Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Christian Zuniga"'
Autor:
Christian Zuniga
Publikováno v:
Proceedings of the 2022 AERA Annual Meeting.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::938dc2cfa634fc563d936fbb612cdce6
https://doi.org/10.3102/1888573
https://doi.org/10.3102/1888573
Publikováno v:
Optical Microlithography XXXI.
As the technology node for the semiconductor manufacturing approaches advanced nodes, the scattering-bars (SBs) are more crucial than ever to ensure a good on-wafer printability of the line space pattern and hole pattern. The main pattern with small
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4ed793385300c03d953739f22b7b3f7
https://doi.org/10.1117/12.2295451
https://doi.org/10.1117/12.2295451
Autor:
Young-Seok Woo, Xiren Wang, Christian Zuniga, Ana-Maria Armeanu, Nikolay Elistratov, Yuri Granik, Jung-Hwan Choi
Publikováno v:
SPIE Proceedings.
In advanced technological nodes, the photoresist absorbs light, which is reflected by underlying topography during optical lithography of implantation layers. Anti-reflective coating (ARC) helps to suppress the reflections, but ARC removal may damage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2483da7c9be4fc7be069ecda2e5087b
https://doi.org/10.1117/12.2258346
https://doi.org/10.1117/12.2258346
Autor:
Christian Zuniga, Ananthan Raghunathan, Kostas Adam, John L. Sturtevant, Yunfei Deng, Chris A. Mack
Publikováno v:
SPIE Proceedings.
Optical Proximity Correction (OPC) has continually improved in accuracy over the years by adding more physically based models. Here, we further extend OPC modeling by adding the Analytical Linescan Model (ALM) to account for systematic biases in CD-S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9520c3c388808c4f88de7d810545489
https://doi.org/10.1117/12.2218534
https://doi.org/10.1117/12.2218534
Publikováno v:
SPIE Proceedings.
Resist profile shapes become important for 22nm node and beyond as the process window shrinks. Degraded profile shapes for example may induce etching failures. Rigorous resist simulators can simulate a 3D resist profile accurately but they are not fa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::866be3a0386967000afd4abb0c1b13ab
https://doi.org/10.1117/12.2086468
https://doi.org/10.1117/12.2086468
Autor:
Michael Oliver, Christian Zuniga, Kostas Adam, ChangAn Wang, Scott M. Mansfield, John L. Sturtevant, Michael Lam, David Fryer, Chris Clifford
Publikováno v:
SPIE Proceedings.
This paper extends the state of the art by demonstrating performance improvements in the Domain Decomposition Method (DDM) from a physical perturbation of the input mask geometry. Results from four testcases demonstrate that small, direct modificatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7daad105a29b9334e3db86ff513cbb08
https://doi.org/10.1117/12.2046489
https://doi.org/10.1117/12.2046489
Autor:
Christian Zuniga, Yunfei Deng
Publikováno v:
SPIE Proceedings.
As Critical Dimension (CD) sizes decrease for 32 nm node and beyond, resist loss increases and resist patterns become more vulnerable to etching failures. Traditional OPC models only consider 2D contours and neglect height variations. Rigorous resist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbf6c6f3e7b32a574d436bf3bcfb2cc6
https://doi.org/10.1117/12.2048124
https://doi.org/10.1117/12.2048124
Publikováno v:
Ciencias Ambientales, Vol 57, Iss 1 (2022)
[Introducción]: Parte del éxito de los programas de conservación se centra, en la sostenibilidad económica que éstos brindan a las personas propietarias de los bosques, dentro de una matriz de paisaje productivo cada vez más agresiva. Sin embar
Externí odkaz:
https://doaj.org/article/e1e26be8bac843178ff93d2dc598ef95
Autor:
Kostas Adam, Michael Lam, Christian Zuniga, Michael Oliver, Haiqing Wei, Chris Clifford, David Fryer
Publikováno v:
SPIE Proceedings.
The Domain Decomposition Method (DDM) for approximating the impact of 3DEMF effects was introduced nearly ten years ago as an approach to deliver good accuracy for rapid simulation of full-chip applications. This approximation, which treats mask edge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4c70ee9d4f6272160d00c9889f3d50e
https://doi.org/10.1117/12.2013167
https://doi.org/10.1117/12.2013167
Autor:
Christian Zuniga, Konstantinos Adam, James Word, Eric Hendrickx, Michael Lam, Geert Vandenberghe, Vicky Philipsen, Bruce W. Smith, Julien Mailfert
Publikováno v:
SPIE Proceedings.
In this work, 3D mask modeling capabilities of Calibre will be used to assess mask topography impact on EUV imaging. The EUV mask absorber height and the non-telecentric illumination at mask level, modulate the captured intensity from the shadowed ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9bf80c4c7a35783727e65fa656407f0
https://doi.org/10.1117/12.918267
https://doi.org/10.1117/12.918267