Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Christian Trassy"'
Publikováno v:
High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes). 14:211-221
Publikováno v:
Progress in Photovoltaics: Research and Applications. 17:297-305
n-Type silicon wafers present some definite advantages for the photovoltaic industry, mainly due to the low capture cross sections of minority carriers for most metallic impurities. This peculiarity is beneficial for multicrystalline silicon (mc-Si)
Publikováno v:
Combustion Science and Technology. 175:759-774
An inductively coupled plasma spectrometer was used with a laboratory fluidized-bed reactor and adapted to continuously measure the heavy metal concentrations in exhaust gases. The system is devoted to the thermal treatment of metal-spiked model wast
Autor:
Christian Trassy
Publikováno v:
Reflets de la physique. :13-15
L’industrie photovoltaique connait depuis une dizaine d’annees une croissance extremement forte, fondee essentiellement sur le silicium cristallin. Cette croissance est aujourd’hui limitee par la disponibilite de silicium de qualite solaire. Ce
Publikováno v:
High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes). 1:461-472
Publikováno v:
High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes). 1:449-460
Publikováno v:
High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes). 1:421-432
Autor:
Christian Trassy, Remi Monna, Santo Martinuzzi, Claude Lévy-Clément, Nam Le Quang, Isabelle Périchaud, Mustapha Lemiti, Abdelillah Slaoui, J. Kraiem, Jean-Paul Kleider, Sébastien Dubois, Yves Veschetti
Publikováno v:
Solar Energy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1190c47293d4001d3cc3320c287540df
https://hal.archives-ouvertes.fr/hal-00835663
https://hal.archives-ouvertes.fr/hal-00835663
Autor:
B. Bournonville, J. Degoulange, Dominique Pelletier, G. Chichignoud, Yves Delannoy, Christian Trassy
Publikováno v:
High Temp. Mater. Process
High Temp. Mater. Process, 2009, 13 (3-4), pp.315-624
Scopus-Elsevier
High Temp. Mater. Process, 2009, 13 (3-4), pp.315-624
Scopus-Elsevier
International audience; The effect of the reactant gas injection mode into inductively coupled plasma has been investigated, through the volatilization reaction of a graphite target submitted to argon-oxygen plasma. A graphite disk is positioned at d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d2ceacb64da135b26ac44bd3c94e81f
https://hal.archives-ouvertes.fr/hal-00489907
https://hal.archives-ouvertes.fr/hal-00489907
Publikováno v:
2008 33rd IEEE Photovolatic Specialists Conference.
N-type silicon wafers present some definite advantages for photovoltaics, mainly due to the low capture cross sections of minority carriers for most metallic impurities. This peculiarity is beneficial for multicrystalline silicon (mc-Si) wafers. Most