Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Christoph Flötgen"'
Publikováno v:
ECS Transactions. 98:81-85
Surfaces of (001) p-type silicon substrates were bombarded with either Ar or Kr ions prior to direct wafer bonding using an EVG© ComBond© high-vacuum wafer-bonding system.1 Previously, we showed that this ion bombardment treatment induces a thin ~n
Autor:
Bernhard Rebhan, Viorel Dragoi, Thomas Plach, Christoph Flötgen, Kurt Hingerl, Markus Wimplinger, Nasser Razek
Publikováno v:
Surface and Interface Science. :57-137
This chapter introduces three different wafer bonding techniques that currently show high potential for micro electro mechanical systems (MEMS) applications. Within the new landscape of semiconductor industry, some wafer bonding processes that were f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::806d6064b4c7ec7a1f2825dfd68c73be
https://doi.org/10.1016/b978-0-12-817786-0.00027-x
https://doi.org/10.1016/b978-0-12-817786-0.00027-x
Autor:
Timo Aalto, Veli-Matti Airaksinen, Stephan Gerhard Albert, Giorgio Allegato, Marco Amiotti, Olli Anttila, Juergen Auersperg, Antonio Bonucci, Indranil Ronnie Bose, Tanja Braun, Mikael Broas, J. Burggraf, Christopher Cameron, Rob N. Candler, Zhen Cao, André Cardoso, Kuo-Shen Chen, Andrea Conte, Adriana Cozma, Cristina E. Davis, Sophia Dempwolf, Pradeep Dixit, Michael Dost, Viorel Dragoi, Simo Eränen, Bruno Fain, B. Figeys, Andreas C. Fischer, Christoph Flötgen, Sami Franssila, Alois Friedberger, Marc Fueldner, Maria Ganchenkova, Pilar Gonzalez, Miguel A. Gosálvez, Michael Grimes, Atte Haapalinna, Paul Hagelin, Paul Hammond, Kimmo Henttinen, Vesa Henttonen, David Horsley, Takeo Hoshi, Satoshi Itoh, Henrik Jakobsen, R. Jansen, Kerstin Jonsson, Dirk Kähler, Harindra Kumar Kannojia, Hannu Kattelus, Gudrun Kissinger, Roy Knechtel, Kathrin Knese, Kai Kolari, Mika Koskenvuori, Heikki Kuisma, Amit Kulkarni, Franz Laermer, Christof Landesberger, Christina Leinenbach, Michael K. LeVasseur, Jue Li, Yuyuan Lin, Paul F. Lindner, K. Lodewijks, Fabian Lofink, Giorgio Longoni, Sebastian Markus Luber, M. Mahmud-ul-hasan, Jari Mäkinen, Matti Mäntysalo, Devin Martin, Federico Maspero, Toni T. Mattila, Luca Mauri, Peter Merz, Doug Meyer, Marco Moraja, Teruaki Motooka, Gerhard Müller, Paul Muralt, Risto M. Nieminen, Frank Niklaus, Laura Oggioni, Juuso Olkkonen, Elmeri Österlund, Kuang-Shun Ou, Jari Paloheimo, Toni P. Pasanen, Mervi Paulasto-Kröckel, Thomas Plach, Jean-Philippe Polizzi, Klaus Pressel, Matti Putkonen, Riikka L. Puurunen, Wolfgang Reinert, Enea Rizzi, V. Rochus, Glenn Ross, X. Rottenberg, Lauri Sainiemi, Hele Savin, Harald Schenk, Marc Schikowski, Matthias Schulze, S. Seema, S. Severi, Lasse Skogström, Tadatomo Suga, Scott Sullivan, Tommi Suni, Horst Theuss, Markku Tilli, H.A.C. Tilmans, Ilkka Tittonen, Hannah Tofteberg, Pekka Törmä, Santeri Tuomikoski, Frode Tyholdt, Tsuyoshi Uda, Örjan Vallin, Carlo Valzasina, Timo Veijola, Eeva Viinikka, Dietmar Vogel, Andreas Vogl, Vesa Vuorinen, W.J. Westervelde, Sebastian Wicht, Robert Wieland, Bernhard Winkler, Levent Yobas, Luca Zanotti, I. Zubel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16f0bddf47c3d8c3eaa0f0359a359b22
https://doi.org/10.1016/b978-0-12-817786-0.00065-7
https://doi.org/10.1016/b978-0-12-817786-0.00065-7
Autor:
Christoph Flötgen, R. Lang, Joerg Schwar, Felix Predan, Michael Schachtner, Bruno Boizot, David Lackner, Jonas Schön, Frank Dimroth, Jereemie Lefevre, Birte-Julia Godejohann
Publikováno v:
2019 European Space Power Conference (ESPC).
Electric orbit raising increases the radiation dose for space solar arrays significantly. This leads to the need for a more radiation resistant, highly efficient space solar cell. We propose a new wafer-bonded 4-junction structure which allows reachi
Aluminum–aluminum wafer bonding is becoming increasingly important in the production of CMOS microelectromechanical systems. So far, successful bonding has required extreme processing temperatures of 450 °C or more, because the chemically highly s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::502c2502e4a02ca0f7a00e6d8651f9d5
https://epub.jku.at/doi/10.1007/s00542-017-3520-8
https://epub.jku.at/doi/10.1007/s00542-017-3520-8
Publikováno v:
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).
A new technology was developed allowing for room temperature covalent bonding. The surface preparation method allows for in situ native oxides removal and fabrication of oxide-free bonded interfaces which could be directly used in fabrication of vari
Publikováno v:
ECS Transactions. 64:103-110
Compound semiconductor integration techniques draw ever more attention with increasing demands for high efficiency power electronics, photovoltaic or photonic devices. Aside from methods including epitaxial growth, one of these techniques is direct w
Publikováno v:
Microsystem Technologies. 20:653-662
Wafer-level Cu-Sn intermetallic bonding is an interesting process for advanced applications in the area of MEMS and 3D interconnects. The existence of two intermetallic phases for Cu-Sn system makes the wafer bonding process challenging. The impact o
Publikováno v:
ECS Meeting Abstracts. :947-947
While direct wafer-bonding can be used for device fabrication, it can also be used as a pathway for characterizing and understanding the properties of interfaces across bonded materials. In this work, an ion-bombardment process with varying ion energ