Zobrazeno 1 - 10
of 101
pro vyhledávání: '"Christophe Inguimbert"'
Autor:
Damien Lambert, Julien Parize, Nicolas Richard, Mélanie Raine, Olivier Duhamel, Claude Marcandella, Arthur Losquin, Anne Hemeryck, Christophe Inguimbert, Philippe Paillet
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, In press, pp.1-1. ⟨10.1109/TNS.2023.3265463⟩
IEEE Transactions on Nuclear Science, In press, pp.1-1. ⟨10.1109/TNS.2023.3265463⟩
International audience; The displacement damage cross-section of the neutron-GaN interaction is calculated in the energy range from meV to GeV. Different calculation methods are used and discussed to estimate the modeling uncertainty. The Non-ionizin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::99f495c52c2c1ecfecb833761ac3ac57
https://hal.laas.fr/hal-04074966/document
https://hal.laas.fr/hal-04074966/document
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2021, 68 (8), pp.1607-1612. ⟨10.1109/TNS.2021.3082573⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2021, 68 (8), pp.1607-1612. ⟨10.1109/TNS.2021.3082573⟩
The contribution of Coulomb processes induced by incident electrons in single event upset (SEU) sensitivity is investigated. The case of 65-nm silicon on insulator (SOI) memory is studied. Several orbits (GPS, Jupiter Icy Moons Explorer’s (JUICE’
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d32a501b5a5c71eefc972cc42f1e9986
https://doi.org/10.1109/tns.2021.3082573
https://doi.org/10.1109/tns.2021.3082573
Autor:
Inès Massiot, S. Parola, R. Rey, Guilhem Almuneau, Sophie Duzellier, Claude Pons, F. Olivie, T. Nuns, Maxime Levillayer, Alexandre Arnoult, Laurent Artola, Corinne Aicardi, T. Le Cocq, Christophe Inguimbert, R. Monflier
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, 2021, 68 (8), pp.1694-1700. ⟨10.1109/TNS.2021.3068044⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2021, 68 (8), pp.1694-1700. ⟨10.1109/TNS.2021.3068044⟩
IEEE Transactions on Nuclear Science, 2021, 68 (8), pp.1694-1700. ⟨10.1109/TNS.2021.3068044⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2021, 68 (8), pp.1694-1700. ⟨10.1109/TNS.2021.3068044⟩
International audience; The degradation of InGaAsN pin subcell under 1 MeV electrons irradiation was studied by characterizing solar cells and dilute nitride bulk layers before and after irradiation. Cells are measured to retain more than 94 % of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0983f759c6fe5f21468903baf0bb40d9
https://doi.org/10.1109/tns.2021.3068044
https://doi.org/10.1109/tns.2021.3068044
Publikováno v:
Applied Surface Science
Applied Surface Science, Elsevier, 2022, 576 Part A, pp.151813. ⟨10.1016/j.apsusc.2021.151813⟩
Applied Surface Science, 2022, 576 Part A, pp.151813. ⟨10.1016/j.apsusc.2021.151813⟩
Applied Surface Science, Elsevier, 2022, 576 Part A, pp.151813. ⟨10.1016/j.apsusc.2021.151813⟩
Applied Surface Science, 2022, 576 Part A, pp.151813. ⟨10.1016/j.apsusc.2021.151813⟩
International audience; An analytical formula for the ionizing dose of low energy electrons is proposed. The expressions have been validated for 11 monatomic elements (C, Be, Al, Si, Ti, Ni, Cu, Ge, Ag, Fe and W) and for energies ranging from ∼ 10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::53383d4e70bc5f6c3690b8643a5b59e5
https://hal.archives-ouvertes.fr/hal-03479282
https://hal.archives-ouvertes.fr/hal-03479282
Publikováno v:
Applied Surface Science
Applied Surface Science, 2021, 570, pp.151154. ⟨10.1016/j.apsusc.2021.151154⟩
Applied Surface Science, Elsevier, 2021, 570, pp.151154. ⟨10.1016/j.apsusc.2021.151154⟩
Applied Surface Science, 2021, 570, pp.151154. ⟨10.1016/j.apsusc.2021.151154⟩
Applied Surface Science, Elsevier, 2021, 570, pp.151154. ⟨10.1016/j.apsusc.2021.151154⟩
International audience; The "extrapolated range" of electrons is a very practical physical parameter widely used in many applications. The commonly used analytical expressions are given classically for energies down to ~1 keV. Low energy Monte Carlo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::75c1f13a71fbea00d5962142f3ac8dca
