Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Christiane Legrand"'
Autor:
S.F. Yoon, Malek Zegaoui, Christiane Legrand, J. Chazelas, N Saadsaoud, Kian Hua Tan, D Decoster, Wan Khai Loke, Zhilin Xu, Satrio Wicaksono
Publikováno v:
IEEE Electron Device Letters. 31:704-706
The authors report the demonstration of high-speed GaNAsSb/GaAs p-i -n waveguide photodetector grown by molecular beam epitaxy technique. A 0.4- m-thick GaNAsSb core layer with 3.3% of N and 8% of Sb for detection wavelength over 1.3 m is sandwiched
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05b7c43895f5033ae00929095d652f08
https://doi.org/10.1109/led.2010.2049563
https://doi.org/10.1109/led.2010.2049563
Autor:
Satrio Wicaksono, Kian Hua Tan, D Decoster, J. Chazelas, Malek Zegaoui, Christiane Legrand, Zhilin Xu, S.F. Yoon, Wan Khai Loke, N Saadsaoud
Publikováno v:
IEEE Electron Device Letters
IEEE Electron Device Letters, 2010, 31 (5), pp.449-451. ⟨10.1109/LED.2010.2041742⟩
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2010, 31, pp.449-451. ⟨10.1109/LED.2010.2041742⟩
IEEE Electron Device Letters, 2010, 31 (5), pp.449-451. ⟨10.1109/LED.2010.2041742⟩
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2010, 31, pp.449-451. ⟨10.1109/LED.2010.2041742⟩
We present the dc performance of a high-quantum-efficiency GaNAsSb/GaAs p-i-n waveguide photodetector. GaNAsSb with N and Sb contents of 3.3% and 8%, respectively, is sandwiched by AlGaAs/GaAs cladding layers. Two types of device epilayer structures,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::62db4a2d6f71fc932473fce9a0c59ec9
https://doi.org/10.1109/led.2010.2041742
https://doi.org/10.1109/led.2010.2041742
Autor:
Eric Cattan, Alexandre Khaldi, Cédric Plesse, Caroline Soyer, Frédéric Vidal, Dominique Teyssié, Christiane Legrand
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2011, 98, pp.164101-1-3. ⟨10.1063/1.3581893⟩
Applied Physics Letters, American Institute of Physics, 2011, 98 (16), pp.164101. ⟨10.1063/1.3581893⟩
Applied Physics Letters, 2011, 98 (16), pp.164101. ⟨10.1063/1.3581893⟩
Applied Physics Letters, American Institute of Physics, 2011, 98, pp.164101-1-3. ⟨10.1063/1.3581893⟩
Applied Physics Letters, American Institute of Physics, 2011, 98 (16), pp.164101. ⟨10.1063/1.3581893⟩
Applied Physics Letters, 2011, 98 (16), pp.164101. ⟨10.1063/1.3581893⟩
International audience; Interpenetrating polymer networks can become successful actuators in the field of microsystems providing they are compatible with microtechnologies. In this letter, we report on a material synthesized from poly(3,4-ethylenedio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e033b3445fe69aff51835a7a58dd545f
https://hal.archives-ouvertes.fr/hal-00591342
https://hal.archives-ouvertes.fr/hal-00591342
Publikováno v:
Molecular Brain Research. 18:77-86
Transcripts from the alpha-, beta- and delta-tropomyosin genes were studied during development of pure cultures of rat neurons, astrocytes and oligodendrocytes. The three cell types contained five alpha-tropomyosin messengers, produced using both alt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::50a8e5ce97e93e96e4b09c5f2109855d
https://doi.org/10.1016/0169-328x(93)90175-o
https://doi.org/10.1016/0169-328x(93)90175-o
Autor:
Marc François, Jean-Pierre Vilcot, M. Beaugeois, Christiane Legrand, Marie Lesecq, S. Maricot
Publikováno v:
Optics Letters
Optics Letters, Optical Society of America-OSA Publishing, 2009, 34, pp.1936-1938. ⟨10.1364/OL.34.001936⟩
Optics Letters, 2009, 34, pp.1936-1938. ⟨10.1364/OL.34.001936⟩
Optics Letters, Optical Society of America-OSA Publishing, 2009, 34, pp.1936-1938. ⟨10.1364/OL.34.001936⟩
Optics Letters, 2009, 34, pp.1936-1938. ⟨10.1364/OL.34.001936⟩
We report on the fabrication and characterization of a very compact filtering structure based on a resonant stub fabricated using optical wire technology in the InP material line. The stub length is close to 1.6 microm and has been designed to get a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3551bd21ea83f5d30fc698f61a37dfa8
https://hal.archives-ouvertes.fr/hal-00473045
https://hal.archives-ouvertes.fr/hal-00473045
Autor:
J. Chazelas, Marc François, Didier Decoster, Pascal Tilmant, Malek Zegaoui, N. Choueib, Christiane Legrand
Publikováno v:
Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2009, 86, pp.68-71. ⟨10.1016/j.mee.2008.09.043⟩
Microelectronic Engineering, 2009, 86 (1), pp.68-71. ⟨10.1016/j.mee.2008.09.043⟩
Microelectronic Engineering, Elsevier, 2009, 86, pp.68-71. ⟨10.1016/j.mee.2008.09.043⟩
Microelectronic Engineering, 2009, 86 (1), pp.68-71. ⟨10.1016/j.mee.2008.09.043⟩
This paper reports on an easy and quick planarization and passivation technique of III-V compound semiconductor compatible with nanoscale devices. Vertical etching requires good sidewalls passivation to reduce drastically the leakage current and to o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7bcd0396f2f2a3e83c9bc7b755c959d3
https://hal.archives-ouvertes.fr/hal-00473043
https://hal.archives-ouvertes.fr/hal-00473043
Autor:
M. Franqois, Didier Decoster, Joseph Harari, J. Chazelas, F. Mollot, Christiane Legrand, Malek Zegaoui, A. Leroy
Publikováno v:
