Výsledky vyhledávání - "Christophe Coinon"

Akademický článek

V-Shaped InAs/Al0.5Ga0.5Sb Vertical Tunnel FET on GaAs (001) Substrate With I $_{\text {ON}}=\text {433}\,\,\mu$ A. $\mu$ m $^{-\text {1}}$ at V $_{\text {DS}}= \text {0.5}$ V

Autor: Vinay Kumar Chinni, Mohammed Zaknoune, Christophe Coinon, Laurence Morgenroth, David Troadec, Xavier Wallart, Ludovic Desplanque

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 5, Iss 1, Pp 53-58 (2017)

We report on the fabrication of a near broken InAs/Al0.5Ga0.5Sb vertical TUNNEL field effect transistor (TFET). The epitaxial structure is grown on a GaAs (001) substrate thanks to large mismatch accommodation at the GaSb/GaAs interface. The fabricat

Externí odkaz: https://doaj.org/article/598af2ec20ee4785acb712283807732a

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Low-temperature-grown gallium arsenide photoconductors with subpicosecond carrier lifetime and photoresponse reaching 25 mA/W under 1550 nm CW excitation

Autor: Jean-Francois Lampin, Charbel Tannoury, M. Billet, Emilien Peytavit, Christophe Coinon

Publikováno v: Electronics Letters
Electronics Letters, IET, 2020, 56, pp.897-899. ⟨10.1049/el.2020.1116⟩
Electronics Letters, 2020, 56, pp.897-899. ⟨10.1049/el.2020.1116⟩

International audience; The authors show in this Letter that photoconductors based on GaAs grown at low temperatures can exhibit photoresponses as high as 25 mA/W under continuous-wave 1550-nm-wavelength illumination. It is achieved by using an optic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a25a6ff8cbedae1af1fba9749fc19284
https://hal.archives-ouvertes.fr/hal-02997766

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V-Shaped InAs/Al0.5Ga0.5Sb Vertical Tunnel FET on GaAs (001) Substrate With I $_{\text {ON}}=\text {433}\,\,\mu$ A. $\mu$ m $^{-\text {1}}$ at V $_{\text {DS}}= \text {0.5}$ V

Autor: Xavier Wallart, Mohammed Zaknoune, David Troadec, Laurence Morgenroth, Christophe Coinon, V.K. Chinni, Ludovic Desplanque

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 5, Iss 1, Pp 53-58 (2017)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c053c3e056ef9389c9b026d14137fd0e
https://ieeexplore.ieee.org/document/7752805/

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Hole localization energy of 1.18 eV in GaSb quantum dots embedded in GaP

Autor: Xavier Wallart, Christophe Coinon, Pierre Ruterana, Yi Wang, Leo Bonato, Ludovic Desplanque, Dieter Bimberg, Ismail Firat Arikan

Publikováno v: physica status solidi (b). 253:1877-1881

Self-organized GaSb quantum dots are embedded in GaP by molecular beam epitaxy and n+p-diodes are fabricated. The structure of the sample is investigated using transmission electron microscopy with atomic resolution. The presence of quantum dots on t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7a1ddcf47742e54d88baa0215481df45
https://doi.org/10.1002/pssb.201600274

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Chemical nature of the anion antisite in dilute phosphide GaAs1−xPx alloy grown at low temperature

Autor: J. P. Nys, Ph. Ebert, David Troadec, Xavier Wallart, Didier Stiévenard, Marc Veillerot, Bruno Grandidier, J.F. Lampin, Thomas Demonchaux, Gilles Patriarche, I. Lefebvre, K. K. Sossoe, M. M. Dzagli, H. J. von Bardeleben, M. A. Mohou, A. Addad, M. Schnedler, Christophe Coinon, Maxime Berthe

Publikováno v: Physical Review Materials. 2

While nonstoichiometric binary III-V compounds are known to contain group-V antisites, the growth of ternary alloys consisting of two group-V elements might give additional degrees of freedom in the chemical nature of these antisites. Using cross-sec

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bc97f0518b78850c8755fed965533552
https://doi.org/10.1103/physrevmaterials.2.104601

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Resonant Cavity Enhanced InAIAs / InGaAs- Msmphotodetectors with 3 dB-cut off Frequency above 100 GHz

Autor: Christophe Coinon, Guillaume Ducournau, Emilien Peytavit, Jean-Francois Lampin, Sara Bretin, M. Billet, Yann Desmet, Xavier Wallart

Publikováno v: 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).

