Výsledky vyhledávání - "Christoph Weuffen"

Determination of heteroepitaxial layer relaxation at growth temperature from room temperature X-ray reciprocal space maps

Autor: V. Klinger, Tobias Roesener, David Lackner, Christoph Weuffen, Frank Dimroth

Publikováno v: Journal of Crystal Growth. 368:21-28

Lattice-mismatched heteroepitaxial growth in compound semiconductor layer structures, e.g. metamorphic buffers, is frequently used to combine materials with favorable properties. A detailed understanding of the strain relaxation during growth is impo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::831de7c73570ac321366a8d5be5ac122
https://doi.org/10.1016/j.jcrysgro.2013.01.007

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Comparison of direct growth and wafer bonding for the fabrication of GaInP/GaAs dual-junction solar cells on silicon

Autor: Wolfgang Jäger, Kerstin Volz, Tobias Roesener, Gerald Siefer, A. Wekkeli, Christoph Weuffen, Frank Dimroth, E. Oliva, Andreas W. Bett, Thomas Hannappel, Stephanie Essig, D. Häussler

Two different process technologies were investigated for the fabrication of high-efficiency GaInP/GaAs dual-junction solar cells on silicon: direct epitaxial growth and layer transfer combined with semiconductor wafer bonding. The intention of this r

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::88a9cc623d655008ca90bc1ccab26161
https://publica.fraunhofer.de/handle/publica/236434

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