V-Shaped InAs/Al0.5Ga0.5Sb Vertical Tunnel FET on GaAs (001) Substrate With I $_{\text {ON}}=\text {433}\,\,\mu$ A. $\mu$ m $^{-\text {1}}$ at V $_{\text {DS}}= \text {0.5}$ V

Autor: Vinay Kumar Chinni, Mohammed Zaknoune, Christophe Coinon, Laurence Morgenroth, David Troadec, Xavier Wallart, Ludovic Desplanque

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 5, Iss 1, Pp 53-58 (2017)

We report on the fabrication of a near broken InAs/Al0.5Ga0.5Sb vertical TUNNEL field effect transistor (TFET). The epitaxial structure is grown on a GaAs (001) substrate thanks to large mismatch accommodation at the GaSb/GaAs interface. The fabricat

Externí odkaz: https://doaj.org/article/598af2ec20ee4785acb712283807732a

V-Shaped InAs/Al0.5Ga0.5Sb Vertical Tunnel FET on GaAs (001) Substrate With I $_{\text {ON}}=\text {433}\,\,\mu$ A. $\mu$ m $^{-\text {1}}$ at V $_{\text {DS}}= \text {0.5}$ V

Autor: Xavier Wallart, Mohammed Zaknoune, David Troadec, Laurence Morgenroth, Christophe Coinon, V.K. Chinni, Ludovic Desplanque

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 5, Iss 1, Pp 53-58 (2017)

We report on the fabrication of a near broken InAs/Al0.5Ga0.5Sb vertical TUNNEL field effect transistor (TFET). The epitaxial structure is grown on a GaAs (001) substrate thanks to large mismatch accommodation at the GaSb/GaAs interface. The fabricat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c053c3e056ef9389c9b026d14137fd0e
https://ieeexplore.ieee.org/document/7752805/

Chemical nature of the anion antisite in dilute phosphide GaAs1−xPx alloy grown at low temperature

Autor: J. P. Nys, Ph. Ebert, David Troadec, Xavier Wallart, Didier Stiévenard, Marc Veillerot, Bruno Grandidier, J.F. Lampin, Thomas Demonchaux, Gilles Patriarche, I. Lefebvre, K. K. Sossoe, M. M. Dzagli, H. J. von Bardeleben, M. A. Mohou, A. Addad, M. Schnedler, Christophe Coinon, Maxime Berthe

Publikováno v: Physical Review Materials. 2

While nonstoichiometric binary III-V compounds are known to contain group-V antisites, the growth of ternary alloys consisting of two group-V elements might give additional degrees of freedom in the chemical nature of these antisites. Using cross-sec

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bc97f0518b78850c8755fed965533552
https://doi.org/10.1103/physrevmaterials.2.104601

Single channel l00 Gbit/s link in the 300 GHz band

Autor: Pascal Szriftgiser, Christophe Coinon, Guillaume Ducournau, Xavier Wallart, Klaus M. Engenhardt, Mohammed Zaknoune, J-F. Lampin, P. Latzel, Malek Zegaoui, V.K. Chinni, Emilien Peytavit

Publikováno v: 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).

We report on the achievement of single channel 100 Gbit/s transmission, using linear resonant cavity enhanced unitravelling carrier photodiodes and QAM-16 modulation format. The indoor wireless link has been validated for up to 100 Gbit/s and 280 GHz

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d3f3381efc20ca492e566099be83eb87
https://doi.org/10.1109/irmmw-thz.2018.8510070

Ultra-thin InGaAs-MSM photodetectors for THz optoelectronics applications

Autor: M. Billet, Emilien Peytavit, G. Ducoumau, J-F. Lampin, Christophe Coinon, Y. Desmet, Xavier Wallart

Publikováno v: 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Aug 2017, Cancun, Mexico. pp.17259249, ⟨10.1109/IRMMW-THz.2017.8067020⟩

International audience; We present a new design of InGaAs metal-semiconductor-metal (InGaAs-MSM) photodetectors placed in optical resonant cavities in order to reduce inter-electrode spacing while keeping a high photoresponse. Its static and dynamic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0f98555ed85c281ca54cb53d714bd3c
https://doi.org/10.1109/irmmw-thz.2017.8067020