Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Christoforus Bimo"'
Publikováno v:
Key Engineering Materials. 709:19-22
In this paper, we present a model of gate tunneling current in cylindrical surrounding-gate MOSFETs through dual layer high-k dielectric/SiO2 stacks. The model was derived under a quantum perturbation theory by taking into account both structural and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::931800ea59882b1ba9c53871b0da2af3
https://doi.org/10.4028/www.scientific.net/kem.709.19
https://doi.org/10.4028/www.scientific.net/kem.709.19
Publikováno v:
Advanced Materials Research. 896:371-374
Tunneling current in an armchair graphene nanoribbon (AGNR) tunnel field-effect transistor (TFET) was modeled. A linear equation was employed in describing a potential distribution within the AGNR due to its simplicity. A parabolic dispersion and an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c221fd079c971e4041366f69bb1c34fe
https://doi.org/10.4028/www.scientific.net/amr.896.371
https://doi.org/10.4028/www.scientific.net/amr.896.371
Publikováno v:
Microelectronic Engineering. 216:111086
We present a compact model of the gate tunneling current in cylindrical surrounding-gate (SG) metal-oxide-semiconductor field-effect transistors (MOSFETs) based on quantum mechanical correction. The model is physics-based and is given in an analytica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7574d57c46721f4d6e61ddd9f00a432
https://doi.org/10.1016/j.mee.2019.111086
https://doi.org/10.1016/j.mee.2019.111086
Publikováno v:
Journal of Physics: Conference Series. 739:012025
Quantum effects have been incorporated in the analytic potential model for cylindrical surrounding-gate or gate-all-around metal oxide semiconductor field effect transistors (MOSFETs). By extracting some constants parameter from the self-consistent S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00372c0bfc94a5a3236263922b79df40
https://doi.org/10.1088/1742-6596/739/1/012025
https://doi.org/10.1088/1742-6596/739/1/012025