We present a resonant cavity enhanced (RCE) InAIAs/lnGaAs metal-semiconductor-metal (InAIAs/lnGaAs MSM) photodetector driven by a 1550 nm wavelength illumination. The device shows a high dc-photoresponse higher than 0.1 A/W and a cut-off frequency hi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8b17b3a97222d96a3e46108d30e4f4b1
https://doi.org/10.1109/irmmw-thz.2018.8510063

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Single channel l00 Gbit/s link in the 300 GHz band

Autor: Pascal Szriftgiser, Christophe Coinon, Guillaume Ducournau, Xavier Wallart, Klaus M. Engenhardt, Mohammed Zaknoune, J-F. Lampin, P. Latzel, Malek Zegaoui, V.K. Chinni, Emilien Peytavit

Publikováno v: 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).

We report on the achievement of single channel 100 Gbit/s transmission, using linear resonant cavity enhanced unitravelling carrier photodiodes and QAM-16 modulation format. The indoor wireless link has been validated for up to 100 Gbit/s and 280 GHz

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d3f3381efc20ca492e566099be83eb87
https://doi.org/10.1109/irmmw-thz.2018.8510070

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Indoor 100 Gbit/s THz data link in the 300 GHz band using fast photodiodes

Autor: Pascal Szriftgiser, Christophe Coinon, Mohammed Zaknoune, Guillaume Ducournau, M. Zezaoui, E. Pevtavit, V.K. Chinni, Xavier Wallart, J.F. Larnpin

Publikováno v: 25th International Conference on Telecommunications (ICT)
25th International Conference on Telecommunications (ICT), Jun 2018, Saint Malo, France. pp.288-290, ⟨10.1109/ICT.2018.8464945⟩
ICT

International audience; This paper presents recent achievements towards 100 Gbit/s data links for future 300 GHz communication systems with the new IEEE 802.15.3d standard. Resonant photodiodes structures, and their application for QAM-16 data links

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70dc5501b21d3fcc9700dc51106199e8
https://hal.archives-ouvertes.fr/hal-03286177

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Nonstoichiometric Low-Temperature Grown GaAs Nanowires

Autor: Federico Matteini, Christophe Coinon, Gözde Tütüncüoglu, Jean-Francois Lampin, Anna Fontcuberta i Morral, Philipp Ebert, Heidi Potts, Tao Xu, Rafal E. Dunin-Borkowski, Thomas Demonchaux, Maxime Berthe, Bruno Grandidier, David Troadec, Gilles Patriarche, Adrian Díaz Álvarez, J. P. Nys

Publikováno v: Nano Letters. 15:6440-6445

The structural and electronic properties of nonstoichiometric low-temperature grown GaAs nanowire shells have been investigated with scanning tunneling microscopy and spectroscopy, pump-probe reflectivity, and cathodoluminescence measurements. The gr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f433c6f4e31fd19636352c97a7a805a
https://doi.org/10.1021/acs.nanolett.5b01802

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Ultra-thin InGaAs-MSM photodetectors for THz optoelectronics applications

Autor: M. Billet, Emilien Peytavit, G. Ducoumau, J-F. Lampin, Christophe Coinon, Y. Desmet, Xavier Wallart

Publikováno v: 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Aug 2017, Cancun, Mexico. pp.17259249, ⟨10.1109/IRMMW-THz.2017.8067020⟩

International audience; We present a new design of InGaAs metal-semiconductor-metal (InGaAs-MSM) photodetectors placed in optical resonant cavities in order to reduce inter-electrode spacing while keeping a high photoresponse. Its static and dynamic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0f98555ed85c281ca54cb53d714bd3c
https://doi.org/10.1109/irmmw-thz.2017.8067020

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