Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Christopher D. Yerino"'
Autor:
Baolai Liang, Minjoo Larry Lee, Meng Sun, Gregory J. Salamo, Christopher D. Yerino, Yuriy I. Mazur, Diana L. Huffaker, Paul J. Simmonds, Vitaliy G. Dorogan
Publikováno v:
ACS Nano. 7:5017-5023
Self-assembled quantum dots (SAQDs) grown under biaxial tension could enable novel devices by taking advantage of the strong band gap reduction induced by tensile strain. Tensile SAQDs with low optical transition energies could find application in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::af8a100f21090c7b41c41ad785fcd123
https://doi.org/10.1021/nn400395y
https://doi.org/10.1021/nn400395y
Autor:
Sebastian, Unsleber, Michael, Deppisch, Christian M, Krammel, Minh, Vo, Christopher D, Yerino, Paul J, Simmonds, Minjoo Larry, Lee, Paul M, Koenraad, Christian, Schneider, Sven, Höfling
Publikováno v:
Optics express. 24(20)
In this letter, we report on quantum light emission from bulk AlInAs grown on InP(111) substrates. We observe indium rich clusters in the bulk Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::6ad88625441ad6ed1ba16e4df0e99b2e
https://pubmed.ncbi.nlm.nih.gov/27828385
https://pubmed.ncbi.nlm.nih.gov/27828385
Autor:
Yun-Li Li, Christopher D. Yerino, Jung Han, Hyung Koun Cho, Kuan-Yung Liao, Qian Sun, Benjamin Leung, Bo Hyun Kong, Yu Zhang
Publikováno v:
Journal of Crystal Growth. 341:27-33
Semipolar (1122) GaN was grown on stripe etched r -plane sapphire substrate by a maskless selective growth method. The initial stage of growth is analyzed by describing the competitive nucleation mechanisms, due to the interplay between kinetics and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fed81d2bbc16b658254553ada42d265
https://doi.org/10.1016/j.jcrysgro.2011.12.035
https://doi.org/10.1016/j.jcrysgro.2011.12.035
Autor:
Y. Zhang, A. V. Markov, Alexander Y. Polyakov, In Hwan Lee, T.-S. Ko, N. B. Smirnov, A. V. Govorkov, Qian Sun, Christopher D. Yerino, Jung Han
Publikováno v:
Materials Science and Engineering: B. 166:220-224
Electrical properties, deep traps spectra and luminescence spectra were studied for two undoped a-plane GaN (a-GaN) films grown on r-plane sapphire using metalorganic chemical vapor deposition and differing by structural perfection. For sample A, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe8497dd3ac18789957a4efbb9391889
https://doi.org/10.1016/j.mseb.2009.11.030
https://doi.org/10.1016/j.mseb.2009.11.030
Autor:
Hyung Koun Cho, Soon Yong Kwon, Bo Hyun Kong, In Hwan Lee, Yu Zhang, Christopher D. Yerino, Qian Sun, Y. S. Cho, Jung Han
Publikováno v:
Journal of Crystal Growth. 311:3824-3829
This paper reports a study of the effect of NH 3 flow rate on m -plane GaN growth on m -plane SiC with an AlN buffer layer. It is found that a reduced NH 3 flow rate during m -plane GaN growth can greatly improve the recovery of in situ optical refle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::485f4eeec2d7453940ae77cfa255a4d9
https://doi.org/10.1016/j.jcrysgro.2009.06.035
https://doi.org/10.1016/j.jcrysgro.2009.06.035
Autor:
Christopher D. Yerino, Y. S. Cho, In Hwan Lee, Qian Sun, Bo Hyun Kong, Hyung Koun Cho, Tsung Shine Ko, Jung Han
Publikováno v:
Journal of Crystal Growth. 311:2948-2952
In this work, we report the growth of smooth, high-quality N-face GaN on c-plane sapphire by metalorganic chemical vapor deposition. It is found that the nitridation temperature of sapphire has a critical effect on the surface morphology of N-face Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24b0181fcb3c6fc047027c5eff118e06
https://doi.org/10.1016/j.jcrysgro.2009.01.059
https://doi.org/10.1016/j.jcrysgro.2009.01.059
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35:010801
For more than 50 years, research into III–V compound semiconductors has focused almost exclusively on materials grown on (001)-oriented substrates. In part, this is due to the relative ease with which III–Vs can be grown on (001) surfaces. Howeve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9073e09c7f2445b82a3b36357da7a833
https://doi.org/10.1116/1.4972049
https://doi.org/10.1116/1.4972049
Autor:
Jung Han, Zhen Chen, Christopher D. Yerino, Yu Zhang, Qian Sun, Benjamin Leung, Steve Lester, Yun-Li Li, Kuan-Yung Liao
Publikováno v:
CLEO:2011 - Laser Applications to Photonic Applications.
Semipolar (11–22) GaN light-emitting diodes are grown on sapphire substrates by orientation controlled epitaxy. Optical emission properties are investigated, and narrow linewidth emission is shown for devices on this low dislocation density templat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6729ea24035f22a4698823f08d08927
https://doi.org/10.1364/cleo_si.2011.cwf2
https://doi.org/10.1364/cleo_si.2011.cwf2
Publikováno v:
SPIE Proceedings.
In addition to future applications in electronics, optoelectronics, and biophotonics, synthesis of nanostructures such as nanowires, nanorods, and quantum dots offer insights regarding the governing principle of crystal growth that can be applied to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1a5b8b5620cde1e47c716d19de221ee
https://doi.org/10.1117/12.829140
https://doi.org/10.1117/12.829140
Publikováno v:
Nano letters. 7(11)
We report the growth of horizontally aligned arrays and networks of GaN nanowires (NWs) as resonant components in nanoelectromechanical systems (NEMS). A combination of top-down selective area growth (SAG) and bottom-up vapor-liquid-solid (VLS) synth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::210322c1923e40e393b0ab85bc5cf8ab
https://pubmed.ncbi.nlm.nih.gov/17941678
https://pubmed.ncbi.nlm.nih.gov/17941678