Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Christophe Starck"'
Publikováno v:
Microelectronics Reliability. 43:1751-1754
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a793104396d488b1fe0c8d2eed3d04a
https://doi.org/10.1016/s0026-2714(03)00292-0
https://doi.org/10.1016/s0026-2714(03)00292-0
Autor:
Manuel Avella, G. Gelly, M. Bettiati, Christophe Starck, J. Jiménez, M. Pommiès, Bernard Pierre Orsal, N. Broqua, I. Asaad, J.M. Peransin
Publikováno v:
Materials Science and Engineering: B. :486-490
High temperature (140 °C) and high current density (17 kA cm − 2 ) aging tests have been applied to InGaAs/AlGaAs 980 nm single-mode pump lasers. The use of low reflectivity ( 1%, AR) coatings on both facets leads to a symmetrical cavity configura
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26d3692c8d57dc1fe55affd9d1c0d221
https://doi.org/10.1016/s0921-5107(01)01012-1
https://doi.org/10.1016/s0921-5107(01)01012-1
Autor:
C. Fortin, Antonina Plais, E. Derouin, Christophe Starck, J. Bonnet-Gamard, D. Carpentier, Joel Jacquet, N. Bouche, Leon Goldstein, Fabienne Gaborit, J.C. Remy, Francois Brillouet, Paul Salet, J. Boucart
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 5:520-529
We present and give details about the conception and realization of the first monolithic long wavelength vertical-cavity surface-emitting laser (VCSEL) operating continuous wave at room temperature. This approach relies on two originalities: a metamo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dc99b8f1870467512e644b26070dd6a
https://doi.org/10.1109/2944.788414
https://doi.org/10.1109/2944.788414
Autor:
Ph. Pagnod-Rossiaux, L. Roux, Christophe Starck, N. Tscherptner, B. Fernier, Fabienne Gaborit
Publikováno v:
Journal of Crystal Growth. :948-954
We report on an experimental investigation of the temperature sensitivity of (Ga)InAsP compressively strained multi-quantum well (MQW) 1.3 μm broad area lasers with respect to the amount of strain and barrier band gap. The composition of wells are a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8f7a3181ab753ce47c0388e1144ee7e
https://doi.org/10.1016/s0022-0248(96)00953-0
https://doi.org/10.1016/s0022-0248(96)00953-0
Publikováno v:
Journal of Applied Physics. 77:1977-1984
A zero‐net strained GaInAsP/InP(001) multilayer grown by gas source molecular beam epitaxy exhibits large interfacial undulations and an orthorhombic modulated distortion, which are attributed to elastic relaxation of tensile layers. It is examined
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e3ee026abece93d42687c77cf0140be
https://doi.org/10.1063/1.358833
https://doi.org/10.1063/1.358833
Publikováno v:
Journal of Applied Physics. 74:3778-3782
Compressive GaInAsP multiple quantum wells (MQW) grown by gas source molecular‐beam epitaxy present altered structural and optical characteristics when tensile GaInAsP barriers are used instead of lattice‐matched ones. An alternate tensile/compre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51ba7202d65b569c0e5cbf42930a48d1
https://doi.org/10.1063/1.354469
https://doi.org/10.1063/1.354469
Publikováno v:
Journal of Applied Physics. 74:4149-4152
This article discusses a low‐temperature photoluminescence (PL) and electroabsorption (EA) study of GaxIn1−xAs/Ga0.22In0.78As0.48P0.52 single quantum well (QW) samples prepared by gas‐source molecular beam epitaxy. The linewidth of PL emitted f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::118bb3d9651218fc426ab65d70078c9f
https://doi.org/10.1063/1.354417
https://doi.org/10.1063/1.354417
Publikováno v:
Journal of Crystal Growth. 127:241-245
Compressive and tensile strained GaInAsP layers as well as zero-net strain multiple quantum wells, grown by gas source molecular beam epitaxy, have been investigated. Reflection high energy electron diffraction patterns show two-dimensional growth fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afcefbe28cdf288d8fd35e8412ca42f9
https://doi.org/10.1016/0022-0248(93)90613-2
https://doi.org/10.1016/0022-0248(93)90613-2
Autor:
Jean-Yves Emery, Leon Goldstein, M. Lambert, Fabienne Gaborit, Dominique Bonnevie, Francis Poingt, Christophe Starck
Publikováno v:
Journal of Crystal Growth. 120:157-161
Different structures for optoelectronic devices have been grown by gas source molecular beam epitaxy. Strained layer multiquantum well structures with quarternary wells exhibit low threshold current density (Jth=510 A/cm2) and high T0 value (90 K). A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11f994dafa7278043e889aaa5b35e255
https://doi.org/10.1016/0022-0248(92)90382-s
https://doi.org/10.1016/0022-0248(92)90382-s
Publikováno v:
Journal of Crystal Growth. 120:180-183
Quantum well structures and separate confinement heterostructure lasers based on strained quaternary Ga 1− x In x As 1− y P y well material were grown by gas source molecular beam epitaxy. The substitution of As for P allows a simultaneous contro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e76244e191fb1e570fd3d4f3661b422
https://doi.org/10.1016/0022-0248(92)90387-x
https://doi.org/10.1016/0022-0248(92)90387-x