Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Christopher D. Hull"'
Autor:
Yanjie Wang, Kun-Da Chu, Stefano Pellerano, Jacques C. Rudell, Christopher D. Hull, Steven Callender
Publikováno v:
IEEE Journal of Solid-State Circuits. 56:1502-1513
This article presents the design of a dual-mode V-band power amplifier (PA) that enhances the efficiency at power back-off (PBO) using load modulation. The PA utilizes a reconfigurable two-/four-way power combiner to enable two discrete modes of oper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c611957ce905565a78b6f5df43542da2
https://doi.org/10.1109/jssc.2021.3063032
https://doi.org/10.1109/jssc.2021.3063032
Publikováno v:
IEEE Journal of Solid-State Circuits. 54:1266-1273
This paper presents the design and optimization of an $E$ -band power amplifier (PA) implemented in Intel’s 22FFL FinFET process. Layout optimization and characterization of the PA unit cell yielding optimal millimeter-wave (mmW) performance of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2e757d4cd33b43a384f457dede14e8a
https://doi.org/10.1109/jssc.2019.2899493
https://doi.org/10.1109/jssc.2019.2899493
Autor:
Peter Sagazio, Christopher D. Hull, Oner Orhan, Steven Callender, Woorim Shin, Stefano Pellerano
Publikováno v:
IEEE Communications Magazine. 56:186-192
As 5G takes advantage of the vast amount of available spectrum in the mmWave bands, system and circuit designers face new challenges to create efficient, high-performance phased array transceivers. This article covers scaled CMOS circuit and system t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d0a4abaedd9d5c4f6dbb8b4cdd5a86f
https://doi.org/10.1109/mcom.2018.1701374
https://doi.org/10.1109/mcom.2018.1701374
Autor:
Yanjie Wang, Christopher D. Hull, Stefano Pellerano, Jacques C. Rudell, Steven Callender, Kun-Da Chu
Publikováno v:
2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
This paper presents the design of a dual-mode V-band PA with efficiency enhancement at power back-off via load modulation. The design utilizes a reconfigurable 2/4-way non-uniform power combiner to enable two discrete modes of operation – full powe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbfc0c8335fc7a8740b46487077c04c2
https://doi.org/10.1109/rfic49505.2020.9218381
https://doi.org/10.1109/rfic49505.2020.9218381
Publikováno v:
IEEE Journal of Solid-State Circuits. 53:340-356
This paper presents a fully integrated wideband current-mode digital polar power amplifier (DPA) in CMOS with built-in AM–PM distortion self-compensation. Feedforward capacitors are implemented in each differential cascode digital power cell. These
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3539cf0ab323f2a5827c1911f5874221
https://doi.org/10.1109/jssc.2017.2760898
https://doi.org/10.1109/jssc.2017.2760898
Autor:
Mark Chakravorti, Arnaud Lucres Amadjikpe, Woorim Shin, Stefano Pellerano, Peter Sagazio, William J. Lambert, Steven Callender, Abhishek Agrawal, Christopher D. Hull, Divya Shree Vemparala, Yanjie Wang, Somnath Kundu, Satoshi Suzuki, Farhana Sheikh, Brent Carlton, Robert Flory
Publikováno v:
ISSCC
Fifth-generation cellular communication standards (5G) target Gb/s data-rates, pushing the industry beyond the sub-6GHz bands. Tens of GHz of spectrum are available in the frequency bands from 30 to 300GHz. To maintain acceptable link budgets with su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f71f56eec6759915ddcd6e02689c992e
https://doi.org/10.1109/isscc.2019.8662496
https://doi.org/10.1109/isscc.2019.8662496
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 64:1088-1101
A mixer-first receiver design in 28-nm CMOS is discussed. An embedded 5-bit mixer digital-to-analog converter provides wideband tuneability to enhance device matching and, hence, suppress the multiple local oscillator (LO) harmonics as well as to imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dea3ab177c4b37fce53e28fa5c1a9b3c
https://doi.org/10.1109/tmtt.2016.2532867
https://doi.org/10.1109/tmtt.2016.2532867
Publikováno v:
2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
This paper presents the design of an E-band PA in a 22nm FinFET CMOS process. The design utilizes device neutralization and low-k transformers for gain and bandwidth enhancement. A holistic design methodology is employed to further optimize PA effici
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96f1de21aff99e8c21dfd62288b65a42
https://doi.org/10.1109/rfic.2018.8428993
https://doi.org/10.1109/rfic.2018.8428993
Publikováno v:
2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
This paper presents E-band (71–76 GHz) LNA design in 22nm CMOS FinFET technology. Stacked topology with DC current re-use for 2-stage cascaded LNA results in power efficient design with high performance. Measurement shows peak gain of 20 dB and min
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15fe140cab4f0d8398d5053cd4176563
https://doi.org/10.1109/rfic.2018.8429036
https://doi.org/10.1109/rfic.2018.8429036
Publikováno v:
2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
This paper presents the design of an E-band PA in Intel 14nm FinFET/trigate CMOS process. Device layout optimizations are used to maximize device performance at mm-wave frequencies and overcome the impact of scaling on RF performance. Neutralization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e63d002fb62bf02e704e64470a2d8d62
https://doi.org/10.1109/rfic.2017.7969103
https://doi.org/10.1109/rfic.2017.7969103