https://hal.science/hal-03346074/file/DPHY21090.1630489396_postprint.pdf
https://hal.science/hal-03346074/file/DPHY21090.1630489396_postprint.pdf
Autor:
Christophe Inguimbert, Andrea Balocchi, Maxime Levillayer, S. Parola, Jean Decobert, Guilhem Almuneau, Alexandre Arnoult, Nicolas Vaissiere, T. Nuns, Corinne Aicardi, Sophie Duzellier, Ines Massiot, Laurent Artola, Hélène Carrère
Publikováno v:
IEEE Journal of Photovoltaics
IEEE Journal of Photovoltaics, 2021, 11 (5), pp.1271-1277. ⟨10.1109/JPHOTOV.2021.3093048⟩
IEEE Journal of Photovoltaics, IEEE, 2021, 11 (5), pp.1271-1277. ⟨10.1109/JPHOTOV.2021.3093048⟩
IEEE Journal of Photovoltaics, 2021, 11 (5), pp.1271-1277. ⟨10.1109/JPHOTOV.2021.3093048⟩
IEEE Journal of Photovoltaics, IEEE, 2021, 11 (5), pp.1271-1277. ⟨10.1109/JPHOTOV.2021.3093048⟩
International audience; In this article, we investigate the molecular beam epitaxy growth of unannealed 1.12 eV InGaAsN solar cells. The impact of the growth temperature, the As/III ratio and the bismuth used as a surfactant is reported. An in-situ c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1fda5c5ef52e48d577e89552b6a95f0a
https://hal.laas.fr/hal-03330314/document
https://hal.laas.fr/hal-03330314/document
Autor:
Angélica Sicard, Quentin Gibaru, Nicolas Balcon, Robert Ecoffet, P. Caron, Christophe Inguimbert
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2021, 68 (8), pp.1754-1763. ⟨10.1109/TNS.2020.3045200⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2021, 68 (8), pp.1754-1763. ⟨10.1109/TNS.2020.3045200⟩
International audience; The contribution of low-energy particles down to ~200 eV to the dose deposited on the very near surface of materials subject to the space environment is investigated by means of GEANT4 Monte Carlo simulations. The contribution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::78eb46e864e34a2cc4054bf533de5872
https://hal.archives-ouvertes.fr/hal-03248105/file/DPHY21060_postprint.pdf
https://hal.archives-ouvertes.fr/hal-03248105/file/DPHY21060_postprint.pdf
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2021, 490, pp.7-17. ⟨10.1016/j.nimb.2021.01.002⟩
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2021, 490, pp.7-17. ⟨10.1016/j.nimb.2021.01.002⟩
International audience; Non Ionizing Energy Loss (NIEL) is the metric conventionally used to scale displacement damage degradation of irradiated semiconductor materials. Degradation of many electrical parameters is scaled according to this average pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e9f9ed20409ffc27e1e7522307fe7da8
https://hal.archives-ouvertes.fr/hal-03330948/document
https://hal.archives-ouvertes.fr/hal-03330948/document
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2021, 68 (8), pp.1701-1711. ⟨10.1109/TNS.2021.3074369⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2021, 68 (8), pp.1701-1711. ⟨10.1109/TNS.2021.3074369⟩
International audience; A simulation chain, composed of GEANT4 and a Kinetic Monte Carlo algorithm, dedicated to study the annealing process of defects produced after energetic particle irradiation is presented. Results will be used to compute Dark C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b157b8f17e2d5655a8bc7ef27c882baa
https://hal.archives-ouvertes.fr/hal-03348968
https://hal.archives-ouvertes.fr/hal-03348968
Autor:
Maxime Levillayer, Sophie Duzellier, Thierry Nuns, Christophe Inguimbert, Tifenn Lecocq, Inès Massiot, Alexandre Arnoult, Corinne Aircadi, Parola, S., Guilhem Almuneau, Laurent Artola
Publikováno v:
RADECS 2020
RADECS 2020, Oct 2020, Virtual, France
HAL
RADECS 2020, Oct 2020, Virtual, France
HAL
International audience; Degradation of InGaAsN pinsubcell under 1MeV electron irradiation was studied by characterizing solar cells and dilute nitride bulklayers before and after irradiation. The measurements show that these cells retain more than 94
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::8be85bcfe1ce6fffff9bdd80dc95d5b4
https://hal.laas.fr/hal-03012157/document
https://hal.laas.fr/hal-03012157/document