2006 International Topical Meeting on Microwave Photonics.
A new InP digital optical switch especially designed for high crosstalk is proposed. More than 72 dB microwave crosstalk can be achieved at 1.55 μm wavelength optical signal for a 56 mA switching current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ba8a5bec25db8dd18880fb4c103f0f2
https://doi.org/10.1109/mwp.2006.346528
https://doi.org/10.1109/mwp.2006.346528
Autor:
Christiane Legrand, Didier Lippens, Sophie Fasquel, X. Melique, Nelly Fabre, M. Muller, Marc François, Olivier Vanbésien
Publikováno v:
Opto-Electronics Review. 14
We report on the numerical simulation and fabrication of a two-dimensional flat lens based on negative refraction in photonic crystals. The slab acting as a lens is made of an hole array (operating at the wavelength of 1.5 μm) etched in a InP/InGaAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c172f50a01206c8ac5e2d8d4ddd18141
https://doi.org/10.2478/s11772-006-0030-0
https://doi.org/10.2478/s11772-006-0030-0
Publikováno v:
Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2005, 77, pp.210-216
Microelectronic Engineering, 2005, 77, pp.210-216
Microelectronic Engineering, Elsevier, 2005, 77, pp.210-216
Microelectronic Engineering, 2005, 77, pp.210-216
Hydrogen SilSesQuioxane is now known for its possibilities as negative tone e-beam resist. Good quality patterning can be obtained with low roughness. We report here the transfer of this pattern to a GaAs layer. Our aim is to fabricate nano-photonic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c392aca267b0450027e838582f4fccf
https://hal.archives-ouvertes.fr/hal-00125656
https://hal.archives-ouvertes.fr/hal-00125656
Autor:
Didier Decoster, M. Constant, Hong Wu Li, A. Beaurain, Samuel Dupont, Joseph Harari, Christiane Legrand, Jean-Pierre Vilcot
Publikováno v:
Microwave and Optical Technology Letters
Microwave and Optical Technology Letters, Wiley, 2004, 40/3, pp.216-218. ⟨10.1002/mop.11333⟩
Microwave Opt. Technol. Lett.
Microwave Opt. Technol. Lett., 2004, 40/3, pp.216-218. ⟨10.1002/mop.11333⟩
Microwave and Optical Technology Letters, 2004, 40 (3), pp.216-218. ⟨10.1002/mop.11333⟩
Microwave and Optical Technology Letters, Wiley, 2004, 40, pp.216-218
Microwave and Optical Technology Letters, Wiley, 2004, 40/3, pp.216-218. ⟨10.1002/mop.11333⟩
Microwave Opt. Technol. Lett.
Microwave Opt. Technol. Lett., 2004, 40/3, pp.216-218. ⟨10.1002/mop.11333⟩
Microwave and Optical Technology Letters, 2004, 40 (3), pp.216-218. ⟨10.1002/mop.11333⟩
Microwave and Optical Technology Letters, Wiley, 2004, 40, pp.216-218
InGaAsP/InP micro-waveguides are fabricated by a deep (>3 μm) Reactive Ion Etching. The devices losses are measured by the Fabry–Perot technique for guide width contained between 10 μm and 0.5 μm. The measured losses range from 2 dB/mm to 14 dB/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd88a22c2404d574edc8ff1d45b241e4
https://hal.archives-ouvertes.fr/hal-00269056
https://hal.archives-ouvertes.fr/hal-00269056