Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Christopher Collazo-Davila"'
Autor:
Radislav A. Potyrailo, Steven Go, Doug Forman, Nasr Alkadi, Majid Nayeri, Brian Joseph Scherer, Mack Craig, Calvert Christopher, Guang Wu, Philip McConnell, Xiaxi Li, Christopher Collazo-Davila, Daniel White Sexton, Richard St-Pierre, Bruce Campbell Amm, Andrei Kolmakov
Publikováno v:
Nature Electronics. 3:280-289
Semiconducting metal oxides are widely used for gas sensors. The resulting chemiresistor devices, however, suffer from non-linear responses, signal fluctuations and gas cross-sensitivities, which limits their use in demanding applications of air-qual
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fa91d9159aaa8783384f868a17d7486
https://doi.org/10.1038/s41928-020-0402-3
https://doi.org/10.1038/s41928-020-0402-3
Autor:
Christopher Collazo-Davila, Majid Nayeri, Joleyn E. Brewer, V. Srivastava, Brian Joseph Scherer, Michael A. Carpenter, Andrew Shapiro, C. Henderson, Radislav A. Potyrailo, Nora M Houlihan, V. A. Vulcano Rossi
Publikováno v:
ECS Transactions. 91:319-328
Real time determination of gases in the fuel stream of solid oxide fuel cells (SOFCs) is critical for their operation control and low operating costs. Because conventional gas sensors have gas cross-sensitivity problem, other instruments based on tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fc7e7025a602e15cae6a8a02e56cfb7
https://doi.org/10.1149/09101.0319ecst
https://doi.org/10.1149/09101.0319ecst
Autor:
David Richard Esler, Ljubisa Dragoljub Stevanovic, Greg Dunne, David Alan Lilienfeld, Stacey Kennerly, Peter Deeb, Peter Almern Losee, Christopher Collazo-Davila, James W. Kretchmer, Alexander Viktorovich Bolotnikov, Thomas Bert Gorczyca
Publikováno v:
Materials Science Forum. 858:876-879
In this paper, we show state of the art, low on-resistance, 25mW/1.2kV and 43mW/2.5kV SiC MOSFETs with excellent design robustness and process control such that the parametric spread of key device characteristics are approaching Si products. The impa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44e23cb790b39ddf0e66b443f4e60551
https://doi.org/10.4028/www.scientific.net/msf.858.876
https://doi.org/10.4028/www.scientific.net/msf.858.876