Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Christopher Boguslaw Kocon"'
Autor:
Wang Jun, Christopher Boguslaw Kocon, Jacek Korec, David Jauregui, Shuming Xu, Jonathan A. Noquil, Juan Alejandro Herbsommer, John Shen, Charles Walter Pearce, Boyi Yang, Simon John Molloy, Gary Eugene Daum, Ozzie Lopez, Haian Lin
Publikováno v:
2011 International Electron Devices Meeting.
In this paper, an integrated NexFET power module is presented to meet requirements on next-generation, high efficiency and high current density DC-DC converters for computer applications. The new power module uses an innovative stacked-die package te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3dd71bc8fb7a5efab86f04f447a6b25
https://doi.org/10.1109/iedm.2011.6131615
https://doi.org/10.1109/iedm.2011.6131615
Autor:
Steve Perelli, Haian Lin, David Jauregui, Jacek Korec, Shuming Xu, Juan Alejandro Herbsommer, Charles Walter Pearce, Keith Barry, Christopher Boguslaw Kocon, Ozzie Lopez, Gary Eugene Daum, Simon Molly
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
A new generation of Power MOSFET technology has been introduced. The devices are manufactured in a standard 0.35µm CMOS production line with only few process modules being adapted for the requirements of vertical power transistors with a 2x improvem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3952305361e92ede7c1454d19e04cba
https://doi.org/10.1109/iedm.2009.5424400
https://doi.org/10.1109/iedm.2009.5424400
Publikováno v:
2006 IEEE International Symposium on Power Semiconductor Devices & IC's.
The presented device structure offers novel features of recessed interlevel dielectric (ILD) into the active device trench and perpendicular N+ body design. This allows for the device self alignment and unit size shrink to 1mum and below without comp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8534261935cb1a0854b8090569fb0d2d
https://doi.org/10.1109/ispsd.2006.1666081
https://doi.org/10.1109/ispsd.2006.1666081