Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Christina Marie Knoedler"'
Autor:
G.M. Dolny, Osama O. Awadelkarim, Stephen J. Fonash, S.A. Suliman, R.S. Ridley, Christina Marie Knoedler, Jifa Hao
Publikováno v:
Solid-State Electronics. 46:837-845
We report on the results of deep level transient spectroscopy (DLTS) and capacitance–voltage studies made on U-shaped trench-gated n+-polycrystalline Si-oxide–Si capacitors. The two processing steps examined are the reactive ion etching of the tr
Autor:
Osama O. Awadelkarim, Christina Marie Knoedler, G.M. Dolny, S.A. Suliman, Jifa Hao, R.S. Ridley, Stephen J. Fonash
Publikováno v:
Solid-State Electronics. 45:655-661
We report on the effects of channel doping on the performance and hot electron stress (HES) reliability of U-shaped trench gate metal-oxide–silicon field-effect transistors (UMOSFETs). The boron-doped n-channel UMOSFETs are examined using transisto
Autor:
Jifa Hao, G.M. Dolny, R.S. Ridley, Stephen J. Fonash, Christina Marie Knoedler, N. Gollagunta, Osama O. Awadelkarim, S.A. Suliman, Levent Trabzon
Publikováno v:
Semiconductor Science and Technology. 16:447-454
We have examined the impact of trench processing and trench and device cell geometries on the characteristics of a single n-channel U-shaped trench metal-oxide-silicon field-effect transistor (n-UMOSFET) and a device cell comprising several n-UMOSFET
Publikováno v:
Physical Review B. 43:7339-7342
We have fabricated a quantum dot with four leads attached via variable-width constrictions. At high magnetic fields and low temperatures, the h/2${\mathit{e}}^{2}$ and h/4${\mathit{e}}^{2}$ quantized Hall pleateaux observed for wide constrictions are
Autor:
Christina Marie Knoedler
Publikováno v:
Journal of Applied Physics. 68:1129-1137
Nanometer scale features (75–1000 nm) were defined on GaAs/AlGaAs heterostructure surfaces by electron beam patterning. The use of low‐voltage, helium‐ion damage laterally confined the two dimensional electron gas to these patterned areas. Elec
Publikováno v:
Surface Science. 229:298-302
In narrow high-mobility conductors the predominant source of scattering is reflection of carriers off the confining potential. We demonstrate that by changing the geometry of the intersection of the Hall probes with the conductor, the Hall resistance
Autor:
Alan B. Fowler, J. M. Hong, Sean Washburn, J. J. Wainer, Christina Marie Knoedler, Steven E. Laux, C. J. B. Ford
Publikováno v:
Surface Science. 229:307-311
We have fabricated gated, asymmetric rings which, in principle, enable interference between electron waves to be varied with a gate voltage. Although close to the minimum dimensions currently achievable, the results are far from clear-cut, and imply
Autor:
B. Venkataraman, J. Ruzyllo, R. Ridley, T. Grebs, S.A. Suliman, Christina Marie Knoedler, Gary M. Dolny, Osama O. Awadelkarim, C.-T. Wu
Publikováno v:
Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics.
Growth kinetics and reliability of thick gate oxides grown into 2 /spl mu/m deep trenches is investigated. The oxide thickness nonuniformities are observed at the bottom of the trench. It is postulated that thinning of the oxide at the bottom of the
Autor:
N. Gallogunta, C. Kocon, R. Ridley, Osama O. Awadelkarim, S.A. Suliman, Levent Trabzon, Christina Marie Knoedler, G. Dolny, Stephen J. Fonash, J. Zeng, Jianhua Hao, J. Benjamin, T. Grebs, Jerzy Ruzyllo, M. Horn
Publikováno v:
2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).
We report on the performance and reliability of n-channel U-shaped trench-gate metal-oxide-Si field-effect transistors (n-UMOSFETs). Damage induced on the trench sidewalls from the reactive ion etching of the trench is concealed by post-etch cleaning
Publikováno v:
Applied Physics Letters. 56:168-170
We have observed fractional quantization of very few electrons confined in a semiconductor quantum dot using capacitance spectroscopy. The number of electrons per dot varies from 0 to about 40 as a function of bias on the quantum capacitors. The capa