Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Christian Schlunder"'
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Autor:
Wolfgang Gustin, Christian Schlunder, Katja Puschkarsky, Tibor Grasser, Hans Reisinger, G. Rott
Publikováno v:
IEEE Transactions on Electron Devices. 66:4623-4630
Despite considerable research efforts, efficient and accurate analog bias temperature instability (BTI) stress and recovery models are still urgently needed to evaluate aging in circuit simulators. We present a model for arbitrary analog BTI stress b
Publikováno v:
IEEE Transactions on Electron Devices. 65:4764-4771
To enable MOSFETs lifetime extrapolation of up to 10 years, bias temperature instability (BTI) is commonly accelerated via increased stress voltage and increased temperature. We demonstrate that BTI can be described by a unique activation energy map
Publikováno v:
Microelectronics Reliability. 82:1-10
For more than 10 years a major part of MOSFET reliability publications are dealing with (N)BTI. The degradation and recovery mechanism is still not fully understood (Grasser, 2014). New publications demonstrate incessantly the agile debate on this im
Autor:
Katja Waschneck, Peter Rotter, Christian Schlunder, Franz Ungar, Hans Reisinger, Georg Georgakos, Susanne Lachenmann
Publikováno v:
IRPS
For modern semiconductor product design, reliability aspects have to be considered not only for technology process development but inevitable also during circuit design phase. Electronic design automation tools (EDA) have to support circuit designers
Autor:
Andreas Martin, Christian Schlunder, Hans Reisinger, Fabian Proebster, Jörg Berthold, Wolfgang Gustin
Publikováno v:
Microelectronics Reliability. 64:179-184
BTI parameter degradation of MOSFETs shows a statistical variation. The distribution of the threshold voltage V th after NBTI stress originates from a convolution of the distribution of the virgin devices together with the additional distribution of
Publikováno v:
ESSDERC
Accelerating Bias Temperature Instability (BTl) through temperature activated charge trapping and chemical reactions is commonly used during qualification measurements of MOSFETs to enable lifetime extrapolation of typically up to ten years. Capture
Autor:
Katja Puschkarsky, Christian Schlunder, Georg Georgakos, Fabian Proebster, Hans Reisinger, Jörg Berthold, Wolfgang Gustin
Publikováno v:
2017 IEEE International Reliability Physics Symposium (IRPS).
Hot carrier induced degradation of MOSFETs is still a concern for circuit reliability and not yet fully understood [1-4]. On the one hand stress measurements at single devices reveal critical parameter degradation for modern technologies especially a
Autor:
Fabian Proebster, Hans Reisinger, Andreas Martin, Wolfgang Gustin, Christian Schlunder, Jörg Berthold
Publikováno v:
2017 IEEE International Reliability Physics Symposium (IRPS).
BTI parameter degradation of MOSFETs shows a statistical variation. The distribution of the threshold voltage Vth after NBTI stress originates from a convolution of the distribution of the virgin devices together with the additional distribution of t