Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Christoph Dolainsky"'
Evaluation of Truly Passive Crossbar Memory Arrays on Short Flow Characterization Vehicle Test Chips
Autor:
Christoph Dolainsky, Dennis Ciplickas, Tomasz Brozek, Rakesh Vallishayee, Christopher Hess, Khim Hong Ng, Hendrik Schneider, Meindert Lunenborg, Larg Weiland, Yuan Yu
Publikováno v:
2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS).
More and more non volatile memory bit cell candidates are emerging which can be implemented between two metal layers in the BEOL process. Thus, short flow Characterization Vehicle® (CV®) Test Chips become beneficial for fast yield and endurance lea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5780c8c3dbd4aa82f1c59edf5c890228
https://doi.org/10.1109/icmts.2019.8730984
https://doi.org/10.1109/icmts.2019.8730984
Autor:
Stefano Tonello, S. Minehane, Sharad Saxena, Christoph Dolainsky, Angelo Rossoni, H. Karbasi, P. McNamara, Christopher Hess, M. Quarantelli, S. Lucherini
Publikováno v:
IEEE Transactions on Electron Devices. 55:131-144
Variation in transistor characteristics is increasing as CMOS transistors are scaled to nanometer feature sizes. This increase in transistor variability poses a serious challenge to the cost-effective utilization of scaled technologies. Meeting this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2492d1eb59eb03f42332d71eab27f25
https://doi.org/10.1109/ted.2007.911351
https://doi.org/10.1109/ted.2007.911351
Autor:
Rakesh Vallishayee, Bob Yu, Meindert Lunenborg, Sharad Saxena, Cheng Jianjun, Christoph Dolainsky, Dennis Ciplickas
Publikováno v:
2013 IEEE International Electron Devices Meeting.
New technologies and integration schemes introduced over the last few generations have increased the sensitivity of transistor performance and variation to its layout and environment. This paper describes an infrastructure for efficient statistical c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::051f5ad0767d97a0a85bc8b4f5d507b5
https://doi.org/10.1109/iedm.2013.6724646
https://doi.org/10.1109/iedm.2013.6724646
Publikováno v:
The Journal of Chemical Physics. 98:1712-1720
The effect of motions which are slow on the NMR time scale (in particular, lateral diffusion) on the 31P‐NMR transverse relaxation behavior of POPC (1‐palmitoyl‐2‐oleoyl‐sn‐glycero‐3‐phosphocholine) phospholipid membranes was studied
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b96d69b226ab9afce73b7ac989172068
https://doi.org/10.1063/1.464286
https://doi.org/10.1063/1.464286
Autor:
Stefan Jank, Vlad Temchenko, Paul G Karakatsanis, Ramana Veerasingam, Rakesh Vallishayee, Christoph Dolainsky, Xiaojing Yang, Bong-Ryoul Choi, Youval Nehmadi, Moshe Poyastro
Publikováno v:
2006 IEEE International Symposium on Semiconductor Manufacturing.
Deploying OPC that is robust over the process window is becoming more and more challenging as geometries shrinki ii. This challenge has a major impact in time-to-market and yield of new products. This paper describes a litho simulator calibration flo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56a01e026546abbce896b8fd6d594b4a
https://doi.org/10.1109/issm.2006.4493134
https://doi.org/10.1109/issm.2006.4493134
Publikováno v:
SPIE Proceedings.
We present a new method of sidelobe suppressor placement based on fast lithographic simulation. Experimental results of printing 0.18 micron contact holes using a 5.5 percent transmittance attenuated phase shift mask with different settings of partia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2da6580e8cead933dbc2f44d88b6f724
https://doi.org/10.1117/12.388952
https://doi.org/10.1117/12.388952
Publikováno v:
SPIE Proceedings.
The reduction of the wave length in the optical lithography in combination with mask enhancement techniques like phase shift pattern, optical proximity correction (OPC) or off- axis illumination requires a rapid increase in measurement accuracy and c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f93189a814d3416fb47f9b15510a6170
https://doi.org/10.1117/12.377100
https://doi.org/10.1117/12.377100
Publikováno v:
SPIE Proceedings.
The paper describes the extension of optical proximity correction (OPC), which is well established for conventional chromium-on-glass mask printing, to alternating phase shift masks (altPSM). Aerial image simulation of various situations of light-fie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ce4ef86e36497fdb06fbb53bdf3edb7
https://doi.org/10.1117/12.354367
https://doi.org/10.1117/12.354367
Publikováno v:
SPIE Proceedings.
The pattern transfer process from the chip layout data to the structures on the finished wafer consists of many process steps. Although desired, none of these steps is linear in all aspects of the pattern transfer. Approaching the process limits due
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c59ca21c51099f1da1c0b8778917d1c3
https://doi.org/10.1117/12.310754
https://doi.org/10.1117/12.310754
Autor:
Wilhelm Maurer, Christoph Dolainsky
Publikováno v:
SPIE Proceedings.
The implementation of a simple, semi-empirical resist model into an OPC algorithm, which up to now uses aerial image simulation, is described. The model assumes that the main component of proximity effects comes from the aerial image. It uses two pat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59a4e61facdc04f2a6ff76c99068b366
https://doi.org/10.1117/12.275995
https://doi.org/10.1117/12.275995