Výsledky vyhledávání - "Christine E. Murabito"

Comparison of SEM and HRTEM CD Measurements Extracted From Test Structures Having Feature Linewidths From 40 to 240 nm

Autor: Richard A. Allen, Michael W. Cresswell, A. Hunt, Christine E. Murabito, William F. Guthrie, Ronald G. Dixson

Publikováno v: IEEE Transactions on Instrumentation and Measurement. 57:100-109

Critical dimension (CD) measurements have been extracted from SEM and high-resolution transmission electron microscopy (HRTEM) images of the same set of monocrystalline silicon features having linewidths between 40 and 240 nm. The silicon features ar

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7bbd8816fc89b542c37c3abc8cc1df75
https://doi.org/10.1109/tim.2007.908313

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RM 8111: Development of a Prototype Linewidth Standard

Autor: Richard A. Allen, William F. Guthrie, Ronald G. Dixson, Martinez De Pinillos Jv, Michael W. Cresswell, Christine E. Murabito

Publikováno v: Journal of Research of the National Institute of Standards and Technology

Staffs of the Semiconductor Electronics Division, the Information Technology Laboratory, and the Precision Engineering Laboratory at NIST, have developed a new generation of prototype Single-Crystal CD (Critical Dimension) Reference (SCCDRM) Material

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f976aac2e873ae634a287c2435a3fd7
http://europepmc.org/articles/PMC4659447

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Test structures for referencing electrical linewidth measurements to silicon lattice parameters using HRTEM

Autor: T.J. Headley, Loren W. Linholm, Christine E. Murabito, E.H. Bogardus, Michael W. Cresswell, B.A. am Ende, William F. Guthrie, R.A. Allen, C.H. Ellenwood

Publikováno v: IEEE Transactions on Semiconductor Manufacturing. 16:239-248

A technique has been developed to determine the linewidths of the features of a prototype reference material for the calibration of critical-dimension (CD) metrology instruments. The reference features are fabricated in mono-crystalline-silicon with

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7e65a0f0ba04dcc1dc41a7ac6d9a669a
https://doi.org/10.1109/tsm.2003.812163

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Electrical linewidth test structures patterned in [100] silicon-on-insulator for use as CD standards

Autor: Michael W. Cresswell, S.C. Everist, J.E. Bonevich, Christine E. Murabito, Loren W. Linholm, L.A. Giannuzzi, P.J. Shea, N.M.P. Guillaume, R.A. Allen

Publikováno v: IEEE Transactions on Semiconductor Manufacturing. 14:356-364

Electrical test structures known as cross-bridge resistors have been patterned in [100] epitaxial silicon material that was grown on Bonded and Etched-back Silicon-On-Insulator (BESOI) substrates. The critical dimensions (CDs) of a selection of their

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f4293298314eaa4a1a3fe7aa67a0c211
https://doi.org/10.1109/66.964322

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Process optimization for lattice-selective wet etching of crystalline silicon structures

Autor: Michael W. Cresswell, Richard A. Allen, Ndubuisi G. Orji, Ronald G. Dixson, Christine E. Murabito, William F. Guthrie

Publikováno v: Journal of Micro/Nanolithography, MEMS, and MOEMS. 15:014503

Lattice-selective etching of silicon is used in a number of applications, but it is particularly valuable in those for which the lattice-defined sidewall angle can be beneficial to the functional goals. A relatively small but important niche applicat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::22b68a97d0745d4d2e4d7791e3c2081b
https://doi.org/10.1117/1.jmm.15.1.014503

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A new critical dimension metrology for chrome-on-glass substrates based on s-parameter measurements extracted from coplanar waveguide test structures

Autor: Mona Zaghloul, Christine E. Murabito, Chidubem A. Nwokoye, Richard A. Allen, Michael W. Cresswell

Publikováno v: SPIE Proceedings.

The technical objective of the work reported here is to assess whether radio-frequency (RF) measurements made on coplanar waveguide (CPW) test structures, which are replicated in conducting material on insulating substrates, could be employed to extr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::da5bf54c0050eb1d0b2025b19e6a8904
https://doi.org/10.1117/12.686706

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Extraction of critical dimension reference feature CDs from new test structure using HRTEM imaging

Autor: William F. Guthrie, Brandon Park, R.A. Allen, A. Hunt, Michael W. Cresswell, Christine E. Murabito

Publikováno v: Proceedings of the 2005 International Conference on Microelectronic Test Structures, 2005. ICMTS 2005..

The National Institute of Standards and Technology (NIST) is completing a project to provide the semiconductor industry with critical dimension CD reference materials, using the silicon (111) lattice spacing as a reference to establish the linewidth.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::656b3e16510471f7a4ad935cbf67f2c6
https://doi.org/10.1109/icmts.2005.1452203

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Comparison of SEM and HRTEM CD measurements extracted from test-structures having feature linewidths from 40 nm to 240 nm

Autor: W.M. Tan, R.A. Allen, Ronald G. Dixson, Brandon Park, Christine E. Murabito, Michael W. Cresswell, William F. Guthrie

Publikováno v: Proceedings of the 2005 International Conference on Microelectronic Test Structures, 2005. ICMTS 2005..

CD (critical dimension) measurements have been extracted from SEM (scanning electron microscope) and HRTEM (high resolution transmission electron microscopy) images of the same set of monocrystalline silicon features having linewidths between 40 and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a85abdbef60f5b0464e069b54e8ddee9
https://doi.org/10.1109/icmts.2005.1452204

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CD reference features with sub-five nanometer uncertainty

Autor: A. Hunt, R.A. Allen, Christine E. Murabito, Ronald G. Dixson, Brandon Park, J. V. Martinez de Pinillos, William F. Guthrie, Michael W. Cresswell

Publikováno v: SPIE Proceedings.

The implementation of a new test structure for HRTEM (High-Resolution Transmission Electron Microscopy) imaging, and the use of CD AFM (CD Atomic Force Microscopy) to serve as the transfer metrology, have resulted in reductions in the uncertainties a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d79f113941d5453dda57d032ed81c1dd
https://doi.org/10.1117/12.606807

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Recent developments in producing test-structures for use as critical dimension reference materials

Autor: Michael W. Cresswell, Brandon Park, R. Patel, R.A. Allen, M.D. Edelstein, Loren W. Linholm, Christine E. Murabito

Publikováno v: Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516).

NIST is developing Single-Crystal Critical-Dimension Reference Materials (SCCDRM) which address the need of the semiconductor and semiconductor equipment industries for a well-characterized artifact to serve as the basis for comparing the performance

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2d86a4795bebb4159465870bbb892fc0
https://doi.org/10.1109/icmts.2004.1309297

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