Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Christina Turley"'
Publikováno v:
Energies, Vol 13, Iss 20, p 5396 (2020)
Occupancy-aware heating, ventilation, and air conditioning (HVAC) control offers the opportunity to reduce energy use without sacrificing thermal comfort. Residential HVAC systems often use manually-adjusted or constant setpoint temperatures, which h
Externí odkaz:
https://doaj.org/article/80c7aa845ef64b00b37a7bc0a14f5eaa
Publikováno v:
Energies, Vol 13, Iss 5396, p 5396 (2020)
Energies; Volume 13; Issue 20; Pages: 5396
Energies; Volume 13; Issue 20; Pages: 5396
Occupancy-aware heating, ventilation, and air conditioning (HVAC) control offers the opportunity to reduce energy use without sacrificing thermal comfort. Residential HVAC systems often use manually-adjusted or constant setpoint temperatures, which h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c343bde9c32990529360c0158dcd73eb
https://www.mdpi.com/1996-1073/13/20/5396
https://www.mdpi.com/1996-1073/13/20/5396
Autor:
Toshiro Itani, Patrick P. Naulleau, Kurt G. Ronse, Christina Turley, Jed H. Rankin, Thomas J. Dunn, Xuemei Chen, Christopher Lee, Katherine Ballman, Paolo A. Gargini
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2017.
High volume manufacturing with extreme ultraviolet (EUV) lithography requires mask induced overlay errors of less than 1.5nm for the N7 node. The use of electrostatic chucking and reflective optics causes the reticle backside flatness and reticle thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e03b5afabc931201e18e588c3c9be7c
https://doi.org/10.1117/12.2280464
https://doi.org/10.1117/12.2280464
Publikováno v:
SPIE Proceedings.
Wafer overlay errors due to EUV mask non-flatness and thickness variations need to be minimized for the successful deployment of EUV lithography at N7 HVM. In this paper, we provide an updated assessment of the overlay impacts from EUV mask blanks as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32b4cfcd4952900b664e69604c7a531a
https://doi.org/10.1117/12.2258642
https://doi.org/10.1117/12.2258642
Take a byte out of MEEF: VAMPIRE: Vehicle for Advanced Mask Pattern Inspection Readiness Evaluations
Autor:
Karen D. Badger, Kazunori Seki, Jed H. Rankin, Daniel J. Dechene, Hesham Abdelghany, Christina Turley
Publikováno v:
SPIE Proceedings.
MEEF, or Mask Error Enhancement Factor, is simply defined as the ratio of the change in printed wafer feature width to the change in mask feature width scaled to wafer level. It is important in chip manufacturing that leads to the amplification of ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baed1be9dc1b489dd9e1a57d8f4e9416
https://doi.org/10.1117/12.2243642
https://doi.org/10.1117/12.2243642
Autor:
Jack Jau, Daniel Corliss, Hung-Yu Tien, Karen D. Badger, Luciana Meli, Jed H. Rankin, Ravi K. Bonam, Fei Wang, Chris Lei, Christina Turley, Wei Fang, Scott Halle, Xiaoxia Huang, Zhenqing John Qi, Acer Chou, Ivy Wu, Chiyan Kuan
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII.
Over the past few years numerous advancements in EUV Lithography have proven its feasibility of insertion into High Volume Manufacturing (HVM).1, 2 A lot of progress is made in the area of pellicle development but a commercially solution with related
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82d1f59408b30891254dd91f12b6c5b5
https://doi.org/10.1117/12.2219601
https://doi.org/10.1117/12.2219601
Autor:
Jed H. Rankin, Christina Turley, Scott Halle, Zhengqing John Qi, Eisuke Narita, Ravi K. Bonam, Mark Lawliss, Kazunori Seki, Karen D. Badger
Publikováno v:
SPIE Proceedings.
As Extreme Ultraviolet (EUV) lithography has matured, numerous imposing technical challenges have been the focus of intense scrutiny, including the EUV radiation source, reflective optics, and fundamental mask fabrication. There has been a lurking qu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4778d5bcd327c1f58cb4e8b31ed65f03
https://doi.org/10.1117/12.2197476
https://doi.org/10.1117/12.2197476
Autor:
Ravi K. Bonam, Masayuki Kagawa, Takeshi Isogawa, Kevin W. Collins, Mark Lawliss, Lin Cheong, Jed H. Rankin, Eisuke Narita, Richard Poro, Luke Bolton, Louis Kindt, Christina Turley
Publikováno v:
Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII.
The backside of photomasks have been largely ignored during the last several decades of development, with the exception of avoiding gross damage or defects, as almost all problems are far enough out of the focal plane to have minimal effect on imagin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7668026b297ead3a0c08413b3180d566
https://doi.org/10.1117/12.2197383
https://doi.org/10.1117/12.2197383
Autor:
Daniel Corliss, Jed H. Rankin, Lin Lee Cheong, Christopher F. Robinson, Dusty Leonhard, Louis Kindt, Christina Turley, John Boyle
Publikováno v:
SPIE Proceedings.
The cleaning requirements for EUV masks are more complex than optical masks due to the absence of available EUVcompatible pellicles. EUV masks must therefore be capable of undergoing more than 100 cleaning cycles with minimum impact to lithographic p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9961bc41a6ff1faeb721e94040fe4695
https://doi.org/10.1117/12.2085913
https://doi.org/10.1117/12.2085913
Autor:
Ravi K. Bonam, Masayuki Kagawa, Steven C. Nash, Yoshifumi Sakamoto, Jonathan Grohs, Eisuke Narita, Emily Gallagher, Louis Kindt, Christina Turley
Publikováno v:
SPIE Proceedings.
The black border is a frame created by removing all the multilayers on the EUV mask in the region around the chip. It is created to prevent exposure of adjacent fields when printing an EUV mask on a wafer. Papers have documented its effectiveness. As
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2cf043febd1f70b8711232f75fe3310
https://doi.org/10.1117/12.2070047
https://doi.org/10.1117/12.2070047