Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structures

Autor: Linus Krieg, Florian Meierhofer, Sascha Gorny, Stefan Leis, Daniel Splith, Zhipeng Zhang, Holger von Wenckstern, Marius Grundmann, Xiaoxue Wang, Jana Hartmann, Christoph Margenfeld, Irene Manglano Clavero, Adrian Avramescu, Tilman Schimpke, Dominik Scholz, Hans-Jürgen Lugauer, Martin Strassburg, Jörgen Jungclaus, Steffen Bornemann, Hendrik Spende, Andreas Waag, Karen K. Gleason, Tobias Voss

Publikováno v: Nature Communications, Vol 11, Iss 1, Pp 1-10 (2020)

Though integrating functional organic materials with semiconductor nanostructures is attractive for 3D chip processing, realizing these hybrids remains a challenge. Here, the authors report an oxidative chemical vapor deposition-based process for des

Externí odkaz: https://doaj.org/article/418ca726380048dab4148970fc1b5206

Transferable Substrateless GaN LED Chips Produced by Femtosecond Laser Lift-Off for Flexible Sensor Applications

Autor: Nursidik Yulianto, Steffen Bornemann, Lars Daul, Christoph Margenfeld, Irene Manglano Clavero, Nurhalis Majid, Ludger Koenders, Winfried Daum, Andreas Waag, Hutomo Suryo Wasisto

Publikováno v: Proceedings, Vol 2, Iss 13, p 891 (2018)

Transferable substrate-less InGaN/GaN light-emitting diode (LED) chips have successfully been fabricated in a laser lift-off (LLO) process employing high power ultrashort laser pulses with a wavelength of 520 nm. The irradiation of the sample was con

Externí odkaz: https://doaj.org/article/3f4a9dbb62744260970495299bd75bfb

A Combination of Ion Implantation and High‐Temperature Annealing: Donor–Acceptor Pairs in Carbon‐Implanted AlN

Autor: Lukas Peters, Hendrik Spende, Stefan Wolter, Christoph Margenfeld, Carsten Ronning, Tobias Voss, Andreas Waag

Publikováno v: physica status solidi (a).

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fcbbca693eca8816a25bb3a3aded8ee3
https://doi.org/10.1002/pssa.202200809

Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structures

Autor: Steffen Bornemann, Christoph Margenfeld, Adrian Stefan Avramescu, Tobias Voss, Marius Grundmann, Jörgen Jungclaus, Zhipeng Zhang, Florian Meierhofer, Irene Manglano Clavero, Andreas Waag, Dominik Scholz, Hendrik Spende, Daniel Splith, Karen K. Gleason, Hans-Jürgen Lugauer, Holger von Wenckstern, Tilman Schimpke, Martin Strassburg, Linus Krieg, Jana Hartmann, Xiaoxue Wang, Stefan Leis, Sascha Gorny

Publikováno v: Nature Communications, Vol 11, Iss 1, Pp 1-10 (2020)
Nature communications, 11, Article number: 5092 (2020), DOI 10.1038/s41467-020-18914-7--Nat Commun--https://www.nature.com/ncomms/--http://www.bibliothek.uni-regensburg.de/ezeit/?2553671--2041-1723--2041-1723
Nature Communications

The combination of inorganic semiconductors with organic thin films promises new strategies for the realization of complex hybrid optoelectronic devices. Oxidative chemical vapor deposition (oCVD) of conductive polymers offers a flexible and scalable

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f1e4a3f8f011451ae38710b138ea89a3
http://link.springer.com/article/10.1038/s41467-020-18914-7

A Combination of Ion Implantation and High‐Temperature Annealing: The Origin of the 265 nm Absorption in AlN

Autor: Lukas Peters, Christoph Margenfeld, Jan Krügener, Carsten Ronning, Andreas Waag

Publikováno v: Physica status solidi : A, Applied research (2022), online first
Physica status solidi : A, Applied research

The commonly observed absorption around 265 nm in AlN is hampering the outcoupling efficiency of light-emitting diodes (LEDs) emitting in the UV-C regime. Carbon impurities in the nitrogen sublattice (CN) of AlN are believed to be the origin of this

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f581ce7a53912b79aef35766b5579525
https://doi.org/10.1002/pssa.202200485