Zobrazeno 1 - 10
of 60
pro vyhledávání: '"Christopher A. Broderick"'
Publikováno v:
Physics and Simulation of Optoelectronic Devices XXXI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a05f6cea6fe42e5526ec02bb3789744f
https://doi.org/10.1117/12.2648228
https://doi.org/10.1117/12.2648228
Autor:
Christopher A. Broderick
The band gap of germanium (Ge) is “weakly” indirect, with the L6c conduction band (CB) minimum lying only ≈150meV below the zone-center Γ7c CB edge in energy. This has stimulated significant interest in engineering the band structure of Ge, wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f374540f3ce21c187bc944fcc5392d9c
https://hdl.handle.net/10468/13774
https://hdl.handle.net/10468/13774
Publikováno v:
Physical Review Applied. 17
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::192b1ceeb1aeb70c92c6b04edd043c60
https://doi.org/10.1103/physrevapplied.17.014029
https://doi.org/10.1103/physrevapplied.17.014029
Autor:
Stephen J. Sweeney, Zoe C. M. Davidson, Judy M Rorison, Kerstin Volz, Christopher A. Broderick, Thilo Hepp
Publikováno v:
2021 27th International Semiconductor Laser Conference (ISLC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a7e0190994cc0e0a4811149b7fc0e87
https://doi.org/10.1109/islc51662.2021.9615882
https://doi.org/10.1109/islc51662.2021.9615882
Publikováno v:
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).
Highly-mismatched alloys constitute a promising approach to extend the operational range of GaAs-based quantum well (QW) lasers to telecom wavelengths. This is challenging using type-I QWs due to the difficulty to incorporate sufficient N or Bi via e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e38888402c6587559af6a27987db0f4b
https://doi.org/10.1109/nusod52207.2021.9541434
https://doi.org/10.1109/nusod52207.2021.9541434
Publikováno v:
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).
Solving the multi-band k•p Schrodinger equation for a quantum-confined heterostructure using a reciprocal space plane wave approach presents several advantages compared to conventional real space approaches such as the finite difference or element
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9113b1a73474d4ca43a704a6a45e719
https://doi.org/10.1109/nusod52207.2021.9541479
https://doi.org/10.1109/nusod52207.2021.9541479
Autor:
Alexei Chelnokov, Donguk Nam, Dan Buca, Wei Du, Christopher A. Broderick, Jeremy Witzens, Oussama Moutanabbir, Shui-Qing Yu, Xiao Gong, Simone Assali, Bahareh Marzban, Eoin P. O'Reilly
Publikováno v:
Applied physics letters 118(11), 110502-(2021). doi:10.1063/5.0043511
(Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device-quality epi-layers and quantum-engineered heterostructures has meant that tunable all-group IV Si-integrated infrared photonics is now a real
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e26b0a6f45d3c1b4334fa53dda463dbb
Autor:
Giorgio Gravina, Maksym Myronov, Eoin P. O'Reilly, E Vitiello, Andrea Balocchi, Xavier Marie, Christopher A. Broderick, Simone Rossi, Fabio Pezzoli
Publikováno v:
Physical Review Applied. 14
We present a magneto-optical study of the carrier dynamics in compressively strained ${\mathrm{Ge}}_{1\ensuremath{-}x}{\mathrm{Sn}}_{x}$ films with $\mathrm{Sn}$ content up to 10% epitaxially grown on $\mathrm{Ge}$ on $\mathrm{Si}$(001) virtual subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbab813c96131175b9ef66497648254b
https://doi.org/10.1103/physrevapplied.14.064068
https://doi.org/10.1103/physrevapplied.14.064068
Autor:
Christopher A. Broderick
Publikováno v:
2020 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).
Conventional diamond-structured silicon (Si) and germanium (Ge) possess indirect fundamental band gaps, limiting their potential for applications in light-emitting devices. However, $\mathrm{Si}_{x}\mathrm{Ge}_{1-x}$ alloys grown in the lonsdaleite (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66b06c8ef8b83b506f6e7a714cb85da4
https://doi.org/10.1109/nusod49422.2020.9217637
https://doi.org/10.1109/nusod49422.2020.9217637
Publikováno v:
2020 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).
The emergence of a direct band gap in $\mathrm{Ge}_{1-x}\mathrm{Sn}_{x}$ alloys has stimulated interest in developing $\mathrm{Ge}_{1-x}\mathrm{Sn}_{x}$ alloys and nanostructures for applications in Si-compatible electronic and photonic devices. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45ae9f0a178c99f7eacf180c324a253e
https://doi.org/10.1109/nusod49422.2020.9217765
https://doi.org/10.1109/nusod49422.2020.9217765