Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Christina Deverich"'
Publikováno v:
SPIE Proceedings.
Excessive dark loss has been observed along the edge nearest the lid of aged chemically amplified resist blanks, which was traced to organic acid contamination evolving from the acrylic plastic lid of the shipping box. Thermal Gravimetric Analysis (T
Publikováno v:
SPIE Proceedings.
Resist heating has been known to be one of the main contributors to local CD variation in mask patterning using variable shape e-beam tools. Increasingly complex mask patterns require increased number of shapes which drives the need for higher electr
Autor:
Robert Lang, Wayne M. Moreau, David R. Medeiros, Christina Deverich, Arpan P. Mahorowala, Wenjie Li, Wei He, Marie Angelopoulos, Karen Petrillo, Paul A. Rabidoux, Chester Huang, Wu-Song Huang
Publikováno v:
SPIE Proceedings.
The mask fabrication industry is slowly migrating to chemically amplified (CA) resists to take the advantages of their high contrast, resolution, and sensitivity. During this migration process, the industry has encountered several problems associated
Autor:
Marie Angelopoulos, David R. Medeiros, Dario L. Goldfarb, Thomas J. Cardinali, Christina Deverich, J.J. Bucchignano, Wu-Song Huang, Wayne M. Moreau, Karen Petrillo, Chester Huang, Robert Lang
Publikováno v:
SPIE Proceedings.
KRS-XE, a high performance chemically amplified photoresist designed specifically for e-beam mask making applications, has been enhanced to achieve reduced “footing” on chrome oxide surfaces while still maintaining the original lithographic chara
Autor:
Paul A. Rabidoux, William A. Aaskov, Karen Petrillo, Christina Deverich, Peter Levin, Wu-Song Huang, Wayne M. Moreau, Andrew J. Watts, David Madeiros, Thomas J. Cardinali, Marie Angelopoulos
Publikováno v:
SPIE Proceedings.
KRS-XE is a chemically amplified resist developed to enable electron-beam lithography for mask making at the 100nm node. This material has been shown to provide an excellent process window for mask manufacturing at this node. Characterization of this
Autor:
Karen Petrillo, David R. Medeiros, Barbara Bates Peck, Wu-Song Huang, Christina Deverich, Brian Ashe, Marie Angelopoulos, Wayne M. Moreau, Paul A. Rabidoux
Publikováno v:
21st Annual BACUS Symposium on Photomask Technology.
The traditional mask making process uses chain scission-type resists such as PBS, poly(butene-1-sulfone), and ZEP, poly(methyl a-chloroacrylate-co-a-methylstyrene) for making masks with dimensions greater than 180nm. PBS resist requires a wet etch pr