Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Christina Seidleck"'
Autor:
Scott D. Stansberry, Kenneth A. LaBel, Christina Seidleck, Megan C. Casey, J. A. Maharrey, Dante Gamboa, Jonathan A. Pellish
Publikováno v:
IEEE Transactions on Nuclear Science. 68:402-409
We are presenting single-event effect testing results on a 22-nm fully depleted silicon-on-insulator test chip from GlobalFoundries. The 128-Mb static random access memory (SRAMs) were irradiated with heavy ions, and the results are compared to previ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9ab5d86b542898c2eb009de48cc90e6
https://doi.org/10.1109/tns.2021.3060365
https://doi.org/10.1109/tns.2021.3060365
Autor:
Hak Kim, Raymond L. Ladbury, Edward P. Wilcox, Dakai Chen, Anthony M. Phan, Christina Seidleck, Kenneth A. LaBel
Publikováno v:
IEEE Transactions on Nuclear Science. 65:19-26
We evaluated the effects of heavy ion and proton irradiation for a 3-D NAND flash. The 3-D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of identical density in the multiple-level cell (MLC) storage mode. The 3-D NAND show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fef4ba79bb4f65987b19ff1dbf44faf5
https://doi.org/10.1109/tns.2017.2764852
https://doi.org/10.1109/tns.2017.2764852
Autor:
Raymond L. Ladbury, Christina Seidleck, Kenneth A. LaBel, Edward P. Wilcox, Dakai Chen, Anthony M. Phan, Hak Kim
Publikováno v:
IEEE Transactions on Nuclear Science. 64:332-337
We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found that the single-event upset (SEU) cross section varied inversely with cumulative fluence. We attribute the effect to the variable upset sensitiviti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec66ed4d336d96724ddd686984f31874
https://doi.org/10.1109/tns.2016.2615719
https://doi.org/10.1109/tns.2016.2615719
Autor:
Hak Kim, Christina Seidleck, Melanie D. Berg, Edward P. Wilcox, Kenneth A. LaBel, Dakai Chen, Anthony M. Phan, Marco A. Figueiredo
Publikováno v:
IEEE Transactions on Nuclear Science. 62:2703-2708
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7666ec6a72f5d0146419d4b638d28c06
https://doi.org/10.1109/tns.2015.2476475
https://doi.org/10.1109/tns.2015.2476475
Autor:
James R. Schwank, Nathaniel A. Dodds, Anthony M. Phan, Hak Kim, Christina Seidleck, Melanie D. Berg, Michael S. Gordon, C.M. Castaneda, Jonathan A. Pellish, Paul W. Marshall, Kenneth P. Rodbell, Kenneth A. LaBel
Publikováno v:
IEEE Transactions on Nuclear Science. 61:2896-2903
We report low-energy proton and alpha particle SEE data on a 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) static random access memory (SRAM) that demonstrates the criticality of understanding and using low-energy pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d65484a6716cd58c55bc3d3cf98f383a
https://doi.org/10.1109/tns.2014.2369171
https://doi.org/10.1109/tns.2014.2369171
Autor:
Christina Seidleck, Robert A. Weller, Ronald D. Schrimpf, J. K. Wang, N. J. Gaspard, B. Bartz, Cher Xuan Zhang, M. P. King, Melanie D. Berg, A.L. Sternberg, Stephanie L. Weeden-Wright, Xiaowei Deng, D. Reed, Elizabeth Auden, Jonathan A. Pellish, E. Pitta, Marcus H. Mendenhall, Daniel M. Fleetwood, Brian D. Sierawski, Robert A. Reed, Robert Baumann, B. Narasimham, Carl Monzel
Publikováno v:
IEEE Transactions on Nuclear Science. 60:4122-4129
We present experimental evidence of single-event upsets in 28 and 45 nm CMOS SRAMs produced by single energetic electrons. Upsets are observed within 10% of nominal supply voltage for devices built in the 28 nm technology node. Simulation results pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28d5222fb2121081de582a02f2430b0b
https://doi.org/10.1109/tns.2013.2286523
https://doi.org/10.1109/tns.2013.2286523
Autor:
Hyun-Chul Kim, Edward P. Wilcox, Ken LaBel, Melanie D. Berg, Anthony M. Phan, Christina Seidleck, Raymond L. Ladbury
Publikováno v:
IEEE Transactions on Nuclear Science. 60:4457-4463
The speed, tight timing requirements packaging and complicated error behavior of DDR2 and DDR3 SDRAMs pose significant challenges for single-event testing. Often, each new generation will require an expensive new tester with a state-of-the-art contro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::868810b14e0543e6e9266f3cc6d1bb12
https://doi.org/10.1109/tns.2013.2285517
https://doi.org/10.1109/tns.2013.2285517
Publikováno v:
IEEE Transactions on Nuclear Science. 58:2904-2910
We have compared the data retention of irradiated commercial NAND flash memories with that of unirradiated controls. For parts aged by baking at high temperature, there was a statistically significant difference between irradiated samples and unirrad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::415ca292f195fedd7c085a4a4ee5cf0b
https://doi.org/10.1109/tns.2011.2172816
https://doi.org/10.1109/tns.2011.2172816
Autor:
Melanie D. Berg, H.H.K. Tang, Christina Seidleck, David F. Heidel, Anthony M. Phan, M.S. Gordon, Hak Kim, Kevin Stawiasz, Kenneth P. Rodbell, Conal E. Murray, Paul W. Marshall, Jonathan A. Pellish, M. Friendlich, J.R. Schwank, Ken LaBel
Publikováno v:
IEEE Transactions on Nuclear Science. 58:2702-2710
Single event upset (SEU) experimental heavy ion data and modeling results for CMOS, silicon-on-insulator (SOI), 32 nm and 45 nm stacked and DICE latches are presented. Novel data analysis is shown to be important for hardness assurance where Monte Ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa92468a4324c1a3f29ec933807dbe15
https://doi.org/10.1109/tns.2011.2171715
https://doi.org/10.1109/tns.2011.2171715
Autor:
C. Perez, Melanie D. Berg, M. Friendlich, Christina Seidleck, Hak Kim, Raymond L. Ladbury, Ken LaBel
Publikováno v:
IEEE Transactions on Nuclear Science. 58:1015-1022
A novel approach to SEE characterization of counters implemented in a RTAX-S FPGA is presented. Net fan-out, capacitive loading, and operational frequency have demonstrated a direct impact to counter SEU cross sections as compared to shift registers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a5a1b7e2ae4b62cf582e9704f54d98f
https://doi.org/10.1109/tns.2011.2128886
https://doi.org/10.1109/tns.2011.2128886