Zobrazeno 1 - 10
of 55
pro vyhledávání: '"Christine M. Maziar"'
Publikováno v:
IEEE Transactions on Electron Devices. 46:1290-1294
Experimental results for the MOS electron and hole accumulation layer mobilities (/spl mu//sub acc/), measured for a wide range of doping concentrations (1/spl times/10/sup 16/ cm/sup -3/-4/spl times/10/sup 17/ cm/sup -3/) and at temperatures ranging
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::098c1ebaa007169a1702483c43f6234c
https://doi.org/10.1109/16.766900
https://doi.org/10.1109/16.766900
Autor:
Al F. Tasch, M. Manassian, Christine M. Maziar, Haihong Wang, G. Chindalore, S. Jallepalli, S.A. Hareland, W.-K. Shih
Publikováno v:
IEEE Transactions on Electron Devices. 45:1487-1493
In this paper, models appropriate for device simulators are developed which account for the quantum mechanical nature of accumulated regions. Accumulation layer quantization is important in deep submicron (/spl les/0.25 /spl mu/m) MOS devices in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d71e30bd40b45e2976fd878561352116
https://doi.org/10.1109/16.701479
https://doi.org/10.1109/16.701479
Autor:
Christine M. Maziar, Al F. Tasch, Everett X. Wang, Srinivas Jallepalli, Francisco A. Leon, Wei-Kai Shih
Publikováno v:
Solid-State Electronics. 42:997-1006
For the first time, the tunneling current in silicon nMOS structures with ultra-thin gate oxides has been studied both by numerically solving Schrodinger's equation and by using the WKB approximation, which explicitly includes the size quantization e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f94f4bf36a98acdedab244fd5457674b
https://doi.org/10.1016/s0038-1101(98)00097-5
https://doi.org/10.1016/s0038-1101(98)00097-5
Autor:
R. Zaman, Mahbub Rashed, Srinivas Jallepalli, Wei-Kai Shih, Christine M. Maziar, Thomas J. T. Kwan
Publikováno v:
VLSI Design, Vol 6, Iss 1-4, Pp 213-216 (1998)
Electron transport in pseudomorphically-grown silicon on relaxed (001) Si1-xGex is investigated using a Monte Carlo (MC) simulation tool. The study includes both electron transport in bulk materials and in nMOS structures. The bulk MC simulator is ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::688a4590f7d8ff9cff6b8c52cf39073a
https://doi.org/10.1155/1998/45289
https://doi.org/10.1155/1998/45289
Autor:
Mark Peskin, Christine M. Maziar
Publikováno v:
VLSI Design, Vol 8, Iss 1-4, Pp 35-40 (1998)
We present MOMENTS, a newly developed software library lbr Monte Carlo simulation of semiconductor devices. This library uses object-oriented design principles to provide a flexible, extensible toolset that allows rapid development of a wide variety
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::963744c6fb93e157ef835d346f443998
https://doi.org/10.1155/1998/18794
https://doi.org/10.1155/1998/18794
Autor:
Al F. Tasch, W.-K. Shih, Christine M. Maziar, G. Chindalore, S.A. Hareland, S. Jallepalli, Haihong Wang
Publikováno v:
IEEE Transactions on Electron Devices. 45:179-186
As MOS devices have been successfully scaled to smaller feature sizes, thinner gate oxides and higher levels of channel doping have been used in order to simultaneously satisfy the need for high drive currents and minimal short-channel effects. With
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e35b8122e8e0079c6dc77e4f9e59fe8
https://doi.org/10.1109/16.658828
https://doi.org/10.1109/16.658828
Publikováno v:
VLSI Design, Vol 8, Iss 1-4, Pp 429-435 (1998)
Non-local electron transport in nMOSFET inversion layers has been studied by Monte Carlo (MC) simulations. Inversion layer quantization has been explicitly included in the calculation of density of states and scattering rate for low-energy electrons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::703e2ea911eca9a09e01e6c9b1932c95
https://doaj.org/article/00f31ac82d484d5b9bb37e331df3c7b1
https://doaj.org/article/00f31ac82d484d5b9bb37e331df3c7b1
Publikováno v:
VLSI Design, Vol 8, Iss 1-4, Pp 423-428 (1998)
A quantum mechanical treatment of electron inversion layers is incorporated in the hydrodynamic (HD) transport model used in UT-MiniMOS. A physically based, yet computationally efficient, three-subband model is implemented in the HD simulation tool.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ae76c99ea3d258b196fd898d8a2e6bbc
https://doaj.org/article/cda1a54a5b534c0d81a4ca0bfcbbbeb5
https://doaj.org/article/cda1a54a5b534c0d81a4ca0bfcbbbeb5
Publikováno v:
Journal of Applied Physics. 81:2250-2255
Hole transport in bulk silicon is explored using an efficient and accurate Monte Carlo (MC) tool based on the local pseudopotential band structure. Acoustic and optical phonon scattering, ionized impurity scattering, and impact ionization are the dom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63cd1376af34c3537e5f5edbd0d8731b
https://doi.org/10.1063/1.364287
https://doi.org/10.1063/1.364287
Publikováno v:
IEEE Transactions on Electron Devices. 44:297-303
A first-principles approach to inversion layer quantization, valid for arbitrarily complex band structures, has been developed. This has allowed, for the first time, hole quantization and its effects on p-MOSFET device characteristics to be studied.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3ed6e1cf858e25252db7ebec0721f80
https://doi.org/10.1109/16.557719
https://doi.org/10.1109/16.557719