 as the solvent for CMP w