Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Christoph Janowitz"'
Autor:
Christoph Janowitz, Ali Mahmoodinezhad, Małgorzata Kot, Carlos Morales, Franziska Naumann, Paul Plate, Marvin Hartwig Zoellner, Florian Bärwolf, David Stolarek, Christian Wenger, Karsten Henkel, Jan Ingo Flege
Publikováno v:
Dalton Transactions. 51:9291-9301
The electronic band alignment of an alumina/zinc oxide thin-film heterostructure solely grown by atomic layer deposition has been determined by XPS/UPS depth profiling, correlating the electronic properties with the interface chemical composition.
Autor:
Franziska Naumann, Karsten Henkel, Jan Ingo Flege, Robert Meyer, Małgorzata Kot, Paul Plate, Marvin Hartwig Zoellner, Ali Mahmoodinezhad, Christoph Janowitz, Christian Wenger, Carlos Morales
Publikováno v:
Journal of Vacuum Science & Technology A. 39:062406
Indium oxide (InxOy) thin films were deposited by plasma-enhanced atomic layer deposition (PEALD) using trimethylindium and oxygen plasma in a low-temperature range of 80–200 °C. The optical properties, chemical composition, crystallographic struc
Autor:
Christoph Janowitz, Dieter Schmeißer
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 411:53-56
We report on a resonant photoemission (resPES) study of PbxBi2−xSr2−yLayCan−1CunO2n+4+δ (BISCO) single crystals to unravel the resonant decay mechanisms at the Cu2p absorption edge. The resPES studies on superconducting BISCO are performed at
Autor:
Mansour, Mohamed, Matthias M, May, Michael, Kanis, Mario, Brützam, Reinhard, Uecker, Roel, van de Krol, Christoph, Janowitz, Mattia, Mulazzi
Publikováno v:
RSC advances. 9(27)
We experimentally investigated the electronic structure of Mo-doped BiVO
This chapter discusses tin oxide (SnO2), a material which belongs to the transparent conducting oxide family and is best characterized by its high conductivity, high carrier mobility, and the ability to form p-type conductivity. We correlate these pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f028b2b61a6a00140dd523acdb061770
https://doi.org/10.1016/b978-0-08-102096-8.00016-1
https://doi.org/10.1016/b978-0-08-102096-8.00016-1
Autor:
Christoph Janowitz, Mario Brützam, Matthias M. May, Roel van de Krol, Mansour Mohamed, Michael Kanis, Reinhard Uecker, Mattia Mulazzi
We experimentally investigated the electronic structure of Mo doped BiVO4 high quality single crystals with synchrotron radiation excited angle resolved photoelectron spectroscopy ARPES . By photon energy dependent ARPES, we measured the bulk derived
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f746a004ab1b2e8a037eefdaa650f2af
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=99382
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=99382
Publikováno v:
Applied Surface Science. 366:397-403
The electronic structure of the ternary layered transition metal dichalcogenide compounds of ZrS x Se 2− x , where 0 ≤ x ≤ 2, has been studied by means of high resolution angle-resolved photoemission spectroscopy (ARPES) used in conjunction wit
Autor:
Christoph Janowitz, Hassan Gargouri, Jan Ingo Flege, Ali Mahmoodinezhad, Franziska Naumann, Karsten Henkel, Paul Plate, Dieter Schmeißer
Publikováno v:
Journal of Vacuum Science & Technology A. 38:022404
Gallium oxide (Ga2O3) thin films were deposited by plasma-enhanced atomic layer deposition (PEALD) applying a capacitively coupled plasma source where trimethylgallium (TMGa) as the gallium precursor and oxygen (O2) plasma were used in a substrate te
Autor:
Christoph Janowitz, Jan Ingo Flege, Bernd Gruska, Hassan Gargouri, Johanna Reck, Karsten Henkel, Franziska Naumann, Ali Mahmoodinezhad, Adrian Blümich
Publikováno v:
Journal of Vacuum Science & Technology B. 38:014014
In situ real-time ellipsometry (irtE) with a very high time resolution of 24 ms was applied to monitor the inductively coupled plasma enhanced atomic layer deposition (ALD) process of Al2O3 thin films to precisely resolve each step of the ALD process
Publikováno v:
Physical Review B. 97
We present an experimental and theoretical study of the electronic structure of the transparent conductive oxide semiconductor ${\mathrm{MgGa}}_{2}{\mathrm{O}}_{4}$. Its valence band and the core levels have been measured experimentally by angle-reso