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pro vyhledávání: '"Christoph Steinbrüchel"'
Autor:
Christoph Steinbrüchel
Publikováno v:
Scientometrics. 118:305-320
A new citation index $$h_{\mathrm{PI}}$$ for principal investigators (PIs) is defined in analogy to Hirsch’s index h, but based on renormalized citations of a PI’s papers. To this end, the authors of a paper are divided into two groups: PIs and n
Publikováno v:
Journal of Electronic Materials. 30:345-348
The present status of work on diffussion barriers for copper in multilevel interconnects is surveyed briefly, with particular emphasis on TiN and TaN, and silicon dioxide as the interlayer dielectric. New results are presented for these materials, co
Autor:
Christoph Steinbrüchel, Sarah E. Kim
Publikováno v:
Solid-State Electronics. 43:1019-1023
Fluorinated silicon oxide (FSG) films with varying fluorine (F) content were prepared by plasma-enhanced chemical vapor deposition (PECVD) using TEOS, O2, and either C2F6 or NF3. Metal films (Al, Cu–1% Al, Cu) were deposited on the FSG either direc
Publikováno v:
Journal of The Electrochemical Society. 143:1974-1977
This paper investigates the fine-line patterning of the vapor deposited polymer parylene-n, as a candidate material for a low dielectric constant interlayer dielectric in multilevel metallization. Etch rates have been determined in plasmas of both pu