Zobrazeno 1 - 10
of 319
pro vyhledávání: '"Christoph E. Nebel"'
Autor:
Christoph E. Nebel
Publikováno v:
Functional Diamond, Vol 3, Iss 1 (2023)
In the future, electronic parts will penetrate everything, generating a new and fast-growing pollution problem. Future devices therefore need to be environmentally friendly with strong recycling options. A paradigm change in semiconductor technology
Externí odkaz:
https://doaj.org/article/dbafadcf70914cd9b2147f27961cbb33
Autor:
Thomas Gerrer, Heiko Czap, Thomas Maier, Fouad Benkhelifa, Stefan Müller, Christoph E. Nebel, Patrick Waltereit, Rüdiger Quay, Volker Cimalla
Publikováno v:
AIP Advances, Vol 10, Iss 2, Pp 029902-029902-1 (2020)
Externí odkaz:
https://doaj.org/article/17d1b5109df1495ebfe00b4aced97f6d
Autor:
Thomas Gerrer, Heiko Czap, Thomas Maier, Fouad Benkhelifa, Stefan Müller, Christoph E. Nebel, Patrick Waltereit, Rüdiger Quay, Volker Cimalla
Publikováno v:
AIP Advances, Vol 9, Iss 12, Pp 125106-125106-6 (2019)
The integration of AlGaN/GaN thin film transistors onto diamond substrates enables the efficient dissipation of device heat, thus providing a boost in performance and reliability of current high-frequency GaN power amplifiers. In this paper, we show
Externí odkaz:
https://doaj.org/article/24370baaa4bf47c49da142c32ef0da46
Autor:
Christoph Schreyvogel, Vladimir Polyakov, Sina Burk, Helmut Fedder, Andrej Denisenko, Felipe Fávaro de Oliveira, Ralf Wunderlich, Jan Meijer, Verena Zuerbig, Jörg Wrachtrup, Christoph E. Nebel
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 7, Iss 1, Pp 1727-1735 (2016)
In this paper, we demonstrate an active and fast control of the charge state and hence of the optical and electronic properties of single and near-surface nitrogen-vacancy centres (NV centres) in diamond. This active manipulation is achieved by using
Externí odkaz:
https://doaj.org/article/1adf8613292c44d39fc4d15ae5b4776c
Autor:
Katja Beha, Helmut Fedder, Marco Wolfer, Merle C. Becker, Petr Siyushev, Mohammad Jamali, Anton Batalov, Christopher Hinz, Jakob Hees, Lutz Kirste, Harald Obloh, Etienne Gheeraert, Boris Naydenov, Ingmar Jakobi, Florian Dolde, Sébastien Pezzagna, Daniel Twittchen, Matthew Markham, Daniel Dregely, Harald Giessen, Jan Meijer, Fedor Jelezko, Christoph E. Nebel, Rudolf Bratschitsch, Alfred Leitenstorfer, Jörg Wrachtrup
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 3, Iss 1, Pp 895-908 (2012)
We demonstrate the coupling of single color centers in diamond to plasmonic and dielectric photonic structures to realize novel nanophotonic devices. Nanometer spatial control in the creation of single color centers in diamond is achieved by implanta
Externí odkaz:
https://doaj.org/article/5ce5983b1e4f468fa1ddb4cd4b1b35b9
Autor:
Taro Yoshikawa, Markus Reusch, Verena Zuerbig, Volker Cimalla, Kee-Han Lee, Magdalena Kurzyp, Jean-Charles Arnault, Christoph E. Nebel, Oliver Ambacher, Vadim Lebedev
Publikováno v:
Nanomaterials, Vol 6, Iss 11, p 217 (2016)
Electrostatic self-assembly of diamond nanoparticles (DNPs) onto substrate surfaces (so-called nanodiamond seeding) is a notable technique, enabling chemical vapor deposition (CVD) of nanocrystalline diamond thin films on non-diamond substrates. In t
Externí odkaz:
https://doaj.org/article/198f92c7f61e41949cdcd55dc0ad0209
Publikováno v:
Carbon. 182:711-714
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::889e856e50b472171012060ba15473f0
https://doi.org/10.1016/j.carbon.2021.06.063
https://doi.org/10.1016/j.carbon.2021.06.063
Autor:
Satoshi Yamasaki, Takao Inokuma, Christoph E. Nebel, Norio Tokuda, Tsubasa Matsumoto, Xufang Zhang
Publikováno v:
Journal of Materials Research. 36:4688-4702
This article reviews the state of the art in inversion-type p-channel diamond MOSFETs. We successfully developed the world’s first inversion-channel homoepitaxial and heteroepitaxial diamond MOSFETs. We investigated the dependence of phosphorus con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bad309ca23d9d5c57bd8557ecf09b92
https://doi.org/10.1557/s43578-021-00317-z
https://doi.org/10.1557/s43578-021-00317-z
Autor:
Takao Inokuma, Hitoshi Noguchi, Satoshi Yamasaki, Tsubasa Matsumoto, Hiromitsu Kato, Xufang Zhang, Christoph E. Nebel, Masahiko Ogura, Toshiharu Makino, Daisuke Takeuchi, Yuta Nakano, Norio Tokuda
Publikováno v:
Carbon. 175:615-619
We successfully fabricated the inversion-type p-channel metal–oxide–semiconductor field-effect transistor (MOSFET) on heteroepitaxially grown free-standing diamond using silicon-based substrates. The drain current–drain voltage (Ids–Vds) and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::733533cafdf7f297e605332a1e7be47e
https://doi.org/10.1016/j.carbon.2020.11.072
https://doi.org/10.1016/j.carbon.2020.11.072
Publikováno v:
Physical Review B. 104
Microwave pulse sequences are the basis of coherent manipulation of the electronic spin ground state in nitrogen vacancy (NV) centers. In this work we demonstrate stimulated Raman transitions (SRTs) and stimulated Raman adiabatic passage (STIRAP), tw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88ed04799e5de67fad07e91815208022
https://doi.org/10.1103/physrevb.104.035201
https://doi.org/10.1103/physrevb.104.035201