Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Christopher D. English"'
Autor:
R. Dixit, Eric Pop, B. Barut, Christopher D. English, J. Nathawat, Michael Randle, Keke He, N. Arabchigavkani, Kirby K. H. Smithe, S. Yin, Jonathan P. Bird
Publikováno v:
Physical Review Materials. 4
Drift velocity saturation (at some characteristic value, ${v}_{d}^{\mathrm{sat}}$) is a critical process that limits the ultimate current-carrying capacity of semiconductors at high electric fields $(\ensuremath{\sim}{10}^{4}\phantom{\rule{0.16em}{0e
Publikováno v:
2016 74th Annual Device Research Conference (DRC).
Transistors based on atomically thin two-dimensional (2D) materials like MoS 2 have attractive properties for applications in low-power electronics. However, in practice their electrical measurements often exhibit hysteresis [1,2], masking their intr
Autor:
Saurabh V. Suryavanshi, Runjie Xu, Zuanyi Li, Kirby K. H. Smithe, Christopher D. English, Feng Xiong, Michal J. Mleczko, Sharnali Islam, Eric Pop
Publikováno v:
2015 IEEE Nanotechnology Materials and Devices Conference (NMDC).
This talk will give an overview of our recent work on two-dimensional (2D) materials and devices. Particular focus will be placed on high-field transport, device self-heating, and fundamental aspects of thermal (phonon) transport in 2D materials incl
Publikováno v:
2015 73rd Annual Device Research Conference (DRC).
Monolayer (1L) two-dimensional (2D) semiconductors such as MoS 2 have garnered attention for highly scaled optoelectronics [1,2], due to their sub-nm thickness and direct band gap. For practical applications, such films must be grown on large areas w
Publikováno v:
72nd Device Research Conference.
In this study we investigate for the first time both low-and high-field transport in few-layer MoS 2 transistors using a two-valley band structure [Fig. 1], by combining simulations and experimental data [5]. We find that taking into account both the
Autor:
Christopher D. English, Parsian K. Mohseni, Joshua D. Wood, Xiuling Li, Ashkan Behnam, Eric Pop, Joseph W. Lyding
Publikováno v:
Nano letters. 13(3)
The growth of high-density arrays of vertically oriented, single crystalline InAs NWs on graphene surfaces are realized through the van der Waals (vdW) epitaxy mechanism by metalorganic chemical vapor deposition (MOCVD). However, the growth of InGaAs