Zobrazeno 1 - 10
of 85
pro vyhledávání: '"Christine C. Mitchell"'
Publikováno v:
Journal of Crystal Growth. 287:566-571
Growth rates for organometallic vapor-phase epitaxy of GaN and AlGaN were measured over a wide range of reactor conditions. Non-ideality in growth rates and alloy composition are clear indications of parasitic chemical reactions. These parasitic reac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81bb563ff560d07f8b65b6430147fc74
https://doi.org/10.1016/j.jcrysgro.2005.10.077
https://doi.org/10.1016/j.jcrysgro.2005.10.077
Publikováno v:
Journal of Crystal Growth. 287:572-576
We developed a pyrometer that operates near the high-temperature bandgap of GaN, thus solving the transparency problem once a ∼1 μm thick GaN epilayer has been established. The system collects radiation in the near-UV (380–415 nm) and has an eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55fdc399e89ea6b28c99f43b5a176afa
https://doi.org/10.1016/j.jcrysgro.2005.10.078
https://doi.org/10.1016/j.jcrysgro.2005.10.078
Autor:
Daniel D. Koleske, Karen Charlene Cross, Christine C. Mitchell, Michael E. Coltrin, A. A. Allerman
Publikováno v:
Journal of Crystal Growth. 273:86-99
Optical reflectance and atomic force microscopy (AFM) are used to develop a detailed description of GaN nucleation layer (NL) evolution upon annealing in ammonia and hydrogen to 1050 °C. For the experiments, the GaN NLs were grown to a thickness of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2455e559ab4f70b22b211fbbedffc41e
https://doi.org/10.1016/j.jcrysgro.2004.08.126
https://doi.org/10.1016/j.jcrysgro.2004.08.126
Publikováno v:
Journal of Crystal Growth. 261:30-37
In the epitaxial lateral overgrowth of GaN, mass transport and the effects of crystal-growth kinetics lead to a wide range of observed feature growth rates depending on the dimensions of the masked and exposed regions. Based on a simple model, scalin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4ce3d7d12e8601dc15a1b59546b1e45
https://doi.org/10.1016/j.jcrysgro.2003.09.016
https://doi.org/10.1016/j.jcrysgro.2003.09.016
Publikováno v:
Journal of Crystal Growth. 254:35-45
The interplay between transport and kinetics in selective-area growth (SAG) of compound semiconductors is discussed. A thin-film model describing transport of reactants across the boundary layer above the growth surface is developed. A dimensionless
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d06dd7428b4dc419c9c1744d9a28a7c
https://doi.org/10.1016/s0022-0248(03)01165-5
https://doi.org/10.1016/s0022-0248(03)01165-5
Publikováno v:
Journal of Crystal Growth. 222:144-153
We have investigated lateral transport mechanisms in epitaxial lateral overgrowth (ELO) of GaN grown by Metal organic chemical vapor deposition (MOCVD). Portions of a pre-grown GaN buffer layer are patterned with a dielectric mask material, silicon n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::763ecafb8657d7109efc9972d3ef76c2
https://doi.org/10.1016/s0022-0248(00)00874-5
https://doi.org/10.1016/s0022-0248(00)00874-5
Autor:
Daniel D. Koleske, Christine C. Mitchell, David M. Follstaedt, Karen Charlene Cross, Nancy A. Missert
Publikováno v:
Applied Physics Letters. 83:4797-4799
We demonstrate that when vertical threading dislocations in (0001) GaN are imaged in plan-view by transmission electron microscopy, a surface-relaxation contrast operates in addition to that due to the strain fields of dislocations passing through th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60016672fd0d2f67ddc2e28cc51abe1d
https://doi.org/10.1063/1.1632540
https://doi.org/10.1063/1.1632540
Autor:
Nancy A. Missert, Christine C. Mitchell, Carol I. H. Ashby, Paula P. Provencio, David M. Follstaedt, A. A. Allerman, Daniel D. Koleske
Publikováno v:
Applied Physics Letters. 81:2758-2760
A 40-fold reduction in density of vertical threading dislocations (VTDs) at the surface of GaN is obtained with cantilever epitaxy by using narrow (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae3ad13ffbf05550318fa37eed47b511
https://doi.org/10.1063/1.1511286
https://doi.org/10.1063/1.1511286
Autor:
Karen Charlene Cross, K. W. Fullmer, Andrew A. Allerman, Arthur J. Fischer, Christine C. Mitchell, Daniel D. Koleske, Jeffrey J. Figiel, Steven R. Kurtz, William G. Breiland
Publikováno v:
Applied Physics Letters. 81:1940-1942
Ultraviolet light emitting diodes (LEDs) have been grown using metalorganic vapor phase epitaxy, while monitoring the 550 nm reflected light intensity. During nucleation of GaN on sapphire, the transition from three-dimensional (3D) grain growth to t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6bc761ac76f746297151ec4ec11e898
https://doi.org/10.1063/1.1506793
https://doi.org/10.1063/1.1506793
Autor:
David M. Follstaedt, Leonardo Griego, Carol I. H. Ashby, Gregory M. Peake, Jung Han, Nancy A. Missert, Paula P. Provencio, Christine C. Mitchell
Publikováno v:
Applied Physics Letters. 77:3233-3235
The density of threading dislocations (TD) in GaN grown directly on flat sapphire substrates is typically greater than 10{sup 9}/cm{sup 2}. Such high dislocation densities degrade both the electronic and photonic properties of the material. The densi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8f1df91f4f8ad623e4d970b209b83c0
https://doi.org/10.1063/1.1325394
https://doi.org/10.1063/1.1325394